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公开(公告)号：US20050110032A1
公开(公告)日：2005-05-26
申请号：US10904622
申请日：2004-11-19
CPC分类号： H01L33/505 , G02B6/0046 , H01L33/46 , H01L2224/48091 , H01L2924/00014
摘要： A light-emitting diode (1) is furnished with a semiconductor laminate (6), optically reflective layers (17) and (19), an optically reflective film (25), and a phosphorescent plate (27). The laminate (6) is formed by an n-type cladding layer (9), an active layer (11), a p-type cladding layer (13), and a p-type contact layer (15), laminated in order onto a substrate (7). The optically reflective layers (17) and (19) are provided respectively on the p-type contact layer (15) and on the back side (7b) of the substrate (7). The optically reflective film (25) is provided on three side surfaces of the laminate (6). The phosphorescent plate (27) is mounted on a side face, among the side faces of the laminate (6), on which there is no optically reflective film (25). Blue light (L1) output from the active layer (11) is reflected at each of the optically reflective layers, and is gathered on the side face on which the phosphorescent plate (27) is provided. A portion of the blue light (L1) turns into yellow light (2) in the phosphorescent plate (27), and white light derived from the blue light (L1) and yellow light (L2) is emitted.
摘要翻译： 发光二极管（1）配备有半导体层叠体（6），光反射层（17）和（19），光反射膜（25）和磷光板（27）。 层叠体（6）由n型包覆层（9），有源层（11），p型覆盖层（13）和p型接触层（15）依次层叠而形成 衬底（7）。 光反射层（17）和（19）分别设置在基板（7）的p型接触层（15）和背面（7b）上。 光反射膜（25）设置在层叠体（6）的三个侧面上。 磷光板（27）安装在层叠体（6）的没有光反射膜（25）的侧面中的侧面上。 从有源层（11）输出的蓝光（L 1）在每个光反射层被反射，聚集在设置有磷光板（27）的侧面上。 蓝色光（L 1）的一部分在磷光板（27）中变成黄色光（2），发出蓝色光（L 1）和黄色光（L 2）衍生的白色光。
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公开(公告)号：US07476909B2
公开(公告)日：2009-01-13
申请号：US11311638
申请日：2005-12-20
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，从氮化物半导体衬底观察的位于比n型Al x Ga 1-x N层更远的p型Al x Ga 1-x N层，以及位于n型Al x Ga 1-x N层之间的量子阱 -xN层和p型Al x Ga 1-x N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的侧面朝下地安装，并且从第二主表面1a射出光 与氮化物半导体衬底的第一主表面相对。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。
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公开(公告)号：US20060157717A1
公开(公告)日：2006-07-20
申请号：US11311638
申请日：2005-12-20
IPC分类号： H01L33/00
CPC分类号： H01L33/025 , H01L33/22 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00011 , H01L2924/10155 , H01L2924/10253 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/20752 , H01L2924/2076 , H01L2924/01049 , H01L2924/01004 , H01L2924/01005
摘要： A light emitting device having a simple structure that can be easily manufactured, attaining high light emitting efficiency stably for a long time is obtained, which light emitting device includes: a GaN substrate as a nitride semiconductor substrate and, on a first main surface of the nitride semiconductor substrate, an n-type AlxGa1-xN layer, a p-type AlxGa1-xN layer positioned further than the n-type AlxGa1-xN layer viewed from the nitride semiconductor substrate, and a quantum well positioned between the n-type AlxGa1-xN layer and the p-type AlxGa1-xN layer. In the light emitting device, specific resistance of the nitride semiconductor substrate is at most 0.5 Ω·cm, the side of p-type AlxGa1-xN layer is mounted face-down, and the light is emitted from the second main surface 1a that is opposite to the first main surface of the nitride semiconductor substrate. The second main surface 1a of nitride semiconductor substrate has trenches formed therein.
摘要翻译： 获得具有简单结构的发光器件，其可以容易地制造，长时间稳定地获得高发光效率，该发光器件包括：GaN衬底作为氮化物半导体衬底，并且在第一主表面上 氮化物半导体衬底，n型Al x Ga 1-x N层，p型Al x Ga 1-x N层， x N层比从氮化物半导体衬底观察到的n型Al x Ga 1-x N层更远，并且位于 n型Al x Ga 1-x N层和p型Al x Ga 1-x N层，以及p型Al x Ga 1-x N层， N层。 在发光器件中，氮化物半导体衬底的比电阻为0.5Ω·cm以下，p型Al x Ga 1-x N层的一侧为 并且从与氮化物半导体衬底的第一主表面相对的第二主表面1a发射光。 氮化物半导体衬底的第二主表面1a具有形成在其中的沟槽。
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公开(公告)号：US06618539B2
公开(公告)日：2003-09-09
申请号：US09961191
申请日：2001-09-24
IPC分类号： G02B600
CPC分类号： H01L21/67103 , G02B6/30 , H01L23/345 , H01L2924/0002 , H01L2924/00
摘要： To provide a heater module which can improve the temperature uniformity in an optical waveguide while keeping the power consumption and the thickness of the optical waveguide module. A heater module 20 in accordance with the present invention is a heater module 20 for heating an optical waveguide device 12 so as to regulate its temperature; and comprises a heat-generating circuit 22 adapted to generate heat when energized, and a heat-transmitting section 21 disposed on the upper face of the heat-generating circuit 22 and formed with a recessed groove portion for mounting the optical waveguide device 12. When the optical waveguide device 12 is mounted on the bottom face of the heat-transmitting section 21 formed with the recessed groove section, the optical waveguide device 12 can be heated not only from its bottom face, but also from its side faces by edge parts constituting the recessed groove portion, whereby the temperature uniformity can be enhanced.
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公开(公告)号：US09404082B2
公开(公告)日：2016-08-02
申请号：US13990991
申请日：2011-12-02
CPC分类号： C12N5/0642 , C12N5/0696 , C12N2501/125 , C12N2501/145 , C12N2501/165 , C12N2501/20 , C12N2501/22 , C12N2501/2303 , C12N2501/2305 , C12N2501/2306 , C12N2501/26 , C12N2502/02 , C12N2506/02 , C12N2506/45 , G01N33/5029 , G01N33/5047 , G01N33/505 , G01N2500/04 , G01N2500/10
摘要： The present invention relates to a method for producing human eosinophils from human pluripotent stem cells. More specifically, the present invention provides a method for producing human eosinophils from human pluripotent stem cells, which method comprises the steps of: (1) co-culturing, in the presence of VEGF, human pluripotent stem cells with cells separated from the AGM region of a mammalian fetus; (2) performing suspension culture using a medium comprising IL-3, IL-6, Flt3 ligand, SCF, TPO and serum; (3) performing suspension culture using a medium comprising IL-3, SCF, GM-CSF and serum; and, optionally, (4) performing suspension culture using a medium comprising IL-3, IL-5 and serum.
摘要翻译： 本发明涉及从人多能干细胞生产人嗜酸性粒细胞的方法。 更具体地说，本发明提供从人多能干细胞生产人嗜酸性粒细胞的方法，该方法包括以下步骤：（1）在VEGF的存在下，将人多能干细胞与从AGM区域分离的细胞共培养 的哺乳动物胎儿; （2）使用包含IL-3，IL-6，Flt3配体，SCF，TPO和血清的培养基进行悬浮培养; （3）使用包含IL-3，SCF，GM-CSF和血清的培养基进行悬浮培养; 和（4）使用包含IL-3，IL-5和血清的培养基进行悬浮培养。
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6.发明授权Text/image storage device, image reading device, and image forming apparatus 有权文本/图像存储装置，图像读取装置和图像形成装置公开(公告)号：US07904811B2
公开(公告)日：2011-03-08
申请号：US11220851
申请日：2005-09-08
申请人： Hirohisa Saito
发明人： Hirohisa Saito
IPC分类号： G06N3/00
CPC分类号： H04N1/00204 , H04N2201/0015 , H04N2201/0068 , H04N2201/0094 , H04N2201/33378
摘要： A storage device is disclosed. The storage device includes a text/image information memory unit, a unit that converts the data format of text/image information, a unit that communicates with a user terminal having a display, and a delivery unit configured to, in response to a request for the property of a file stored in the memory unit from the user terminal through the communication unit, show the property of the corresponding file stored in the memory unit on the display of the user terminal. When the user terminal requests a download of the file by selecting a file format applicable to binary image data, the conversion unit converts text/image information contained in the file into binary image data if the data format of the text/image information is not binary image data but is multilevel image data (color image). Then, the delivery unit sends the binary image data in the selected file format to the user terminal.
摘要翻译： 公开了一种存储装置。 存储装置包括文本/图像信息存储单元，转换文本/图像信息的数据格式的单元，与具有显示的用户终端进行通信的单元，以及传送单元，其被配置为响应于请求 通过通信单元从用户终端存储在存储器单元中的文件的属性显示存储在存储器单元中的用户终端的显示器上的对应文件的属性。 当用户终端通过选择适用于二进制图像数据的文件格式来请求下载文件时，如果文本/图像信息的数据格式不是二进制的，则转换单元将包含在文件中的文本/图像信息转换为二进制图像数据 图像数据，但是是多级图像数据（彩色图像）。 然后，发送单元将所选择的文件格式的二进制图像数据发送到用户终端。
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7.发明授权Method of testing for atopic dermatitis by measuring expression of the NOR-1 gene 失效通过测量NOR-1基因表达测定特应性皮炎的方法公开(公告)号：US07115373B2
公开(公告)日：2006-10-03
申请号：US10608863
申请日：2003-06-27
申请人： Ryoichi Hashida , Shinji Kagaya , Yoshihiro Yayoi , Yuji Sugita , Hirohisa Saito
发明人： Ryoichi Hashida , Shinji Kagaya , Yoshihiro Yayoi , Yuji Sugita , Hirohisa Saito
CPC分类号： C12Q1/6883 , A01K67/0275 , A01K2217/05 , A01K2227/105 , A01K2267/0306 , C07K14/705 , C12N15/8509 , C12Q1/6897 , C12Q2600/112 , C12Q2600/136 , C12Q2600/158 , G01N33/6893 , G01N2800/202 , G01N2800/24 , C12Q2545/114 , C12Q2531/113
摘要： Genes whose expression differ between that in eosinophils collected from atopic dermatitis patients of the exabartation stage and those of the remission stage were searched via a differential display method. As a result, NOR-1 (MINOR) gene was successfully identified whose expression significantly increased in eosinophils of patients in the remission stage, a stage associated with a decrease of eosinophils. The present inventors discovered that the gene can be successfully employed in testing for allergic diseases and screening for candidate compounds for therapeutic agents.
摘要翻译： 通过差异显示法搜索表达不同于从分泌阶段的特应性皮炎患者和缓解期的嗜酸性粒细胞中表达不同的基因。 结果，成功鉴定了NOR-1（MINOR）基因，其在缓解期患者的嗜酸性粒细胞中的表达显着增加，这与嗜酸性粒细胞减少有关。 本发明人发现，该基因可以成功地用于过敏性疾病的检测和用于治疗剂的候选化合物的筛选。
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公开(公告)号：US5336081A
公开(公告)日：1994-08-09
申请号：US982694
申请日：1992-11-24
申请人： Hirohisa Saito , Jeremy P. Hoblyn , Etsuo Abe
发明人： Hirohisa Saito , Jeremy P. Hoblyn , Etsuo Abe
CPC分类号： F23J7/00 , F23J15/003
摘要： In a device for removing nitrogen oxides from exhaust gas of a combustion device by spraying a treatment agent capable of chemically reducing nitrogen oxides contained in the exhaust gas from an injector in a combustion chamber or an exhaust passage of the combustion device, the effectiveness of the treatment agent is optimized by detecting a combustion condition of the combustion device, and supplying water and at least one treatment agent in a selective and alternating manner according the detected combustion condition.
摘要翻译： 在通过喷射能够化学还原包含在废气中的氮氧化物的处理剂从燃烧装置的燃烧室或排气通道中的喷射器中除去燃烧装置的废气中的氮氧化物的装置中， 通过检测燃烧装置的燃烧状态，并根据检测到的燃烧条件以选择性和交替的方式供给水和至少一种处理剂来优化处理剂。
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9.发明申请SURFACE-EMITTING LASER ELEMENT, FABRICATION METHOD THEREOF, SURFACE-EMITTING LASER ARRAY, AND FABRICATION METHOD THEREOF 失效表面发射激光元件，其制造方法，表面发射激光阵列及其制造方法公开(公告)号：US20100172390A1
公开(公告)日：2010-07-08
申请号：US12376911
申请日：2007-05-21
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/0206 , H01S5/0215 , H01S5/105 , H01S5/18308 , H01S5/18341 , H01S5/3202 , H01S5/34333 , H01S5/423 , H01S2301/173
摘要： A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.
摘要翻译： 表面发射激光元件的制造方法包括制备包括高位错密度高电导区，低位错密度高电导区和低位错密度低电导区的导电GaN多区衬底作为导电 GaN衬底; 在衬底上形成包括发射层的多个III-V族化合物半导体层堆叠的半导体层堆叠形成步骤; 以及形成半导体侧电极和基板侧电极的电极形成工序。 形成半导体层和电极，使得载流子在发射层中流动的发射区域位于低位错密度高电导区域的跨度之内和之内。 因此，可以以良好的产率获得在发射区域具有均匀发光的表面发射激光元件。
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10.发明申请Text/image storage device, image reading device, and image forming apparatus 有权文本/图像存储装置，图像读取装置和图像形成装置公开(公告)号：US20060055962A1
公开(公告)日：2006-03-16
申请号：US11220851
申请日：2005-09-08
申请人： Hirohisa Saito
发明人： Hirohisa Saito
IPC分类号： G06F3/12
CPC分类号： H04N1/00204 , H04N2201/0015 , H04N2201/0068 , H04N2201/0094 , H04N2201/33378
摘要： A storage device is disclosed. The storage device includes a text/image information memory unit, a unit that converts the data format of text/image information, a unit that communicates with a user terminal having a display, and a delivery unit configured to, in response to a request for the property of a file stored in the memory unit from the user terminal through the communication unit, show the property of the corresponding file stored in the memory unit on the display of the user terminal. When the user terminal requests a download of the file by selecting a file format applicable to binary image data, the conversion unit converts text/image information contained in the file into binary image data if the data format of the text/image information is not binary image data but is multilevel image data (color image). Then, the delivery unit sends the binary image data in the selected file format to the user terminal.
摘要翻译： 公开了一种存储装置。 存储装置包括文本/图像信息存储单元，转换文本/图像信息的数据格式的单元，与具有显示的用户终端进行通信的单元，以及传送单元，其被配置为响应于请求 通过通信单元从用户终端存储在存储器单元中的文件的属性显示存储在存储器单元中的用户终端的显示器上的对应文件的属性。 当用户终端通过选择适用于二进制图像数据的文件格式来请求下载文件时，如果文本/图像信息的数据格式不是二进制的，则转换单元将包含在文件中的文本/图像信息转换为二进制图像数据 图像数据，但是是多级图像数据（彩色图像）。 然后，发送单元将所选择的文件格式的二进制图像数据发送到用户终端。
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