摘要:
A III-nitride optoelectronic device comprising a light emitting diode (LED) or laser diode with a peak emission wavelength longer than 500 nm. The III-nitride device has a dislocation density, originating from interfaces between an indium containing well layer and barrier layers, less than 9×109 cm−2. The III-nitride device is grown with an interruption time, between growth of the well layer and barrier layers, of more than 1 minute.
摘要翻译:III族氮化物光电子器件包括具有长于500nm的峰值发射波长的发光二极管(LED)或激光二极管。 III族氮化物器件具有源于含铟阱层和阻挡层之间的界面的位错密度,小于9×10 9 cm -2。 III族氮化物器件在阱层和阻挡层的生长之间的中断时间长达1分钟以上生长。
摘要:
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要:
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要:
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要:
A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.
摘要:
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译:使用有意识的基板改善半极性(Al,In,Ga,B)N半导体薄膜生长的方法。 具体地说,该方法包括有意地将基板,基板加载到反应器中,在氮气和/或氢气和/或氨气流下加热基板,在加热的基板上沉积In x Ga 1-x N成核层,沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上,并在氮气过压下冷却衬底。
摘要:
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要:
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译:使用有意识的基板改善半极性(Al,In,Ga,B)N半导体薄膜生长的方法。 具体地说,该方法包括有意地将基板,基板加载到反应器中,在氮气和/或氢气和/或氨气流下加热基板,在加热的基板上沉积In x Ga 1-x N成核层,沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上,并在氮气过压下冷却衬底。
摘要:
A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要:
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译:使用有意识的基板改善半极性(Al,In,Ga,B)N半导体薄膜生长的方法。 具体地说,该方法包括有意地将基板,基板加载到反应器中,在氮气和/或氢气和/或氨气流下加热基板,在加热的基板上沉积In x Ga 1-x N成核层,沉积半极性氮化物 半导体薄膜在InxGa1-xN成核层上,并在氮气过压下冷却衬底。