Semiconductor chip and method of manufacturing the same
    1.
    发明授权
    Semiconductor chip and method of manufacturing the same 失效
    半导体芯片及其制造方法

    公开(公告)号:US6060773A

    公开(公告)日:2000-05-09

    申请号:US74437

    申请日:1998-05-07

    摘要: A semiconductor chip has a nonvolatile memory formed on the upper surface side of a semiconductor substrate. The chip includes at least one recess portion formed in the lower surface of the semiconductor substrate. The recess portion is located in a region corresponding to the nonvolatile memory. A method of manufacturing the semiconductor chip is also disclosed.

    摘要翻译: 半导体芯片具有在半导体衬底的上表面侧形成的非易失性存储器。 芯片包括形成在半导体衬底的下表面中的至少一个凹部。 凹部位于与非易失性存储器对应的区域中。 还公开了制造半导体芯片的方法。

    Microcomputer having built-in nonvolatile memory for simultaneous use as a program area and a data area
    2.
    发明授权
    Microcomputer having built-in nonvolatile memory for simultaneous use as a program area and a data area 有权
    微型计算机具有内置的非易失性存储器,可作为程序区域和数据区域同时使用

    公开(公告)号:US06598137B1

    公开(公告)日:2003-07-22

    申请号:US09541086

    申请日:2000-03-31

    IPC分类号: G06F1200

    CPC分类号: G06F9/4403

    摘要: A 1-chip microcomputer having a built-in nonvolatile memory includes at least one erasable flash memory provided in a memory space of the microcomputer, a boot ROM for storing an initial program to start up the 1-chip microcomputer and a transfer program to transfer the initial program to the flash memory, and control means for, when the flash memory stores no program, transferring the initial program to the flash memory in accordance with the transfer program and subsequently removing the boot ROM from the memory space. Consequently, even if a new program is additionally stored to the nonvolatile memory in the 1-chip microcomputer, the additional program can be carried out.

    摘要翻译: 具有内置非易失性存储器的1片式微型计算机包括设置在微型计算机的存储器空间中的至少一个可擦除闪存,用于存储启动单片微机的初始程序的引导ROM和传送程序 闪速存储器的初始程序,以及控制装置,用于当闪速存储器不存储程序时,根据传送程序将初始程序传送到闪速存储器,随后从存储器空间中移除引导ROM。 因此,即使将新程序另外存储到单片微型计算机的非易失性存储器中,也可以执行附加程序。

    One-chip microcomputer and control method thereof as well as an IC card having such a one-chip microcomputer
    3.
    发明授权
    One-chip microcomputer and control method thereof as well as an IC card having such a one-chip microcomputer 有权
    单片机及其控制方法以及具有这种单片微型计算机的IC卡

    公开(公告)号:US06934884B1

    公开(公告)日:2005-08-23

    申请号:US09568683

    申请日:2000-05-11

    摘要: In order to provide a built-in self testing function, a one-chip microcomputer is equipped with an activation register for activating the test operation and a built-in self test activation pattern generator for setting initial values at test control circuits (pseudo random number generator, logical circuit testing compressor, pattern generator, and memory testing compressor). In accordance with an instruction from the CPU, a built-in self test is activated so that the results of tests of the memory and the group of logical circuits are read from the memory testing compressor and the logical circuit testing compressor, and respectively compared with expected values preliminarily stored in the memory in the one-chip microcomputer; thus, the results are diagnosed. Thus, it is possible to carry out a built-in self test without using a plurality of exclusively-used test terminals.

    摘要翻译: 为了提供内置的自检功能,单片机配备有用于激活测试操作的激活寄存器和内置的自检激活模式发生器,用于设置测试控制电路的初始值(伪随机数 发电机,逻辑电路测试压缩机,模式发生器和内存测试压缩机)。 根据CPU的指令,激活内置自检,使存储器和逻辑电路组的测试结果从存储器测试压缩器和逻辑电路测试压缩器读取,并分别与 初步存储在单片机中的存储器中的预期值; 因此,诊断结果。 因此,可以在不使用多个专用测试端子的情况下进行内置自检。

    Semiconductor device wherein detection of removal of wiring triggers impairing of normal operation of internal circuit
    6.
    发明授权
    Semiconductor device wherein detection of removal of wiring triggers impairing of normal operation of internal circuit 有权
    其中检测到布线去除的半导体装置会损害内部电路的正常工作

    公开(公告)号:US06545371B1

    公开(公告)日:2003-04-08

    申请号:US09834605

    申请日:2001-04-16

    IPC分类号: H01L2358

    摘要: A semiconductor device includes, on a protective film laminated on a circuit principal part, (i) a light blocking film provided so as to cover the circuit principal part, (ii) an aluminum oxide film provided so as to completely cover the light blocking film, and (iii) a light-blocking upper wiring provided on the aluminum oxide film. An attempt to exfoliate the light blocking film or the light blocking upper wiring causes the resistance-detection-use upper wiring to break or thin, thereby resulting in an increase in the resistance of the resistance-detection-use wiring. The increase in the resistance is detected by the resistance detecting circuit part, and malfunction or inoperativeness of the circuit principal part is caused in response of detection. By so doing, the circuit principal part can be protected from analysis.

    摘要翻译: 半导体器件包括在层叠在电路主要部分上的保护膜上,(i)设置成覆盖电路主要部分的遮光膜,(ii)设置成完全覆盖遮光膜的氧化铝膜 ,和(iii)设置在氧化铝膜上的遮光上层布线。 剥离遮光膜或遮光上布线的尝试使得电阻检测用上层布线断裂或变薄,从而导致电阻检测用布线的电阻增加。 通过电阻检测电路部分检测电阻的增加,并且响应于检测而引起电路主要部分的故障或不能操作。 通过这样做,可以保护电路主要部分免受分析。

    Induction cooking apparatus having a ferrite coil support
    8.
    发明授权
    Induction cooking apparatus having a ferrite coil support 失效
    具有铁氧体线圈支架的感应加热烹调器

    公开(公告)号:US4629843A

    公开(公告)日:1986-12-16

    申请号:US719376

    申请日:1985-04-03

    IPC分类号: H05B6/12

    摘要: An induction cooking apparatus or a ceramics hob which heats conductive food and/or a conductive pan through hysteresis loss and/or eddy current loss by exciting a coil with high frequency power, comprises a casing, a coil mounted on a coil support, and an insulation cover plate between the coil and food to be cooked. The coil support is made of ferro-magnetic material of mixture of insulation resin and ferrite powder which occupies 75-85 weight %, instead of a prior mere insulation resin so that no flux leaks below the coil support. Preferably, the coil support has a plurality of longitudinal ferrite ribs extending radially under the coil support, and still preferably, the coil support has a plurality of holes at the central portion of the same so that permeability at the central portion is essentially smaller than that at the outer portion to provide uniform flux.

    摘要翻译: 一种感应烹调设备或陶瓷炉,其通过激发具有高频功率的线圈的滞后损耗和/或涡流损耗来加热导电食物和/或导电盘,包括壳体,安装在线圈支架上的线圈和 线圈之间的绝缘盖板和待烹饪的食物。 线圈支架由绝缘树脂和铁氧体粉末混合物的铁磁材料制成,占75-85重量%,而不是以前的纯绝缘树脂,使得线圈支架下面的焊剂不会泄漏。 优选地,线圈支架具有在线圈支撑件下径向延伸的多个纵向铁氧体肋,并且优选地,线圈支撑件在其中心部分处具有多个孔,使得中心部分处的磁导率基本上小于 在外部以提供均匀的通量。

    Method of manufacturing SOI substrate
    9.
    发明授权
    Method of manufacturing SOI substrate 失效
    制造SOI衬底的方法

    公开(公告)号:US5989981A

    公开(公告)日:1999-11-23

    申请号:US886876

    申请日:1997-07-02

    IPC分类号: H01L21/265 H01L21/322

    CPC分类号: H01L21/3226 H01L21/26533

    摘要: A method of manufacturing an SOI substrate uses an SOI substrate having a first single-crystal silicon layer, an insulating layer formed on the first single-crystal silicon layer, and a second single-crystal silicon layer formed on the insulating layer. The surface of the second single-crystal silicon layer is thermally oxidized. The second single-crystal silicon layer is controlled to have a predetermined thickness by removing the thermally oxidized surface. This step controlling the second single-crystal silicon layer to have a predetermined thickness includes the step of eliminating, by annealing, a stacking fault formed by the thermal oxidation.

    摘要翻译: 制造SOI衬底的方法使用具有第一单晶硅层,形成在第一单晶硅层上的绝缘层和形成在绝缘层上的第二单晶硅层的SOI衬底。 第二单晶硅层的表面被热氧化。 通过去除热氧化表面,将第二单晶硅层控制为具有预定的厚度。 控制第二单晶硅层具有预定厚度的步骤包括通过退火消除由热氧化形成的堆垛层错的步骤。