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    Silicon nitride circuit board
    5.
    发明授权
    Silicon nitride circuit board 失效
    氮化硅电路板

    公开(公告)号：US5998000A

    公开(公告)日：1999-12-07

    申请号：US970813

    申请日：1997-11-14

    申请人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

    发明人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

    IPC分类号： H01L21/66 ,  H01L23/15 ,  H01L23/373 ,  B32B3/27

    CPC分类号： H01L23/3735 ,  C04B35/5935 ,  C04B37/021 ,  C04B37/026 ,  H01L23/15 ,  C04B2235/5445 ,  C04B2235/6565 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2237/122 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/70 ,  H01L22/12 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/83455 ,  H01L2924/01322 ,  H01L2924/10253 ,  Y10T428/24917 ,  Y10T428/24926

    摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

    摘要翻译： 本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高导热氮化硅衬底的厚度Ds 并且金属电路板的厚度DM满足关系式Ds 2DM。 氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。 氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。 金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。 根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。

    Silicon nitride circuit board
    6.
    发明授权
    Silicon nitride circuit board 失效
    氮化硅电路板

    公开(公告)号：US5928768A

    公开(公告)日：1999-07-27

    申请号：US666467

    申请日：1996-09-04

    申请人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

    发明人： Kazuo Ikeda ,  Hiroshi Komorita ,  Yoshitoshi Sato ,  Michiyasu Komatsu ,  Nobuyuki Mizunoya

    IPC分类号： H01L21/66 ,  H01L23/15 ,  H01L23/373 ,  B32B9/00

    CPC分类号： H01L23/3735 ,  C04B35/5935 ,  C04B37/021 ,  C04B37/026 ,  H01L23/15 ,  C04B2235/5445 ,  C04B2235/6565 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/96 ,  C04B2237/122 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/70 ,  H01L22/12 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/83455 ,  H01L2924/01322 ,  H01L2924/10253 ,  Y10T428/24917 ,  Y10T428/24926

    摘要： This invention provides a silicon nitride circuit board in which a metal circuit plate is bonded to a high thermal conductive silicon nitride substrate having a thermal conductivity of not less than 60 W/m K, wherein a thickness D.sub.s of the high thermal conductive silicon nitride substrate and a thickness D.sub.M of the metal circuit plate satisfy a relational formula D.sub.s .ltoreq.2D.sub.M. The silicon nitride circuit board is characterized in that, when a load acts on the central portion of the circuit board which is held at a support interval of 50 mm, a maximum deflection is not less than 0.6 mm until the silicon nitride substrate is broken. The silicon nitride circuit board is characterized in that, when an anti-breaking test is performed to the circuit board which is held at a support interval of 50 mm, an anti-breaking strength is not less than 500 MPa. The metal circuit plate or a circuit layer are integrally bonded on the silicon nitride substrate by a direct bonding method, an active metal brazing method, or an metalize method. According to the silicon nitride circuit board with the above arrangement, high thermal conductivity and excellent heat radiation characteristics can be obtained, and heat cycle resistance characteristics can be considerably improved.

    摘要翻译： PCT No.PCT / JP96 / 00723 Sec。 371日期1996年9月4日 102（e）1996年9月4日PCT PCT 1996年3月19日PCT公布。 WO96 / 29736 PCT公开号 日期1996年9月26日本发明提供了一种氮化硅电路板，其中金属电路板结合到导热率不小于60W / m K的高导热氮化硅衬底上，其中高的 导热氮化硅衬底和金属电路板的厚度DM满足关系式Ds 2DM。 氮化硅电路板的特征在于，当负载作用在保持在50mm的支撑间隔的电路板的中心部分时，直到氮化硅衬底断裂为止，最大偏转不小于0.6mm。 氮化硅电路板的特征在于，当对以50mm的支撑间隔保持的电路板进行防破坏试验时，抗断强度不低于500MPa。 金属电路板或电路层通过直接接合法，活性金属钎焊法或金属化法一体接合在氮化硅衬底上。 根据具有上述结构的氮化硅电路板，可以获得高导热性和优异的散热特性，并且可以显着提高热循环电阻特性。