LED array chip
    1.
    发明授权
    LED array chip 有权
    LED阵列芯片

    公开(公告)号:US06515309B1

    公开(公告)日:2003-02-04

    申请号:US09472349

    申请日:1999-12-27

    IPC分类号: H01L3300

    摘要: An LED array chip comprises a semiconductor substrate having a front surface and a side surface. The first surface and the front surface come together at an end of the chip to define an end portion of said semiconductor substrate that has an acute angle between the first surface and the front surface. The end of the chip defines an outermost dimension of the chip. The first surface extends further away from the front surface than the diffuison depth of the light emitting elements. A method of manufacturing an LED array chip includes the steps of: forming grooves between adjacent LED arrays of the plurality of LED arrays, each of the grooves having opposing side walls each of which makes an acute angle with the front surface; and dicing the semiconductor wafer except for the opposing side walls of each of the grooves to separate the plurality of LED arrays into individual LED array chips.

    摘要翻译: LED阵列芯片包括具有前表面和侧表面的半导体衬底。 第一表面和前表面在芯片的一端汇合在一起,以限定在第一表面和前表面之间具有锐角的所述半导体衬底的端部。 芯片的端部限定了芯片的最外层尺寸。 第一表面比发光元件的扩散深度远离前表面延伸。 制造LED阵列芯片的方法包括以下步骤:在多个LED阵列的相邻LED阵列之间形成凹槽,每个凹槽具有与前表面成锐角的相对侧壁; 并且除了每个凹槽的相对的侧壁之外的半导体晶片划片以将多个LED阵列分离成单独的LED阵列芯片。

    Coil component, powder-compacted inductor and winding method for coil component
    3.
    发明授权
    Coil component, powder-compacted inductor and winding method for coil component 有权
    线圈组件,粉末压电感器和线圈组件的绕组方法

    公开(公告)号:US08864060B2

    公开(公告)日:2014-10-21

    申请号:US13449976

    申请日:2012-04-18

    摘要: A coil component includes an air-core winding wire portion wound by a wire with a plurality of wound layers by alignment winding, a spiral shaped wound portion in which the wire wound in a spiral shape from an inner edge of an end surface toward an outer edge thereof along the end surface while in contact with the end surface on one side in the axis direction of the winding wire portion, a first lead portion extended and extracted outward from a winding first end point of the spiral shaped wound portion, and a second lead portion extended and extracted outward from a winding second end point at the outer circumference of the winding wire portion.

    摘要翻译: 线圈部件包括由具有通过对准绕组的多个卷绕层的线缠绕的空心绕组线,螺旋形缠绕部分,其中线从端表面的内边缘向外部缠绕成螺旋形状 其沿着所述端面与所述绕线部的轴线方向的一侧的端面接触,从所述螺旋状卷绕部的卷绕的第一端部向外延伸并向外伸出的第一引导部, 引线部分从卷绕线部分的外周上的绕组第二端点向外延伸和提取。

    Electronic device
    4.
    发明授权
    Electronic device 有权
    电子设备

    公开(公告)号:US08385077B2

    公开(公告)日:2013-02-26

    申请号:US12900390

    申请日:2010-10-07

    申请人: Satoru Yamada

    发明人: Satoru Yamada

    摘要: An electronic device includes a housing having an accommodation space, a first support body being slidably insertable into the accommodation space in parallel with a predetermined plane, a second support body coupled with the first support body rotatably around a rotation axis parallel to a front side of the housing and being rotatable between a reference attitude disposed in the same plane with respect to the first support body and an inclined attitude disposed at a given angle with respect to the first support body, and a drive mechanism for changing the attitude of the second support body.

    摘要翻译: 电子设备包括具有容纳空间的壳体,与预定平面平行地可滑动地插入到容纳空间中的第一支撑体;与第一支撑体可旋转地围绕平行于预定平面的旋转轴线可旋转地连接的第二支撑体 所述壳体能够相对于所述第一支撑体设置在同一平面中的基准姿态和相对于所述第一支撑体以给定角度设置的倾斜姿态之间旋转;以及驱动机构,用于改变所述第二支撑件的姿态 身体。

    Semiconductor device having a device isolation structure
    5.
    发明授权
    Semiconductor device having a device isolation structure 有权
    具有器件隔离结构的半导体器件

    公开(公告)号:US08368169B2

    公开(公告)日:2013-02-05

    申请号:US12897095

    申请日:2010-10-04

    IPC分类号: H01L21/70

    摘要: An example semiconductor device includes a trench formed in a semiconductor substrate to define an active region, a filling dielectric layer provided within the trench, an oxide layer provided between the filling dielectric layer and the trench, a nitride layer provided between the oxide layer and the filling dielectric layer, and a barrier layer provided between the oxide layer and the nitride layer.

    摘要翻译: 示例性半导体器件包括形成在半导体衬底中以限定有源区的沟槽,设置在沟槽内的填充介电层,设置在填充介电层和沟槽之间的氧化物层,设置在氧化物层和 填充介电层,以及设置在氧化物层和氮化物层之间的阻挡层。

    Coil component
    7.
    发明授权
    Coil component 有权
    线圈组件

    公开(公告)号:US08207808B2

    公开(公告)日:2012-06-26

    申请号:US13093299

    申请日:2011-04-25

    IPC分类号: H01F27/29

    摘要: A coil component includes a core formed by a magnetic material, a coil embedded in the core, a part of a terminal portion of the coil protruded from a side surface of the core, and a tabular terminal, a part thereof protruded from the side surface of the core and partly connected with the protruded part of the terminal portion of the coil. The protruded part of the terminal portion of the coil and the protruded part of the tabular terminal are respectively bent toward the bottom surface side of the core along the side surface of the core, and the protruded and bent part of the terminal portion of the coil is arranged between the protruded and bent part of the tabular terminal and the core.

    摘要翻译: 线圈部件包括由磁性材料形成的芯部,嵌入在芯部中的线圈,从芯部的侧表面突出的线圈的端子部分的一部分,以及从侧面突出的部分 并且部分地与线圈的端子部分的突出部分连接。 线圈的端子部分的突出部分和平板状端子的突出部分分别沿着芯的侧表面朝着芯的底表面侧弯曲,并且线圈的端子部分的突出和弯曲部分 布置在板状端子的突出部分和弯曲部分之间。

    ELECTROCONDUCTIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS
    8.
    发明申请
    ELECTROCONDUCTIVE MEMBER, PROCESS CARTRIDGE AND ELECTROPHOTOGRAPHIC APPARATUS 有权
    电子元件,工艺盒和电子照相设备

    公开(公告)号:US20120070188A1

    公开(公告)日:2012-03-22

    申请号:US13305262

    申请日:2011-11-28

    IPC分类号: G03G21/16 G03G15/02

    摘要: An electroconductive member excellent in durability even when applying direct current voltage over a long period of time is provided. Disclosed is an electroconductive member including an electroconductive mandrel and an electroconductive layer, wherein: the electroconductive layer includes a binder resin and an electroconductive metal oxide particle dispersed in the electroconductive layer; the metal oxide particle has a group represented by the following structural formula (1) on the surface of the metal oxide particle; and the group represented by the following structural formula (1) is introduced by substituting a hydrogen atom of a hydroxyl group as a functional group originating from the metal oxide particle, with the group represented by the following structural formula (1): —R—SO3H

    摘要翻译: 提供即使在长时间施加直流电压时耐久性优异的导电构件。 公开了一种导电构件,其包括导电心轴和导电层,其中:导电层包括分散在导电层中的粘合剂树脂和导电金属氧化物颗粒; 金属氧化物颗粒在金属氧化物颗粒的表面上具有由以下结构式(1)表示的基团; 并且由以下结构式(1)表示的基团代替由羟基作为起始金属氧化物颗粒的官能团的氢原子引入由以下结构式(1)表示的基团:-R- SO3H

    Semiconductor device having silicon layer in a gate electrode
    9.
    发明申请
    Semiconductor device having silicon layer in a gate electrode 有权
    在栅电极中具有硅层的半导体器件

    公开(公告)号:US20090233433A1

    公开(公告)日:2009-09-17

    申请号:US12453737

    申请日:2009-05-20

    IPC分类号: H01L21/28

    摘要: A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.

    摘要翻译: 一种形成半导体器件的方法依次包括在半导体衬底上沉积栅极绝缘膜和硅层,将硼注入到硅层中,通过热处理硅层来扩散硼,将磷注入到硅中 层,通过热处理硅层至少扩散至少磷,并通过使用干蚀刻技术图案化硅层。

    Semiconductor device including a fin field effect transistor and method of manufacturing the same
    10.
    发明申请
    Semiconductor device including a fin field effect transistor and method of manufacturing the same 有权
    包括鳍状场效应晶体管的半导体器件及其制造方法

    公开(公告)号:US20080099850A1

    公开(公告)日:2008-05-01

    申请号:US11976252

    申请日:2007-10-23

    IPC分类号: H01L29/78 H01L21/336

    摘要: In a fin field effect transistor (Fin FET)and a method of manufacturing the Fin FET, the Fin FET includes an active pattern inside which insulating layer patterns are formed, an isolation layer pattern enclosing a sidewall of the active pattern such that an opening exposing a sidewall of the active pattern located between the insulating layer patterns is formed, a gate electrode formed on the active pattern to fill the opening, impurity regions formed at portions of the active pattern adjacent to sidewalls of the gate electrode, an insulating interlayer covering the active pattern and the gate electrode and contact plugs formed through portions of the insulating interlayer and the active pattern adjacent to the sidewalls of the gate electrode such that the contact plug makes contact with the impurity region.

    摘要翻译: 在翅片场效应晶体管(Fin FET)和制造Fin FET的方法中,Fin FET包括其中形成绝缘层图案的有源图案,包围有源图案的侧壁的隔离层图案,使得开口露出 形成位于绝缘层图案之间的有源图案的侧壁,形成在有源图案上以填充开口的栅电极,形成在与栅电极的侧壁相邻的有源图案的部分处的杂质区,覆盖 有源图案和通过绝缘夹层的一部分和与栅电极的侧壁相邻的有源图案形成的栅电极和接触插塞,使得接触插塞与杂质区接触。