公开(公告)号：US20050122886A1

公开(公告)日：2005-06-09

申请号：US10992094

申请日：2004-11-19

申请人： Hirokazu Takahashi ,  Atsushi Onoe ,  Kiyofumi Chikuma

发明人： Hirokazu Takahashi ,  Atsushi Onoe ,  Kiyofumi Chikuma

IPC分类号： G11B9/00 ,  G11B9/02 ,  G11B9/07 ,  G11B9/08 ,  G11B9/14 ,  G11B11/00 ,  G11B11/08 ,  G11B7/00

CPC分类号： G11B11/08 ,  B82Y10/00 ,  G11B9/02 ,  G11B9/075 ,  G11B9/08 ,  G11B9/14 ,  G11B9/1409 ,  G11B9/1436 ,  G11B9/1445 ,  G11B11/007

摘要： A recording/reproducing head for performing at least one of a record operation of recording information onto a dielectric recording medium and a reproduction operation of reproducing the information from the dielectric recording medium, the recording/reproducing head provided with: a support member which extends in a longitudinal direction of the recording/reproducing head; and a projection portion which is mounted on the support member such that a tip of the projection portion faces the dielectric recording medium, the projection portion having a ridge-line on the tip, the projection portion being capable of contacting the dielectric recording medium at one point on the ridge-line.

摘要翻译： 一种记录/再现头，用于执行将记录信息记录到介质记录介质上的记录操作和从介质记录介质再现信息的再现操作中的至少一个，所述记录/再现头设置有： 记录/再现头的纵向方向; 以及突出部，其安装在所述支撑构件上，使得所述突出部的前端面向所述介电记录介质，所述突出部在所述尖端上具有脊线线，所述突出部能够使所述电介质记录介质在一个 点在脊线上。

公开(公告)号：US6163397A

公开(公告)日：2000-12-19

申请号：US271914

申请日：1999-03-18

申请人： Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

发明人： Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

IPC分类号： G02F1/37 ,  G02F1/35 ,  G02F1/355 ,  G02F1/365 ,  G02F1/377

CPC分类号： G02F1/3551 ,  G02F1/365 ,  G02F1/377 ,  G02F2001/3546

摘要： A wavelength converting device for converting a wavelength of a light is provided. The wavelength converting device includes: a substrate comprising MgO; a waveguide membrane comprising KNbO.sub.3, for guiding the light; a buffer membrane which is disposed between the substrate and the waveguide membrane and which comprises KTa.sub.x Nb.sub.(1-x) O.sub.3. A mixing rate of Ta in the KTa.sub.x Nb.sub.(1-x) O.sub.3 in the buffer membrane is in a range of 40 atom % to 60 atom % at a surface of the buffer membrane touching the substrate, and is 0 atom % at a surface of the buffer membrane touching the waveguide membrane.

摘要翻译： 提供了用于转换光的波长的波长转换装置。 波长转换装置包括：包含MgO的基板; 包括用于引导光的KNbO 3的波导膜; 缓冲膜，其设置在基板和波导膜之间，并且包括KTaxNb（1-x）O 3。 缓冲膜中的KTaxNb（1-x）O 3中的Ta的混合比在缓冲膜的与基材接触的表面处为40原子％〜60原子％的范围，并且在表面为0原子％ 缓冲膜接触波导膜。

公开(公告)号：US6149975A

公开(公告)日：2000-11-21

申请号：US265703

申请日：1999-03-10

申请人： Yuzo Tasaki ,  Mamoru Satoh ,  Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

发明人： Yuzo Tasaki ,  Mamoru Satoh ,  Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

IPC分类号： C30B29/30 ,  C23C16/40 ,  C23C16/448 ,  C30B25/02 ,  C30B25/00

CPC分类号： C23C16/4481 ,  C23C16/409 ,  C30B25/02 ,  C30B29/30

摘要： When a potassium-containing substance is formed in to a film using an organic potassium complex as a potassium source by the CVD method, it is prevented that the film formation rate is changed with the lapse of time, and the potassium content in the film thus formed is changed.As a potassium source for vaporization used for depositing the potassium-containing substance on a substrate by the CVD method, a .beta.-diketone complex of potassium that has been melted by heating to a temperature higher than its melting point and then cooled to be solidified is used.

摘要翻译： 当使用有机钾络合物作为钾源通过CVD法形成含钾物质时，可以防止成膜速度随时间而改变，因此膜中的钾含量因此 形成了改变。 作为用于通过CVD法在基材上沉积含钾物质的钾源，通过加热至高于其熔点然后冷却固化的温度而熔化的钾的β-二酮配合物是 用过的。

公开(公告)号：US06605227B2

公开(公告)日：2003-08-12

申请号：US09425940

申请日：1999-10-25

申请人： Ayako Yoshida ,  Atsushi Onoe ,  Kiyofumi Chikuma

发明人： Ayako Yoshida ,  Atsushi Onoe ,  Kiyofumi Chikuma

IPC分类号： C30B3300

CPC分类号： C04B35/495 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3241 ,  C04B2235/3251 ,  G02B6/136 ,  G02B2006/12176 ,  G02F1/377 ,  Y10S117/918

摘要： A method of manufacturing a ridge-shaped 3-dimensional waveguide, has the steps of: forming a crystal film made of a second ferroelectric oxide non-linear crystal having a refractive index higher than that of a substrate made of a first ferroelectric oxide non-linear crystal on the substrate; forming a metal film on the crystal film; forming a mask by etching the metal film; and forming a ridge portion by selectively removing the crystal film through the mask by a dry etching method.

摘要翻译： 制造脊状三维波导的方法具有以下步骤：形成由第二铁电氧化物非线性晶体构成的晶体膜，该第二铁电氧化物非线性晶体的折射率高于由第一铁电氧化物非线性晶体构成的衬底的折射率， 衬底上的直线晶体; 在晶体膜上形成金属膜; 通过蚀刻金属膜形成掩模; 并通过干蚀刻方法通过掩模选择性地除去晶体膜而形成脊部。

公开(公告)号：US06510597B2

公开(公告)日：2003-01-28

申请号：US10043177

申请日：2002-01-14

申请人： Ayako Yoshida ,  Atsushi Onoe ,  Kiyofumi Chikuma

发明人： Ayako Yoshida ,  Atsushi Onoe ,  Kiyofumi Chikuma

IPC分类号： H04R1700

CPC分类号： H03H9/02574 ,  H03H3/08 ,  Y10T29/42

摘要： A surface acoustic wave device includes a crystalline substrate with a structure selected from the group consisting of the perovskite structure, the spinel structure, and the rock salt structure. The device also includes a thin piezoelectric crystalline film having the perovskite structure and deposited on the crystalline substrate by chemical vapor deposition, and an electrode means for generating a surface acoustic wave on the thin piezoelectric crystalline film. In the device, a surface of the crystalline substrate on which the thin piezoelectric crystalline film is deposited is a mirror surface inclined at an offset angle &thgr; from the (001) plane of the crystalline substrate, and the electrode means have electrode fingers arranged in parallel to each other so that a surface acoustic wave propagates along one direction of crystalline axes of the thin piezoelectric crystalline film.

公开(公告)号：US06348754B1

公开(公告)日：2002-02-19

申请号：US09606170

申请日：2000-06-29

申请人： Ayako Yoshida ,  Atsushi Onoe ,  Kiyofumi Chikuma

发明人： Ayako Yoshida ,  Atsushi Onoe ,  Kiyofumi Chikuma

IPC分类号： H03H308

CPC分类号： H03H9/02574 ,  H03H3/08 ,  Y10T29/42

摘要： A surface acoustic wave device includes a crystalline substrate with a structure selected from the group consisting of the perovskite structure, the spinel structure, and the rock salt structure. The device also includes a thin piezoelectric crystalline film having the perovskite structure and deposited on the crystalline substrate by chemical vapor deposition, and an electrode means for generating a surface acoustic wave on the thin piezoelectric crystalline film. In the device, a surface of the crystalline substrate on which the thin piezoelectric crystalline film is deposited is a mirror surface inclined at an offset angle &thgr; from the (001) plane of the crystalline substrate, and the electrode means have electrode fingers arranged in parallel to each other so that a surface acoustic wave propagates along one direction of crystalline axes of the thin piezoelectric crystalline film.

摘要翻译： 表面声波装置包括具有选自钙钛矿结构，尖晶石结构和岩盐结构的结构的结晶基板。 该器件还包括具有钙钛矿结构并通过化学气相沉积沉积在晶体衬底上的薄压电晶体膜，以及用于在薄压电晶体膜上产生表面声波的电极装置。 在该器件中，其上沉积有薄压电晶体膜的晶体衬底的表面是与晶体衬底的（001）平面倾斜偏离角度θ的反射镜表面，并且电极装置具有并联布置的电极指 使得表面声波沿着薄压电晶体膜的晶轴的一个方向传播。

公开(公告)号：US06204957B1

公开(公告)日：2001-03-20

申请号：US09307525

申请日：1999-05-07

申请人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

发明人： Takashi Yoshino ,  Katsuhiro Imai ,  Minoru Imaeda ,  Kiyofumi Chikuma ,  Atsushi Onoe ,  Ayako Yoshida

IPC分类号： G02F137

CPC分类号： G02F1/377 ,  G02F2001/3546 ,  G02F2201/307

摘要： A second harmonic wave-generating element for generating a second harmonic wave from a fundamental wave, having an optical waveguide layer made of first epitaxial material having a fundamental composition of K3Li2−x(Nb1−YTaY)5+XO15+Z, an underclad part made of second epitaxial material having a fundamental composition of K3Li2−X+A(Nb1−Y−BTaY+B)5+X−AO15+Z, an overclad part made of third epitaxial material having a fundamental composition of K3Li2−X+C(Nb1−Y−DTaY+D)5+X−CO15+Z and formed on and contacting the optical waveguide layer, wherein X=0.006 to 0.5, Y=0.00 to 0.05, A=0.006 to 0.12, B=0.005 to 0.5, C=0.006 to 0.12, D=0.005 to 0.5, X−A≦0, X−C≧0, |A−C|≦0.006, and |B−D|≦0.005).

摘要翻译： 一种用于从基波产生二次谐波的二次谐波发生元件，具有由具有K3Li2-x（Nb1-YTaY）5 + XO15 + Z的基本组成的第一外延材料制成的光波导层，下部部分 由具有K3Li2-X + A（Nb1-Y-BTaY + B）5 + X-AO15 + Z的基本组成的第二外延材料制成，由具有K 3 Li 2 -X + C的基本组成的第三外延材料制成的外包层 （Nb1-Y-DTaY + D）5 + X-CO15 + Z，形成在光波导层上并与光波导层接触，其中X = 0.006〜0.5，Y = 0.00〜0.05，A = 0.006〜0.12，B = 0.005〜0.5 ，C = 0.006〜0.12，D = 0.005〜0.5，XA <= 0，XC> = 0，| AC |≤0.006，| BD |≤0.005）。

公开(公告)号：US06270839B1

公开(公告)日：2001-08-07

申请号：US09621739

申请日：2000-07-21

申请人： Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

发明人： Atsushi Onoe ,  Ayako Yoshida ,  Kiyofumi Chikuma

IPC分类号： C23C1600

CPC分类号： C23C16/4481

摘要： A raw material feeding apparatus is provided for a film-forming apparatus in which a thin film is formed from a solid matter as a raw material during chemical vapor-phase deposition. The apparatus includes sub-containers each having an opening for introduction of a gas, an opening for discharge of a gas, a bottom, on which a solid raw material is spread between the inlet opening and the outlet opening, and a wall defining a gap, in which a gas being introduced and discharged is made to contact the solid raw material spread on the bottom while the gas is moved on the surfaces of the material. The apparatus also includes a raw material container for receiving and holding the sub-containers. The apparatus also includes a heating device for heating the raw material container, and carrier gas conveying tubes for introducing a carrier gas into the raw material container and including a passage communicated to the outlet openings of the sub-containers.

摘要翻译： 本发明提供一种原料输送装置，用于在化学气相沉积期间以固体物质作为原料形成薄膜的成膜装置。 该装置包括各自具有用于引入气体的开口，用于排出气体的开口，底部，其上固体原料在其上在入口和出口之间铺展的子容器，以及限定间隙的壁 其中引入和排出的气体在气体在材料的表面上移动时与扩散在底部上的固体原料接触。 该设备还包括用于接收和保持子容器的原料容器。 该装置还包括用于加热原料容器的加热装置和用于将载气引入原料容器中的载气输送管，并且包括连通到子容器的出口的通道。

公开(公告)号：US5904771A

公开(公告)日：1999-05-18

申请号：US826626

申请日：1997-04-03

申请人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa ,  Atsushi Onoe ,  Kiyofumi Chikuma ,  Ayako Yoshida

发明人： Yuzo Tasaki ,  Mamoru Sato ,  Shuji Yoshizawa ,  Atsushi Onoe ,  Kiyofumi Chikuma ,  Ayako Yoshida

IPC分类号： C30B25/14 ,  C23C16/44 ,  C23C16/448 ,  C30B23/02 ,  C30B25/02 ,  C30B29/30 ,  H01L21/205 ,  H01L21/31 ,  C30B25/12

CPC分类号： C30B23/02 ,  C23C16/4481 ,  C30B23/002 ,  C30B25/02 ,  C30B29/30

摘要： A method of subliming material is provided for use in a CVD film preparation method wherein a CVD precursor is sublimed from its solid state by heating to a temperature not exceeding its melting point, thereby producing a vapor of the precursor, and the vapor of the precursor is transported to a reactor. The method of subliming material comprises the steps of forming the solid-state compound into a film, covering a back surface of the film with a non-reactive support and exposing a front surface of the film to an atmosphere as a sublimation surface. The method maintains the exposed surface area of the solid compound constant during processing.

摘要翻译： 提供了一种升华材料的方法，用于CVD膜制备方法，其中通过加热至不超过其熔点的温度从而将CVD前体从其固态升华，从而产生前体的蒸气和前体的蒸气 被运送到反应堆。 升华材料的方法包括以下步骤：将固态化合物形成膜，用非反应性载体覆盖膜的后表面，并将膜的前表面暴露于作为升华表面的气氛。 该方法在加工过程中保持固体化合物的暴露表面积恒定。

公开(公告)号：US5722184A

公开(公告)日：1998-03-03

申请号：US624894

申请日：1996-03-27

申请人： Atsushi Onoe ,  Kiyofumi Chikuma ,  Hirofumi Kubota

发明人： Atsushi Onoe ,  Kiyofumi Chikuma ,  Hirofumi Kubota

IPC分类号： G02F1/35 ,  C23C16/448 ,  C30B25/02 ,  C30B25/14 ,  C30B29/16 ,  G02F1/355 ,  F26B17/00

CPC分类号： C30B25/14 ,  C23C16/4481

摘要： A method for feeding metalorganic gas from solid raw materials in MOCVD and its device provides an absorption reagent consisting of porous grains into which a solid metalorganic material is absorbed and the passing of the carrier gas among the absorptive porous grains in the container under a high thermal condition. The mixture gas including the metalorganic gas at a constant density is obtained in stability for a long time.

摘要翻译： 在MOCVD中从固体原料中提供金属有机气体的方法及其装置提供了一种吸收剂，其由多孔颗粒组成，固体金属有机材料被吸收到该吸收剂中，并且载体气体在高热量下容纳在容器中的吸收性多孔颗粒之间 条件。 长时间稳定地得到包含恒定密度的金属有机气体的混合气体。