公开(公告)号：US5339355A

公开(公告)日：1994-08-16

申请号：US716804

申请日：1991-06-19

申请人： Hideyasu Mori ,  Yuichi Yamazaki ,  Hiroshi Mano ,  Norimitsu Ikehata ,  Takashi Aoki ,  Yoshikazu Sano

发明人： Hideyasu Mori ,  Yuichi Yamazaki ,  Hiroshi Mano ,  Norimitsu Ikehata ,  Takashi Aoki ,  Yoshikazu Sano

IPC分类号： H04N1/00 ,  H04M3/00 ,  H04M11/00 ,  H04M11/06 ,  H04N1/32 ,  H04Q3/58 ,  H04Q11/04

CPC分类号： H04Q11/0428 ,  H04M11/06

摘要： In a key telephone system in which a plurality of data terminals 371 . . . 37n such as personal computers are connected to a key service unit 1 connected to a plurality of telephone lines 251 . . . 25m, a modem 43 is pooled so as to be usable in common for the plural data terminals 371 . . . 37n. In response to a called party number signal from the Telephone line (e.g. 251), the key service unit 1 selects a single data terminal among the data terminals 371 . . . 37n now being in standby status, and closes a communication channel between the selected data terminal (e g 371) and the modem 43, so that a status equivalent to that where the selected data terminal 371 and the modem 43 are directly connected to each other can be established. Thereafter, the key service unit 1 indicates a called party number signal reception to the modem 43, and the modem 43 transmits a call to the selected data terminal 371. When the selected data terminal 371 responds to the call from this modem 43, the key service unit 1 closes a communication channel between the modem 43 and the telephone line 251, so that a communication link between the selected data terminal 371 and the telephone line 251 can be established via the modem 43. During the process until this communication link can be established, since the selected data terminal 371 and the modem 43 are in the status equivalent to direct coupling, the key service unit 1 is not concerned in the communications between the selected data terminal 371 and thus modem 43, thus reducing the operational load applied to the key service unit 1.

摘要翻译： 在多个数据终端371的密钥电话系统中。 。 。 37n如连接到多个电话线251的密钥服务单元1连接。 。 。 25m，汇集调制解调器43，以便对于多个数据终端371可共同使用。 。 。 37n。 响应于来自电话线路的被叫方号码信号（例如251），密钥服务单元1选择数据终端371中的单个数据终端。 。 。 37n现在处于待机状态，并且关闭所选数据终端（例如371）和调制解调器43之间的通信信道，使得与所选数据终端371和调制解调器43彼此直接相连的状态相当的状态可以 成立 此后，密钥服务单元1向调制解调器43指示被叫方号码信号接收，并且调制解调器43向所选择的数据终端371发送呼叫。当所选择的数据终端371响应来自该调制解调器43的呼叫时，密钥 服务单元1关闭调制解调器43和电话线251之间的通信信道，使得可以经由调制解调器43建立所选择的数据终端371与电话线251之间的通信链路。在该过程中，直到该通信链路可以 由于所选择的数据终端371和调制解调器43处于等同于直接耦合的状态，因此密钥服务单元1不关心所选择的数据终端371和调制解调器43之间的通信，从而降低了应用于 关键服务单位1。

公开(公告)号：US5408522A

公开(公告)日：1995-04-18

申请号：US704176

申请日：1991-05-22

申请人： Norimitsu Ikehata ,  Takashi Aoki ,  Hideyasu Mori ,  Yuichi Yamazaki ,  Hiroshi Mano ,  Yoshikazu Sano

发明人： Norimitsu Ikehata ,  Takashi Aoki ,  Hideyasu Mori ,  Yuichi Yamazaki ,  Hiroshi Mano ,  Yoshikazu Sano

IPC分类号： H04M11/00 ,  H04M3/00 ,  H04M11/06 ,  H04Q3/58

CPC分类号： H04M11/06

摘要： In a modem pooling system for enabling selective connection of a plurality of data terminal units 5.sub.1 to 5.sub.n to a modem 9, each of the data terminal units 5.sub.1 to 5.sub.n is detected as to whether active or inactive; one data terminal (e.g. 5.sub.1) is selected as a responsive terminal unit from among the data terminal units determined to be active in accordance with a predetermined priority order; and the modem 9 is connected to the selected responsive terminal unit (e.g. 5.sub.1), prior to an incoming call response of the modem 9.

摘要翻译： 在用于使多个数据终端单元51至5n选择性连接到调制解调器9的调制解调器池系统中，检测数据终端单元51至5n中的每一个是活动还是非活动; 从根据预定优先级顺序被确定为有效的数据终端单元中选择一个数据终端（例如51）作为响应终端单元; 并且调制解调器9在调制解调器9的来电响应之前连接到所选择的响应终端单元（例如51）。

公开(公告)号：US5337348A

公开(公告)日：1994-08-09

申请号：US716802

申请日：1991-06-19

申请人： Yuichi Yamazaki ,  Hideyasu Mori ,  Hiroshi Mano ,  Norimitsu Ikehata ,  Takashi Aoki ,  Yoshikazu Sano

发明人： Yuichi Yamazaki ,  Hideyasu Mori ,  Hiroshi Mano ,  Norimitsu Ikehata ,  Takashi Aoki ,  Yoshikazu Sano

IPC分类号： H04Q3/58 ,  H04M3/00 ,  H04M11/00 ,  H04M11/06 ,  H04Q11/04

CPC分类号： H04M11/06 ,  H04Q11/0428

摘要： In a key telephone system in which a plurality of data terminals 37l . . . 37n such as personal computers are connected to a key service unit 1 connected to a plurality of telephone lines 25l . . . 25m, a modem 43 is pooled so as to be usable in common for the plural data terminals 37l . . . 37n. In response to a called party number signal from the telephone lines (e.g. 25l) in dial-in service, the key service unit 1 selects a single data terminal designated by an extension telephone designation signal in dial-in service from among the data terminals 37l . . . 37n, and closes a communication channel between the selected data terminal (e.g. 37l) and the modem 43, so that a status equivalent to that where the selected data terminal 37l and the modem 43 are directly connected to each other can be established. Thereafter, the key service unit 1 indicates a called party number signal reception to the modem 43, and the modem 43 transmits a call to the selected data terminal 37l. When the selected data terminal 37l responds to the call from this modem 43, the key service unit 1 closes a communication channel between the modem 43 and the telephone line 25l, so that a communication link between the selected data terminal 37l and the telephone line 25l can be established via the modem 43. During the process until this communication link can be established, since the selected data terminal 37l and the modem 43 are in the status equivalent to direct coupling, the key service unit 1 is not concerned in the communications between the selected data terminal 37l and thus modem 43, thus reducing the operational load applied to the key service unit 1.

摘要翻译： 在多个数据终端371的密钥电话系统中， 。 。 37n例如个人计算机连接到连接到多个电话线路251的密钥服务单元1。 。 。 如图25m所示，调制解调器43被合并为可以共同用于多个数据终端37l。 。 。 37n。 密钥服务单元1响应来自拨号服务中的电话线路（例如25l）的被叫方号码信号，从数据终端371中选择由拨入服务中的分机电话指定信号指定的单个数据终端 。 。 。 37n，并且关闭所选择的数据终端（例如371）和调制解调器43之间的通信信道，使得可以建立与所选择的数据终端37l和调制解调器43彼此直接相连的状态相当的状态。 此后，密钥服务单元1向调制解调器43指示被叫方号码信号接收，并且调制解调器43向所选择的数据终端371发送呼叫。 当所选择的数据终端371响应来自该调制解调器43的呼叫时，密钥服务单元1关闭调制解调器43和电话线路251之间的通信信道，使得所选择的数据终端371和电话线路251之间的通信链路 可以通过调制解调器43建立。在该过程中，直到该通信链路可以被建立为止，由于所选择的数据终端37 1和调制解调器43处于等同于直接耦合的状态，因此密钥服务单元1不涉及 选择的数据终端37l和调制解调器43，从而降低施加到密钥服务单元1的操作负载。

公开(公告)号：US5319700A

公开(公告)日：1994-06-07

申请号：US716803

申请日：1991-06-19

申请人： Hiroshi Mano ,  Hideyasu Mori ,  Yuichi Yamazaki ,  Norimitsu Ikehata ,  Takashi Aoki ,  Yoshikazu Sano

发明人： Hiroshi Mano ,  Hideyasu Mori ,  Yuichi Yamazaki ,  Norimitsu Ikehata ,  Takashi Aoki ,  Yoshikazu Sano

IPC分类号： H04L29/08 ,  H04L29/10 ,  H04M3/00 ,  H04M11/00 ,  H04Q3/58 ,  H04Q11/04

CPC分类号： H04Q11/0471 ,  H04Q2213/09 ,  H04Q2213/19 ,  H04Q2213/194 ,  H04Q2213/199 ,  H04Q2213/22 ,  H04Q2213/334 ,  H04Q2213/385

摘要： In a key telephone system in which a plurality of data terminals 37l . . . 37n such as personal computers are connected to a key service unit 1 connected to a plurality of ISDNs 23l . . . 23m, a terminal adapter (TA) 41 is pooled so as to be usable in common for the plural data terminals 37l . . . 37n. In response to a setup signal from an ISDN (e.g. 23l), the key service unit 1 selects a single data terminal designated by a subaddress included in the setup signal from among the data terminals 37l . . . 37n, and closes a communication channel between the selected data terminal (e.g. 37l) and the TA 41, so that a status equivalent to that where the selected data terminal 37l and the TA 41 are directly connected to each other can be established. Thereafter, the key service unit 1 transmits a setup signal to the TA 41, and the TA 41 transmits a call to the selected data terminal 37l. When the selected data terminal 37l responds to the call from this TA 41, the key service unit 1 closes a communication channel between the TA 41 and the ISDN 25l, so that a communication link between the selected data terminal 37l and the ISDN 23l can be established via the TA 41. During the process until this communication link can be established, since the selected data terminal 37l and the TA 41 are in the status equivalent to direct coupling, the key service unit 1 is not concerned in the communications between the selected data terminal 37l and thus TA 41, thus reducing the operational load applied to the key service unit 1.

摘要翻译： 在多个数据终端371的密钥电话系统中， 。 。 37n，例如个人计算机连接到连接到多个ISDN 231的密钥服务单元1。 。 。 如图23m所示，汇集了终端适配器（TA）41，以便对多个数据终端371可共同使用。 。 。 37n。 响应于来自ISDN（例如23l）的设置信号，密钥服务单元1从数据终端371中选择由包括在建立信号中的子地址指定的单个数据终端。 。 。 37n，并且关闭所选择的数据终端（例如371）和TA 41之间的通信信道，从而可以建立与所选数据终端37l和TA 41直接相连的状态相当的状态。 此后，密钥服务单元1向TA 41发送建立信号，并且TA 41向所选择的数据终端371发送呼叫。 当所选数据终端371响应来自该TA 41的呼叫时，密钥服务单元1关闭TA 41与ISDN 251之间的通信信道，使得所选择的数据终端371和ISDN 23l之间的通信链路可以是 通过TA41建立。在该过程中，直到可以建立该通信链路为止，由于所选择的数据终端371和TA 41处于与直接耦合相同的状态，所以密钥服务单元1不关心所选择的 数据终端37l，从而降低TA 41，从而降低施加到密钥服务单元1的操作负载。

公开(公告)号：US08710672B2

公开(公告)日：2014-04-29

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US08487449B2

公开(公告)日：2013-07-16

申请号：US13215463

申请日：2011-08-23

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

IPC分类号： H01L29/70 ,  H01L21/4763

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。 绝缘膜形成在第一导电层上并包括孔。 在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。 在孔中的侧表面上的催化剂底层上形成催化剂失活膜。 在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。 在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

公开(公告)号：US08398927B2

公开(公告)日：2013-03-19

申请号：US12495004

申请日：2009-06-30

申请人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

发明人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

IPC分类号： B01J19/08

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/16

摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.

摘要翻译： 碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

公开(公告)号：US20130056873A1

公开(公告)日：2013-03-07

申请号：US13224929

申请日：2011-09-02

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Akihiro Kajita ,  Atsuko Sakata

IPC分类号： H01L23/532

CPC分类号： H01L23/53276 ,  H01L21/28556 ,  H01L21/76805 ,  H01L21/76852 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76885 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to an embodiment of the present invention, a device includes a substrate, a base body formed on or above the substrate, and a pair of wirings. The base body has a line shape in a plan view and extends along a length direction. The pair of wirings includes first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body; and first and second graphene layers formed on both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively, and extending along the length direction of the base body, the graphene layers includes a plurality of graphenes laminated perpendicularly with respect to both side surfaces of the base body, respectively.

摘要翻译： 根据本发明的实施例，一种装置包括基板，形成在基板上或上方的基体，以及一对布线。 基体在平面图中具有线状并沿长度方向延伸。 一对配线包括在基体的长度方向上形成在基体的两侧面上的第一和第二催化剂层，夹着基体; 以及分别以与基体的长度方向接触的方式形成在基体的两侧面上的第一和第二石墨烯层，所述石墨烯层包括垂直层叠的多个石墨烯层 分别相对于基体的两个侧面。

公开(公告)号：US20120228614A1

公开(公告)日：2012-09-13

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20110233779A1

公开(公告)日：2011-09-29

申请号：US13052367

申请日：2011-03-21

申请人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

发明人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

IPC分类号： H01L23/532 ,  H01L21/28 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y10/00 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.

摘要翻译： 根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜 作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳 埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。