公开(公告)号：US06696326B2

公开(公告)日：2004-02-24

申请号：US09832866

申请日：2001-04-12

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Yuugo Goto

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Yuugo Goto

IPC分类号： H01L2184

CPC分类号： H01L21/02052

摘要： In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.

摘要翻译： 在硅衬底的清洁方法和清洁装置中，在对具有硅表面的衬底进行湿清洗或蚀刻之后，在衬底的纯水冲洗之前或之后，将厚度为10至 通过用添加有氧化剂的纯水冲洗基材，在硅表面上形成30埃，然后将基材干燥。 由于在硅表面上形成氧化膜之后进行干燥，因此可以防止发生水痕。

公开(公告)号：US06235122B1

公开(公告)日：2001-05-22

申请号：US09103813

申请日：1998-06-24

申请人： Hongyong Zhang ,  Masayuki Sakakura ,  Yuugo Goto

发明人： Hongyong Zhang ,  Masayuki Sakakura ,  Yuugo Goto

IPC分类号： B08B308

CPC分类号： H01L21/02052

摘要： In a cleaning method and a cleaning apparatus of a silicon substrate, after wet cleaning or etching of the substrate having a silicon surface is carried out, and during or after a pure water rinse of the substrate, an oxide film with a thickness of 10 to 30 Å is formed on the silicon surface by rinsing the substrate by pure water added with an oxidizer, and then the substrate is dried. Since drying is carried out after the oxide film is formed on the silicon surface, the occurrence of a water mark can be prevented.

摘要翻译： 在硅衬底的清洁方法和清洁装置中，在对具有硅表面的衬底进行湿清洗或蚀刻之后，在衬底的纯水冲洗之前或之后，将厚度为10至 通过用添加有氧化剂的纯水冲洗基材，在硅表面上形成30埃，然后将基材干燥。 由于在硅表面上形成氧化膜之后进行干燥，因此可以防止发生水痕。

公开(公告)号：US5837619A

公开(公告)日：1998-11-17

申请号：US552678

申请日：1995-11-03

申请人： Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

发明人： Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/324

CPC分类号： H01L27/1214 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1262 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S438/974

摘要： Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film is formed, and a TFT is formed. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. This makes it easy to perform mask alignments. Furthermore, defects due to misalignment of masks are reduced, and the production yield is enhanced. In another method, a glass substrate made of Corning 7059 is also used as a substrate. The substrate is annealed above the strain point. Then, the substrate is rapidly cooled below the strain point. Thereafter, a bottom film is formed, and a TFT is fabricated. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. Thus, less cracks are created in the active layer of the TFT and in the bottom film. This improves the production yield. During heating of the substrate, it is held substantially horizontal to reduce warpage, distortions, and waviness of the substrate.

公开(公告)号：US5492843A

公开(公告)日：1996-02-20

申请号：US282598

申请日：1994-07-29

申请人： Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

发明人： Hiroki Adachi ,  Yuugo Goto ,  Hongyong Zhang ,  Toru Takayama

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L21/324

CPC分类号： H01L27/1214 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1262 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/016 ,  Y10S438/974

摘要： Method of fabricating a semiconductor device. A glass substrate such as Corning 7059 is used as a substrate. A bottom film is formed. Then, the substrate is annealed above the strain point of the glass substrate. The substrate is then slowly cooled below the strain point. Thereafter, a silicon film is formed, and a TFT is formed. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. This makes it easy to perform mask alignments. Furthermore, defects due to misalignment of masks are reduced, and the production yield is enhanced. In another method, a glass substrate made of Corning 7059 is also used as a substrate. The substrate is annealed above the strain point. Then, the substrate is rapidly cooled below the strain point. Thereafter, a bottom film is formed, and a TFT is fabricated. The aforementioned anneal and slow cooling reduce shrinkage of the substrate created in later thermal treatment steps. Thus, less cracks are created in the active layer of the TFT and in the bottom film. This improves the production yield. During heating of the substrate, it is held substantially horizontal to reduce warpage, distortions, and waviness of the substrate.

摘要翻译： 制造半导体器件的方法 使用诸如Corning 7059的玻璃基板作为基板。 形成底部薄膜。 然后，将基板在玻璃基板的应变点之上退火。 然后将基材缓慢冷却至应变点以下。 之后，形成硅膜，形成TFT。 上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。 这使得轻松执行掩模对齐。 此外，由于掩模的未对准而导致的缺陷减少，生产率提高。 在另一种方法中，还使用由Corning 7059制成的玻璃基板作为基板。 衬底在应变点之上退火。 然后，将基材快速冷却到应变点以下。 然后，形成底膜，制作TFT。 上述退火和缓慢冷却减少了后续热处理步骤中产生的基板的收缩。 因此，在TFT的有源层和底部膜中产生较少的裂纹。 这提高了产量。 在加热基材期间，其保持基本水平，以减少基材的翘曲，变形和波纹。

公开(公告)号：US6025607A

公开(公告)日：2000-02-15

申请号：US842301

申请日：1997-05-05

申请人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Yuugo Goto

发明人： Tatsuya Ohori ,  Michiko Takei ,  Hongyong Zhang ,  Yuugo Goto

IPC分类号： G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/266 ,  H01L21/336 ,  H01L29/786 ,  H01L31/0392

CPC分类号： H01L29/66757

摘要： A polysilicon pattern constituting an active portion of a TFT is formed on a substrate so as to be curved to generally assume a U shape, and a gate pattern is formed as a straight conductor pattern. The gate pattern is so disposed as to cross the U-shaped polysilicon pattern plural times. The silicon pattern comprise a plurality of channel regions and impurity regions of which alignment is symmetrical.

摘要翻译： 构成TFT的有源部分的多晶硅图案形成在基板上，以弯曲成大致呈U字状，并且栅极图案形成为直导体图案。 栅极图案被设置成多次跨越U形多晶硅图案。 硅图案包括多个通道区域和其对准的对称的杂质区域。

公开(公告)号：US09069215B2

公开(公告)日：2015-06-30

申请号：US12556135

申请日：2009-09-09

申请人： Yoshiharu Hirakata ,  Yuugo Goto ,  Yuko Kobayashi ,  Shunpei Yamazaki

发明人： Yoshiharu Hirakata ,  Yuugo Goto ,  Yuko Kobayashi ,  Shunpei Yamazaki

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  G02F1/1339 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1345

CPC分类号： G02F1/13394 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/133512 ,  G02F1/1341 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/133302 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/167 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78669 ,  H01L2029/7863 ,  H01L2924/0002 ,  Y10S438/924 ,  Y10S438/98 ,  H01L2924/00

摘要： There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.

公开(公告)号：US08674493B2

公开(公告)日：2014-03-18

申请号：US13618384

申请日：2012-09-14

申请人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

发明人： Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Mai Akiba

IPC分类号： H01L23/498

CPC分类号： G06K19/077 ,  G06K19/07703 ,  G06Q20/105 ,  G06Q20/3415 ,  G07F7/1008 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01005 ,  H01L2224/45147

摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.

摘要翻译： 本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。 一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

公开(公告)号：US08673739B2

公开(公告)日：2014-03-18

申请号：US13303519

申请日：2011-11-23

申请人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

发明人： Toru Takayama ,  Yuugo Goto ,  Yumiko Fukumoto ,  Junya Maruyama ,  Takuya Tsurume

IPC分类号： H01L21/30

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L33/0079

摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.

摘要翻译： 本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。 具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成 。 保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

公开(公告)号：US08634041B2

公开(公告)日：2014-01-21

申请号：US13466406

申请日：2012-05-08

申请人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Toru Takayama ,  Junya Maruyama ,  Yuugo Goto ,  Yumiko Ohno ,  Akio Endo ,  Yasuyuki Arai

IPC分类号： G02F1/1335

CPC分类号： G02F1/1362 ,  G02F1/133305 ,  G02F1/133603 ,  G02F2001/13613 ,  H01L27/14678 ,  H01L2221/68359 ,  H01L2221/68368 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592

摘要： To sophisticate a portable electronic appliance without hindering reduction of the weight and the size, more specifically, to sophisticate a liquid crystal display apparatus installed in a portable electronic appliance without hindering the mechanical strength, a liquid crystal display apparatus includes a first plastic substrate, a light-emitting device which is disposed over the first plastic substrate, resin which covers the light-emitting device, an insulating film which is in contact with the resin, a semiconductor device which is in contact with the insulating film, a liquid crystal cell which is electrically connected to the semiconductor device, and a second plastic substrate, wherein the semiconductor device and the liquid crystal cell are disposed between the first plastic substrate and the second plastic substrate.

摘要翻译： 为了使便携式电子设备复杂化而不妨碍重量和尺寸的减小，更具体地说，为了使安装在便携式电子设备中的液晶显示装置复杂化而不会妨碍机械强度，液晶显示装置包括第一塑料基板， 布置在第一塑料基板上的发光装置，覆盖发光装置的树脂，与树脂接触的绝缘膜，与绝缘膜接触的半导体装置，液晶单元， 电连接到半导体器件和第二塑料基板，其中半导体器件和液晶单元设置在第一塑料基板和第二塑料基板之间。

公开(公告)号：US08227851B2

公开(公告)日：2012-07-24

申请号：US12952766

申请日：2010-11-23

申请人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

发明人： Tomoyuki Aoki ,  Koji Dairiki ,  Yuugo Goto

IPC分类号： H01L27/112

CPC分类号： H01L27/13 ,  G06K19/07749 ,  H01L21/6835 ,  H01L23/5227 ,  H01L23/552 ,  H01L23/576 ,  H01L23/585 ,  H01L27/105 ,  H01L27/11509 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/1203 ,  H01L27/124 ,  H01L27/1266 ,  H01L29/78618 ,  H01L2221/6835 ,  H01L2221/68368 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/30105 ,  H01Q1/2208 ,  H01L2924/00

摘要： It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.

摘要翻译： 本发明的目的是提供可以保护消费者或商业产品持有人的隐私的半导体器件，并且即使当可以将交换数据而没有接触的半导体器件安装在商业产品上时，也可以根据使用来控制通信范围。 本发明的半导体器件包括在衬底上包括多个晶体管的元件组; 用作元件组上的天线的第一导电膜; 围绕所述第一导电膜的第二导电膜; 覆盖所述第一和第二端部的绝缘膜; 和绝缘膜上的第三导电膜。 第一导电膜设置为线圈形状，并且第一导电膜的每个端部连接到元件组。 第二导电膜的第一端部和第二端部彼此不连接。