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23 条记录 (耗时 0.027 秒)

    Metal gate structures and methods for forming thereof
    4.
    发明授权
    Metal gate structures and methods for forming thereof 有权
    金属门结构及其形成方法

    公开(公告)号：US08637390B2

    公开(公告)日：2014-01-28

    申请号：US13116794

    申请日：2011-05-26

    申请人： Seshadri Ganguli ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Hyoung-Chan Ha ,  Wei Ti Lee ,  Hoon Kim ,  Srinivas Gandikota ,  Yu Lei ,  Kevin Moraes ,  Xianmin Tang

    发明人： Seshadri Ganguli ,  Sang Ho Yu ,  Sang-Hyeob Lee ,  Hyoung-Chan Ha ,  Wei Ti Lee ,  Hoon Kim ,  Srinivas Gandikota ,  Yu Lei ,  Kevin Moraes ,  Xianmin Tang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/28079 ,  H01L21/28088 ,  H01L21/32051 ,  H01L29/49

    摘要： Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

    摘要翻译： 本文提供了金属门结构及其形成方法。 在一些实施例中，在具有形成在高k电介质层中的特征的衬底上形成金属栅极结构的方法可以包括在电介质层顶部的特征内沉积第一层; 在所述特征内在所述第一层顶部沉积包含钴或镍的第二层; 以及在第二层顶部沉积包括特征内的金属的第三层以填充该特征，其中第一层或第二层中的至少一层形成润湿层以形成后续沉积层的成核层，其中第一层 第二层或第三层形成功函数层，并且其中第三层形成栅电极。

    Aluminum sputtering while biasing wafer
    5.
    发明授权
    Aluminum sputtering while biasing wafer 失效
    铝溅射同时偏置晶圆

    公开(公告)号：US07378002B2

    公开(公告)日：2008-05-27

    申请号：US11209328

    申请日：2005-08-23

    申请人： Wei Ti Lee ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Ti Lee ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： C23C14/35 ,  H01L21/44

    CPC分类号： C23C14/185 ,  C23C14/025 ,  C23C14/046 ,  C23C14/345

    摘要： An aluminum sputtering process including RF biasing the wafer and a two-step aluminum fill process and apparatus used therefor to fill aluminum into a narrow via hole by sputtering under two distinctly different conditions, preferably in two different plasma sputter reactors. The first step includes sputtering a high fraction of ionized aluminum atoms onto a relatively cold wafer, e.g., held at less than 150° C., and relatively highly biased to attract aluminum atoms into the narrow holes and etch overhangs. The second step includes more neutral sputtering onto a relatively warm wafer, e.g. held at greater than 250° C., and substantially unbiased to provide a more isotropic and uniform aluminum flux. The magnetron scanned about the back of the aluminum target may be relatively small and unbalanced in the first step and relatively large and balanced in the second.

    摘要翻译： 一种铝溅射工艺，包括RF偏置晶片和两步铝填充工艺和装置，用于在两个明显不同的条件下，优选在两个不同的等离子体溅射反应器中通过溅射将铝填充到窄通孔中。 第一步包括将大部分电离铝原子溅射到相对冷的晶片上，例如保持在小于150℃，并且相当高的偏压以将铝原子吸引到窄孔中并蚀刻突出端。 第二步包括在相对温暖的晶片上的更中性的溅射，例如 保持在大于250℃，并且基本上无偏差以提供更多的各向同性和均匀的铝通量。 围绕铝靶的背面扫描的磁控管可能在第一步骤中相对较小并且不平衡，而在第二步中相对较大且平衡。

    Aluminum contact integration on cobalt silicide junction
    6.
    发明授权
    Aluminum contact integration on cobalt silicide junction 失效
    硅化钴接头上的铝接触集成

    公开(公告)号：US07867900B2

    公开(公告)日：2011-01-11

    申请号：US12240816

    申请日：2008-09-29

    申请人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    CVD-PVD deposition process
    10.
    发明授权
    CVD-PVD deposition process 有权
    CVD-PVD沉积工艺

    公开(公告)号：US06716733B2

    公开(公告)日：2004-04-06

    申请号：US10170128

    申请日：2002-06-11

    申请人： Wei Ti Lee ,  Ted Guo

    发明人： Wei Ti Lee ,  Ted Guo

    IPC分类号： H01L213205

    CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76882

    摘要： The present invention relates to a method for depositing metal layers on substrates with improved surface morphology. According to one aspect of the invention, a metal is deposited by chemical vapor deposition on a substrate having an aperture formed therein. A metal is then deposited on the substrate by physical vapor deposition performed with a low substrate temperature. The substrate is then heated. The substrate may then receive a metal deposited by physical vapor deposition performed at a high temperature and an additional heating step. The aperture of the resulting substrate is filled with metal and is substantially void-free and has a smooth surface morphology.

    摘要翻译： 本发明涉及一种在具有改进的表面形态的基底上沉积金属层的方法。 根据本发明的一个方面，通过化学气相沉积将金属沉积在其上形成有孔的基底上。 然后通过在低衬底温度下进行的物理气相沉积将金属沉积在衬底上。 然后将基材加热。 然后，基板可以接收通过在高温和附加加热步骤进行的物理气相沉积沉积的金属。 所得衬底的孔径被填充金属，并且基本上无空隙并且具有光滑的表面形态。