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    Method for forming deposited film by generating precursor with halogenic oxidizing agent
    3.
    发明授权
    Method for forming deposited film by generating precursor with halogenic oxidizing agent 失效
    用卤素氧化剂生成前体形成沉积膜的方法

    公开(公告)号：US4861623A

    公开(公告)日：1989-08-29

    申请号：US942209

    申请日：1986-12-16

    申请人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    发明人： Masao Ueki ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/44 ,  H01L21/205 ,  H01L21/3205

    CPC分类号： H01L21/32053

    摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing silicon and/or germanium atoms; a starting material containing at least one member selected from the group consisting of aluminum (Al), molybdenum (Mo), tungsten (W), titanium (Ti), and tantalum (Ta), which is capable of being converted to gaseous state; and a gaseous halogenic oxidizing agent which exerts an oxidative effect on the said starting materials for film formation, into a reaction space to effect contact therebetween to thereby chemically form a plural number of precursors containing precursors under excited state, and forming a deposited film on a substrate existing in a film-forming space by the use of at least one precursors of said percursors as the feeding source for the constituent element of the deposited film.

    摘要翻译： 形成沉积膜的方法包括引入含硅和/或锗原子的气态原料; 含有选自铝（Al），钼（Mo），钨（W），钛（Ti）和钽（Ta））中的至少一种的起始材料，其能够转化为气态; 以及对所述成膜原料发挥氧化作用的气态卤素氧化剂进入反应空间，以使其间发生接触，从而化学形成含激发态前体的多种前体，并在其上形成沉积膜 存在于成膜空间中的底物通过使用至少一种所述本体的前体作为沉积膜的组成元素的进料源。

    Apparatus for forming deposited film
    4.
    发明授权
    Apparatus for forming deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US5470389A

    公开(公告)日：1995-11-28

    申请号：US212930

    申请日：1994-03-15

    申请人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

    发明人： Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

    IPC分类号： C23C16/452 ,  C23C16/00

    CPC分类号： C23C16/452

    摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.

    摘要翻译： 一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此 形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体 前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中， 并允许他们作出反应 彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

    Method for forming a multi-layer deposited film
    5.
    发明授权
    Method for forming a multi-layer deposited film 失效
    形成多层沉积膜的方法

    公开(公告)号：US4824697A

    公开(公告)日：1989-04-25

    申请号：US2217

    申请日：1987-01-12

    申请人： Shunichi Ishihara ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    发明人： Shunichi Ishihara ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    IPC分类号： H01L31/04 ,  C23C16/02 ,  C23C16/452 ,  H01L21/205 ,  C23C16/22

    CPC分类号： C23C16/02 ,  C23C16/452

    摘要： A method for forming a deposited film by introducing the active species (A) formed by decomposition of a subjective starting material gas (A) which is the major flow rate component and the active species (B) formed by decomposition of an objective starting material gas (B) which is the minor flow rate component and the activated species (C) formed from a compound (C) separately from each other into a film forming space for formation of a deposited film on a substrate and permitting said active species (A) and active species (B) to chemically react with said activated species (C) to thereby form a deposited film on the substrate comprises forming a multi-layer structure film by varying the amount of said active species (B) introduced into the film forming space.

    摘要翻译： 通过引入由主要原料气体（A）分解形成的活性物质（A）形成沉积膜的方法，所述主要原料气体（A）是通过目标原料气体分解形成的主流量分量和活性种类（B） （C），由化合物（C）形成的活性物质（C）彼此分离成用于在基材上形成沉积膜的成膜空间，并允许所述活性物质（A） 和活性物质（B）与所述活化物质（C）进行化学反应，从而在基材上形成沉积膜包括通过改变导入成膜空间的所述活性物质（B）的量来形成多层结构膜 。

    Method for forming thin film multi-layer structure member
    8.
    发明授权
    Method for forming thin film multi-layer structure member 失效
    薄膜多层结构件形成方法

    公开(公告)号：US4801474A

    公开(公告)日：1989-01-31

    申请号：US1878

    申请日：1987-01-09

    申请人： Keisha Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    发明人： Keisha Saitoh ,  Masaaki Hirooka ,  Junichi Hanna ,  Isamu Shimizu

    IPC分类号： C23C16/452 ,  C23C16/511 ,  H01L21/205 ,  C23C16/00 ,  C23C16/30

    CPC分类号： H01L21/0245 ,  C23C16/452 ,  C23C16/511 ,  H01L21/02425 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262

    摘要： A method for forming a thin multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises forming at least one layer of said semiconductor thin films on a substrate by introducing a precursor (B) formed in a decomposition space (B) which becomes the starting material for deposited film formation and an active species (C) formed in a decomposition space (C) which interacts with said precursor (B) separately into a deposition space (A) for forming a thin film to thereby effect chemical reaction through the interaction between said precursor (B) and said active species (C), and forming at least one layer of other thin films by introducing a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.

    摘要翻译： 一种用于形成具有至少一种受限于价电子的半导体薄膜和限制在带隙中的半导体薄膜中的至少一种的薄多层结构构件的方法包括：将至少一层所述半导体薄膜在 通过引入在分解空间（B）中形成的成为沉积膜形成起始材料的前体（B）和分解空间（C）中形成的与所述前体（B）相互作用的活性物质（C）的基板， 进入用于形成薄膜的沉积空间（A），从而通过所述前体（B）和所述活性物质（C）之间的相互作用进行化学反应，并通过引入气态原料形成至少一层其它薄膜 （a）薄膜形成和具有对所述起始材料（a）具有氧化作用的性质的气态卤素氧化剂进入反应空间以实现其间的接触 reby在化学上形成多种前体，包括在激发态下的前体，并使用前体的至少一种前体作为沉积膜的构成元素的进料源。

    Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor
    9.
    发明授权
    Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor 失效
    用于连续制备用于光电动势部件或图像读取光电传感器的光接收元件的装置

    公开(公告)号：US4798166A

    公开(公告)日：1989-01-17

    申请号：US943756

    申请日：1986-12-19

    申请人： Masaaki Hirooka ,  Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

    发明人： Masaaki Hirooka ,  Shunichi Ishihara ,  Junichi Hanna ,  Isamu Shimizu

    IPC分类号： C23C16/54 ,  H01L31/062 ,  H01L31/075 ,  H01L31/09 ,  H01L31/20 ,  C23C16/00

    CPC分类号： C23C16/54 ,  H01L31/062 ,  H01L31/075 ,  H01L31/095 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： There is provided an apparatus for continuously preparing an improved light receiving element for photoelectromotive force member or image-reading photosensor comprising the plural number of continuously connected reaction chambers through opening and shutting gates for forming respective constituent layers for said light receiving element and a substrate conveying belt moving through the reaction chambers, each of the reaction chambers having a film forming space, a gas supplying means being extended into the film forming space through the upper wall of the reaction chamber, an exhausting means being disposed at the bottom portion of the reaction chamber and the substrate conveying and supporting means being positioned in the reaction chamber, the said gas supplying means having (a) a conduit for transporting (i) a gaseous substance capable of contributing to form a deposited film and (b) a conduit for transporting (ii) a gaseous oxidizing agent being so disposed that the gaseous substance (i) and the oxidizing agent (ii) may be introduced into the space positioned above the surface of the substrate and they may be contacted each other in the absence of a plasma to thereby to generate plural kinds of precursors containing excited precursors and let at least one kind of those precursors directed to form a deposited film on the substrate on the substrate conveying belt.

    摘要翻译： 提供了一种用于连续地制备用于光电动势部件的改进的光接收元件或图像读取光电传感器的装置，其包括通过用于形成用于所述光接收元件的各个构成层的开闭闸门的多个连续连接的反应室和基板输送 皮带移动通过反应室，每个反应室具有成膜空间，气体供应装置通过反应室的上壁延伸到成膜空间中，排气装置设置在反应的底部 并且基板输送和支撑装置位于反应室中，所述气体供应装置具有（a）用于输送（i）能够有助于形成沉积膜的气态物质的导管，以及（b）用于输送 （ii）如此设置的气态氧化剂使得气态废物 可以将（i）和氧化剂（ii）引入位于衬底表面上方的空间中，并且它们可以在不存在等离子体的情况下彼此接触，从而产生含有被激发的前体的多种前体，并使 至少一种这样的前驱体，用于在基板输送带上的基板上形成沉积膜。