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13 条记录 (耗时 0.019 秒)

    PLASMA GENERATING APPARATUS
    1.
    发明申请
    PLASMA GENERATING APPARATUS 有权
    等离子体发生装置

    公开(公告)号：US20100237777A1

    公开(公告)日：2010-09-23

    申请号：US12599799

    申请日：2008-04-18

    申请人： Hong-Seub Kim ,  Hyeon-Dong Shin

    发明人： Hong-Seub Kim ,  Hyeon-Dong Shin

    IPC分类号： H01J65/04

    CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32091

    摘要： Provided is a plasma generating apparatus. The apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna holder. The vacuum chamber has a hollow interior and is sealed at its top a by a vacuum plate that has a through-hole at its center. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit is disposed within the vacuum chamber under the vacuum plate. The antenna cover covers and is coupled to a top of the antenna unit and receives and forwards an external source RF to the antenna unit. The cover holder is caught by an upper surface of the vacuum plate and suspends and holds the antenna unit.

    摘要翻译： 提供了一种等离子体产生装置。 该装置包括一个真空室，一个静电卡盘（ESC），一个天线座。 真空室具有中空的内部，并通过在其中心具有通孔的真空板在其顶部a密封。 ESC设置在真空室的内部中心。 天线单元设置在真空室下的真空室内。 天线盖覆盖并耦合到天线单元的顶部，并接收并转发外部源RF到天线单元。 盖保持器被真空板的上表面卡住并悬挂并保持天线单元。

    Plasma generating apparatus having antenna with impedance controller
    2.
    发明授权
    Plasma generating apparatus having antenna with impedance controller 有权
    具有带有阻抗控制器的天线的等离子体发生装置

    公开(公告)号：US08181597B2

    公开(公告)日：2012-05-22

    申请号：US12599799

    申请日：2008-04-18

    申请人： Hong-Seub Kim ,  Hyeon-Dong Shin

    发明人： Hong-Seub Kim ,  Hyeon-Dong Shin

    IPC分类号： H01L21/3065 ,  C23C16/00

    CPC分类号： H01J37/321 ,  H01J37/32082 ,  H01J37/32091

    摘要： Provided is a plasma generating apparatus. The apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna holder. The vacuum chamber has a hollow interior and is sealed at its top by a vacuum plate that has a through-hole at its center. The ESC is disposed at an internal center of the vacuum chamber. The antenna unit is disposed within the vacuum chamber under the vacuum plate. The antenna cover covers and is coupled to a top of the antenna unit and receives and forwards an external source RF to the antenna unit. The cover holder is caught by an upper surface of the vacuum plate and suspends and holds the antenna unit.

    摘要翻译： 提供了一种等离子体产生装置。 该装置包括一个真空室，一个静电卡盘（ESC），一个天线座。 真空室具有中空的内部，并通过在其中心具有通孔的真空板在其顶部被密封。 ESC设置在真空室的内部中心。 天线单元设置在真空室下的真空室内。 天线盖覆盖并耦合到天线单元的顶部，并接收并转发外部源RF到天线单元。 盖保持器被真空板的上表面卡住并悬挂并保持天线单元。

    Gas diffusion plate for use in ICP etcher
    3.
    发明授权
    Gas diffusion plate for use in ICP etcher 有权
    用于ICP蚀刻机的气体扩散板

    公开(公告)号：US07156950B2

    公开(公告)日：2007-01-02

    申请号：US10348550

    申请日：2003-01-21

    申请人： Hong-Seub Kim ,  Bu-Jin Ko

    发明人： Hong-Seub Kim ,  Bu-Jin Ko

    IPC分类号： C23F1/10 ,  H01L21/306 ,  C23C16/507

    CPC分类号： H01L21/6715 ,  H01J37/321 ,  H01J37/3244

    摘要： A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing the plurality of balls, the porous plate having a circular planar shape; a plurality of gas flow grooves formed on an upper surface of the porous plate; and a gas distribution plate having a plurality of gas-feed holes at the bottom thereof and a plurality of gas-feed passages in the side portion thereof, the gas distribution plate surrounding lower and side portions of the porous plate.

    摘要翻译： 在本发明中提供了向ICP（电感耦合等离子体）蚀刻器的腔室供给处理气体的气体扩散板。 气体扩散板包括由多个球构成的多孔板，并且通过压缩和固化多个球而形成，多孔板具有圆形平面形状; 形成在所述多孔板的上表面上的多个气流槽; 以及气体分配板，其底部具有多个气体供给孔，并且在其侧部具有多个气体供给通道，所述气体分配板围绕所述多孔板的下部和侧部。

    PLASMA GENERATING APPARATUS
    4.
    发明申请
    PLASMA GENERATING APPARATUS 审中-公开
    等离子体发生装置

    公开(公告)号：US20080168945A1

    公开(公告)日：2008-07-17

    申请号：US11697678

    申请日：2007-04-06

    申请人： Hong-Seub Kim

    发明人： Hong-Seub Kim

    IPC分类号： H05H1/00 ,  C23C16/00 ,  H01L21/306

    CPC分类号： H05H1/46 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32733 ,  H01L21/67069 ,  H01L21/6833

    摘要： Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.

    摘要翻译： 提供了一种等离子体产生装置。 等离子体发生装置包括真空室，静电卡盘（ESC），天线单元和天线罩。 真空室具有中空的内部并且在顶部被密封。 设置在真空室的内部中心的ESC接收外部偏置射频（RF）。 天线单元覆盖并密封绝缘真空板的通孔。 天线盖覆盖天线单元的顶部并且具有气体注入端口。

    Impedance matching circuit for inductively coupled plasma source
    5.
    发明授权
    Impedance matching circuit for inductively coupled plasma source 失效
    用于电感耦合等离子体源的阻抗匹配电路

    公开(公告)号：US06770836B2

    公开(公告)日：2004-08-03

    申请号：US10100983

    申请日：2002-03-19

    申请人： Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

    发明人： Gi-Chung Kwon ,  Hong-Sik Byun ,  Sung-Weon Lee ,  Hong-Seub Kim ,  Sun-Seok Han ,  Bu-Jin Ko ,  Joung-Sik Kim

    IPC分类号： B23K1000

    CPC分类号： H01J37/321 ,  H01J37/32183 ,  H05H1/46

    摘要： An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

    摘要翻译： 一种用于等离子体源的阻抗匹配电路包括：第一网络，包括：第一线圈; 以及向所述第一线圈施加第一电压的RF电源; 和第二网络; 接地的第二线圈具有第二电压，第二电压低于第一电压; 第一和第二无功元件，第一和第二无功元件的一个端部分别连接到第二线圈的每个端部; 以及连接到第一和第二无功元件的另一端部的负载，负载的两个端部处的相位彼此不同。

    Method for manufacturing low voltage flash memory
    7.
    发明授权
    Method for manufacturing low voltage flash memory 失效
    制造低压闪存的方法

    公开(公告)号：US06927128B2

    公开(公告)日：2005-08-09

    申请号：US09947419

    申请日：2001-09-05

    申请人： Jung-Wook Shin ,  Jae-Seung Kim ,  Hong-Seub Kim

    发明人： Jung-Wook Shin ,  Jae-Seung Kim ,  Hong-Seub Kim

    IPC分类号： H01L27/115 ,  H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L29/788 ,  H01L21/425

    CPC分类号： H01L29/7883 ,  H01L21/28194 ,  H01L21/28273 ,  H01L29/518 ,  H01L29/66825 ,  H01L29/7882

    摘要： A memory comprises a gate oxide layer formed on a semiconductor substrate; an ion trap region formed in a corner portion of the gate oxide layer; a floating gate formed on the gate oxide layer; a dielectric layer formed on the floating gate; a control gate formed on the dielectric layer; a spacer provided along side walls of a formed gate; an LDD formed under the spacer on the semiconductor substrate, the LDD being doped at a low concentration with impurities; and a source/drain region formed on an element region of the semiconductor substrate contacting the LDD, the source/drain region being doped at a high concentration with impurities. In one embodiment, the ion trap region is formed by performing ion injection into a corner portion of the gate oxide after the gate, including the control gate and the floating gate, is formed.

    摘要翻译： 存储器包括形成在半导体衬底上的栅氧化层; 形成在栅极氧化物层的角部的离子阱区域; 形成在栅极氧化物层上的浮栅; 形成在浮动栅极上的电介质层; 形成在所述电介质层上的控制栅极; 沿着形成的门的侧壁设置的间隔件; 在半导体衬底上的间隔物之下形成的LDD，LDD以低浓度掺杂杂质; 以及源极/漏极区域，形成在与LDD接触的半导体衬底的元件区域上，源/漏区域以高浓度掺杂杂质。 在一个实施例中，在形成包括控制栅极和浮置栅极的栅极之后，通过对栅极氧化物的角部进行离子注入来形成离子阱区域。

    Method for manufacturing a radio frequency integrated circuit on epitaxial silicon
    8.
    发明授权
    Method for manufacturing a radio frequency integrated circuit on epitaxial silicon 失效
    外延硅制造射频集成电路的方法

    公开(公告)号：US06518141B2

    公开(公告)日：2003-02-11

    申请号：US09946935

    申请日：2001-09-04

    申请人： Kae-Hoon Lee ,  Jae-Seung Kim ,  Hong-Seub Kim

    发明人： Kae-Hoon Lee ,  Jae-Seung Kim ,  Hong-Seub Kim

    IPC分类号： H01L2136

    CPC分类号： H01L27/08 ,  H01L27/0617

    摘要： Disclosed are an RF integrated circuit and method for manufacturing the same. The RF integrated circuit comprises an insulating layer including a plurality of windows; epitaxial silicon layers separately formed on the insulating layer; semiconductor elements formed on the epitaxial silicon layers; a PMD layer formed on the epitaxial silicon layers and the insulating layer, and including contacts that connecting the semiconductor elements; a first metal wiring layer formed on the PMD layer; an IMD layer formed on the first metal wiring layer, and including vias connecting the first metal wiring layer; a second metal wiring layer formed on the IMD layer; and a capping layer formed on the second metal wiring layer.

    摘要翻译： 公开了一种RF集成电路及其制造方法。 RF集成电路包括包括多个窗口的绝缘层; 外延硅层分别形成在绝缘层上; 在外延硅层上形成的半导体元件; 形成在外延硅层和绝缘层上的PMD层，并且包括连接半导体元件的触点; 形成在PMD层上的第一金属布线层; 形成在第一金属布线层上的IMD层，并且包括连接第一金属布线层的通孔; 形成在IMD层上的第二金属布线层; 以及形成在所述第二金属布线层上的覆盖层。

    PLASMA GENERATING APPARATUS
    9.
    发明申请
    PLASMA GENERATING APPARATUS 审中-公开

    公开(公告)号：US20110005683A1

    公开(公告)日：2011-01-13

    申请号：US12519713

    申请日：2007-08-13

    申请人： Hong-Seub Kim

    发明人： Hong-Seub Kim

    IPC分类号： C23F1/08 ,  C23C16/00

    CPC分类号： H05H1/46 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32165 ,  H01J37/3244

    摘要： Provided is a plasma generating apparatus. The plasma generating apparatus includes a vacuum chamber, an ElectroStatic Chuck (ESC), an antenna unit, and an antenna cover. The vacuum chamber has a hollow interior and is sealed at a top. The ESC disposed at an internal center of the vacuum chamber receives an external bias Radio Frequency (RF). The antenna unit covers and seals the through-hole of an insulating vacuum plate. The antenna cover covers a top of the antenna unit and has a gas injection port.