公开(公告)号：US06475820B2

公开(公告)日：2002-11-05

申请号：US09882145

申请日：2001-06-15

申请人： Hiroshi Nakajima ,  Shigeki Hashimoto ,  Tsunenori Asatsuma

发明人： Hiroshi Nakajima ,  Shigeki Hashimoto ,  Tsunenori Asatsuma

IPC分类号： H01L2100

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2304/04 ,  H01S2304/12

摘要： The present invention provides a method for growing a semiconductor layer by which the size of generable voids is controllable, inclination of the c-axis of the semiconductor crystal is avoidable and the defects in the semiconductor layer is reducible, in which a first semiconductor layer typically made of GaN is formed in a ridge pattern on a substrate, and a second semiconductor layer typically comprising GaN is then formed on the first semiconductor layer under a condition by which the growth rate in the direction parallel to the major plane of the substrate is larger than that in the direction perpendicular thereto, which is attainable by controlling the pressure in a reaction chamber in which the vapor-phase growth proceeds at 53,200 Pa (400 Torr) or above, to allow the side planes of the second semiconductor layer incline at an acute angle to the bottom plane thereof.

公开(公告)号：US20100040103A1

公开(公告)日：2010-02-18

申请号：US12536210

申请日：2009-08-05

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Kunihiko Tasai ,  Tsunenori Asatsuma ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Koshi Tamamura ,  Kunihiko Tasai ,  Tsunenori Asatsuma ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

IPC分类号： H01S5/20

CPC分类号： H01S5/327 ,  H01S5/305 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3216

摘要： The present invention provides a semiconductor device including: a semiconductor layer including an n-type first cladding layer, an n-type second cladding layer, an active layer, a p-type first cladding layer, and a p-type second cladding layer in this order on an InP substrate. The n-type first cladding layer and the n-type second cladding layer satisfy formulas (1) to (4) below, or the p-type first cladding layer and the p-type second cladding layer satisfy formulas (5) to (8) below. 1×1017 cm−3≦N1≦1×1020 cm−3  (1) N1>N2  (2) D1>D2  (3) Ec1

摘要翻译： 本发明提供一种半导体器件，其包括：包括n型第一包层，n型第二包层，有源层，p型第一包层和p型第二包层的半导体层， 这个顺序在InP衬底上。 n型第一包层和n型第二包层满足下式（1）〜（4），p型第一包层和p型第二包层满足式（5）〜（8） ）。 1×1017cm-3＆nlE; N1＆nlE; 1×1020cm-3（1）N1> N2（2）D1> D2（3）Ec1

公开(公告)号：US06471769B2

公开(公告)日：2002-10-29

申请号：US09365903

申请日：1999-08-03

申请人： Shigeki Hashimoto ,  Katsunori Yanashima ,  Tsunenori Asatsuma ,  Masao Ikeda

发明人： Shigeki Hashimoto ,  Katsunori Yanashima ,  Tsunenori Asatsuma ,  Masao Ikeda

IPC分类号： C30B2514

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406

摘要： When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (H2/(H2+NH3)) is specified to 0.3

摘要翻译： 当通过使用III族元素的原料气相生长制造氮化物系III-V族化合物半导体时，作为V族元素和氢的原料的氨，氢气与氢的总量的气相摩尔比 （H2 /（H2 + NH3））为0.3 <（H2 /（H2 + NH3））<0.7,0.3 <（H2 /（H2 + NH3））<0.6或0.4 <（H2 /（H2 + NH3））<0.5。 因此，可以制造氮化物系III-V族化合物半导体，其具有较少的非发射中心和优异的结晶度。

公开(公告)号：US20090059985A1

公开(公告)日：2009-03-05

申请号：US12038062

申请日：2008-02-27

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

IPC分类号： H01S5/32

CPC分类号： H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppress the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

摘要翻译： 具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及 提供了一种有源层及其p型覆层。 与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族 元素由Se和Te组成。 本发明的n型层的特征在于具有大的能隙，能够有效地抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷的导带底部的高能量 。

公开(公告)号：US07899104B2

公开(公告)日：2011-03-01

申请号：US12038062

申请日：2008-02-27

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Kunihiko Tasai ,  Koshi Tamamura ,  Hiroshi Nakajima ,  Hitoshi Nakamura ,  Sumiko Fujisaki ,  Takeshi Kikawa

IPC分类号： H01S5/00

CPC分类号： H01S5/327 ,  H01S5/0218 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3059

摘要： An n-type cladding layer structure which has good luminescence properties without the use of substances corresponding to RoHS Directive and a high Cl-doping efficiency, i.e. which facilitates the manufacture of a semiconductor optical element and device with low crystal defects and high reliability, and an active layer and a p-type cladding layer therefor are provided. The n-type layer being lattice matched to an InP substrate and containing Group II-VI compound as a main ingredient is a Group II-VI compound semiconductor, in which the Group II elements consist of Mg, Zn, and Be and the Group VI elements consist of Se and Te. The n-type layer of the present invention is characterized by a large energy gap, high energy of the bottom of a conduction band that is effective for suppressing the Type II luminescence, high carrier concentration, and low crystal defects attributed to a good quality crystallinity.

摘要翻译： 具有良好发光特性的n型包覆层结构，不使用与RoHS指令相对应的物质和高Cl掺杂效率，即有助于制造具有低晶体缺陷和高可靠性的半导体光学元件和器件，以及 提供了一种有源层及其p型覆层。 与InP基质晶格匹配并含有II-VI族化合物作为主要成分的n型层是II族化合物半导体，II族元素由Mg，Zn和Be组成，第VI族 元素由Se和Te组成。 本发明的n型层的特征在于具有大的能隙，导带的底部的高能量对于抑制II型发光，高载流子浓度和归因于良好质量结晶度的低晶体缺陷是有效的 。

公开(公告)号：US20050145856A1

公开(公告)日：2005-07-07

申请号：US11045652

申请日：2005-01-28

申请人： Tsunenori Asatsuma ,  Hiroshi Nakajima ,  Osamu Goto ,  Tsuyoshi Tojo

发明人： Tsunenori Asatsuma ,  Hiroshi Nakajima ,  Osamu Goto ,  Tsuyoshi Tojo

IPC分类号： H01L21/28 ,  H01L21/205 ,  H01L33/22 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01S5/042 ,  H01L21/00 ,  H01L27/15 ,  H01L29/24 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/38 ,  H01L2933/0016

摘要： The present invention provides a gallium nitride semiconductor device including an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer. The gallium nitride semiconductor device is characterized in that recessed portions are present dispersely over the whole surface area of the underlying compound semiconductor layer in contact with the electrode metallic film in such a manner that at least two recessed portions having a depth greater than the lattice constant of crystals constituting the underlying compound semiconductor layer are present on a width direction line in any 1 μm width region of the whole surface area.

摘要翻译： 本发明提供了一种氮化镓半导体器件，其包括在下面的氮化镓化合物半导体层上由金属膜构成的电极。 氮化镓半导体器件的特征在于，凹陷部分分散存在于与电极金属膜接触的下面的化合物半导体层的整个表面区域上，使得至少两个深度大于晶格常数的凹部 构成下面的化合物半导体层的晶体存在于整个表面积的任何1μm宽度区域中的宽度方向线上。

公开(公告)号：US07668217B2

公开(公告)日：2010-02-23

申请号：US11882055

申请日：2007-07-30

申请人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Tsukuru Ohtoshi ,  Takeshi Kikawa ,  Sumiko Fujisaki ,  Shigehisa Tanaka

发明人： Katsumi Kishino ,  Ichiro Nomura ,  Tsunenori Asatsuma ,  Hitoshi Nakamura ,  Tsukuru Ohtoshi ,  Takeshi Kikawa ,  Sumiko Fujisaki ,  Shigehisa Tanaka

IPC分类号： H01S3/04 ,  H01S5/00

CPC分类号： H01S5/327 ,  B82Y20/00 ,  H01S5/22 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/347 ,  H01S2301/173 ,  H01S2304/02

摘要： The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.

摘要翻译： 本发明提供一种使用InP衬底并具有能够在室温下连续振荡的层叠结构的基于II族的II-VI族半导体激光器。 通过在InP衬底上使用含Be的晶格匹配的II-VI半导体构成半导体激光器的基本结构。 活性激光器，光导层和包覆层以具有I型带阵列的双异质结构构成，以提高载流子对活性层的注入效率。 此外，构成能够增强对有源层的光学限制的有源层，导光层和包层，并且包层由块状晶体构成。

公开(公告)号：US20090161716A1

公开(公告)日：2009-06-25

申请号：US12379216

申请日：2009-02-17

申请人： Tsunenori Asatsuma ,  Yoshiro Takiguchi ,  Shoji Hirata

发明人： Tsunenori Asatsuma ,  Yoshiro Takiguchi ,  Shoji Hirata

IPC分类号： H01S5/22

CPC分类号： H01S5/1082 ,  H01S5/0286 ,  H01S5/1014 ,  H01S5/204 ,  H01S5/2063 ,  H01S5/2072 ,  H01S5/2214 ,  H01S5/2231

摘要： A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a feedback light inhibition part is provided on a main-emitting-side end face, and effects of feedback light in the vicinity of lateral boundaries of the light emitting region are inhibited by the feedback light inhibition part.

摘要翻译： 提供能够有效地抑制反馈光的影响的激光二极管。 激光二极管包括基板，以及包括第一导电半导体层，具有发光区域的有源层和在其表面上具有突出部分的第二导电半导体层的层叠结构，其中反馈光 抑制部分设置在主发光侧端面上，并且反射光抑制部分抑制了发光区域的横向边界附近的反馈光的影响。

公开(公告)号：USRE38613E1

公开(公告)日：2004-10-05

申请号：US10174289

申请日：2002-09-18

申请人： Hiroji Kawai ,  Tsunenori Asatsuma ,  Fumihiko Nakamura

发明人： Hiroji Kawai ,  Tsunenori Asatsuma ,  Fumihiko Nakamura

IPC分类号： H01L2104

CPC分类号： H01L33/325 ,  C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262

摘要： A new and improved method for growing a p-type nitride III-V compound semiconductor is provided which can produce a p-type nitride compound semiconductors having a high carrier concentration, without the need for annealing to activate impurities after growth. In a preferred embodiment, a p-type nitride compound semiconductor, such as p-type GaN, is grown by metal organic chemical vapor deposition methods using a nitrogen source material which does not release hydrogen during release of nitrogen and the semiconductor is grown in an inactive gas. The nitrogen source materials may be selected from nitrogen compounds that contain hydrogen radicals groups and alkyl radicals groups and/or phenyl radicals groups provided that the total amount of hydrogen radicals groups is less than or equal to the sum total of alkyl radicals groups and phenyl radicals groups present in the nitrogen compound used as the nitrogen source material.

公开(公告)号：US08179941B2

公开(公告)日：2012-05-15

申请号：US13099503

申请日：2011-05-03

申请人： Shoji Hirata ,  Tsunenori Asatsuma ,  Yoshiro Takiguchi

发明人： Shoji Hirata ,  Tsunenori Asatsuma ,  Yoshiro Takiguchi

IPC分类号： H01S5/00

CPC分类号： H01S5/22 ,  H01S5/0207 ,  H01S5/1064 ,  H01S5/1085 ,  H01S5/2036 ,  H01S5/2054 ,  H01S5/2235 ,  H01S2301/18 ,  H01S2301/206

摘要： A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

摘要翻译： 实现NFP稳定且均匀形状的激光二极管。 激光二极管在半导体衬底上包括有源层，限制被注入有源层的电流的一个或多个条状电流限制结构以及包括一个或多个条形凸起的堆叠结构 部分沿电流限制结构的延伸方向延伸。