摘要:
A connector unit which is capable of suppressing lowering of a clicking feeling, even if the fitting and removing of connectors to and from each other is repeated. A spring portion that receives a contact portion of each of plug contacts of a plug connector when a receptacle connector and the plug connector are fitted to each other is formed on each of receptacle contacts of the receptacle connector. A protrusion is formed on the contact portion of each plug contact. The spring portion is formed to have an auxiliary contact portion that is urged by the protrusion when both of the connectors are fitted to each other, and a recess that receives the protrusion when the both of the connectors are fitted to each other.
摘要:
A connector unit which is capable of suppressing lowering of a clicking feeling, even if the fitting and removing of connectors to and from each other is repeated. A spring portion that receives a contact portion of each of plug contacts of a plug connector when a receptacle connector and the plug connector are fitted to each other is formed on each of receptacle contacts of the receptacle connector. A protrusion is formed on the contact portion of each plug contact. The spring portion is formed to have an auxiliary contact portion that is urged by the protrusion when both of the connectors are fitted to each other, and a recess that receives the protrusion when the both of the connectors are fitted to each other.
摘要:
In a vehicle seat (car seat 1) including a first seat portion (seat cushion 10) movable between a use position and a retracted position, and a second seat portion (seat back 20) movable between a use position and a retracted position, an actuator mechanism is configured to cause the second seat portion to start moving toward its retracted position at a time when the first seat portion passes a predetermined intermediate position that is on a way from the use position toward the retracted position. In one embodiment, the actuator mechanism includes a biasing member (torsion spring 13, 23) configured to bias each of the seat cushion 10 and the seat back 20 from the use position toward the retracted position, a lock member (lock arm 42) configured to lock the seat back 20 in the use position, and an unlock device (cable 44, 42A) configured to release the lock member to cause the seat back 20 to start moving toward the retracted position, at a time when the seat cushion 10 passes the predetermined intermediate position that is on the way from a posture in which the seat cushion is ready for use toward a posture in which the seat cushion 10 is tipped up.
摘要:
An inkjet printing apparatus comprises an ink tank including an ink accommodating unit, an ink leading-out mechanism for leading out the ink in the ink accommodating unit to an outside, and a housing, and an ink tank holder for removably retaining the ink tank, wherein a space is formed between the ink leading-out mechanism and the housing, and when the ink tank is mounted to the ink tank holder, an ink flow passage is formed by contact of an outer periphery of an ink leading-out needle in the ink tank holder with a sealing member in the ink leading-out mechanism, further comprising restriction means for restricting a position of the ink tank to the ink tank holder such that when removing the ink tank from the ink tank holder, the ink tank stops in a state where a tip end of the ink leading-out needle is in the space.
摘要:
A method of depositing a high quality low defect single crystalline Group III-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group III-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group III-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要:
Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要:
Disclosed is an operation panel including: an operating unit to receive an operation from a user; a detecting unit to detect whether the operation panel is attached to a predetermined device; a communication unit to be wirelessly communicable with the predetermined device; and a control unit to switch a function of the predetermined device, which can be operated from the operating unit, so that the operation relating to a first function of the predetermined device can be carried out from the operating unit and the operation relating to a second function of the predetermined device cannot be carried out from the operating unit when the operation panel is not attached to the predetermined device, and so that at least the operation relating to the second function can be carried out from the operating unit when the operation panel is attached to the predetermined device.
摘要:
Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.