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    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    2.
    发明授权
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 失效
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US07030016B2

    公开(公告)日：2006-04-18

    申请号：US10812729

    申请日：2004-03-30

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层 - 过度填充沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    3.
    发明申请
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 失效
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US20050227479A1

    公开(公告)日：2005-10-13

    申请号：US10812729

    申请日：2004-03-30

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/311 ,  H01L21/768

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer-that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层 - 过度填充沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    5.
    发明授权
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US07432192B2

    公开(公告)日：2008-10-07

    申请号：US11347946

    申请日：2006-02-06

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Post ECP multi-step anneal/H2 treatment to reduce film impurity
    7.
    发明申请
    Post ECP multi-step anneal/H2 treatment to reduce film impurity 有权
    后期ECP多步退火/ H2处理以降低膜杂质

    公开(公告)号：US20060216930A1

    公开(公告)日：2006-09-28

    申请号：US11347946

    申请日：2006-02-06

    申请人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    发明人： Hsien-Ping Feng ,  Jung-Chih Tsao ,  Hsi-Kuei Cheng ,  Chih-Tsung Lee ,  Ming-Yuan Cheng ,  Steven Lin ,  Ray Chuang ,  Chi-Wen Liu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76877 ,  H01L21/2885

    摘要： A method of forming a copper interconnect in a dual damascene scheme is described. After a diffusion barrier layer and seed layer are sequentially formed on the sidewalls and bottoms of a trench and via in a dielectric layer, a first copper layer is deposited by a first ECP process at a 10 mA/cm2 current density to fill the via and part of the trench. A first anneal step is performed to remove carbon impurities and optionally includes a H2 plasma treatment. A second ECP process with a first deposition step at a 40 mA/cm2 current density and second deposition step at a 60 mA/cm2 current density is used to deposit a second copper layer that overfills the trench. After a second anneal step, a CMP process planarizes the copper layers. Fewer copper defects, reduced S, Cl, and C impurities, and improved Rc performance are achieved by this method.

    摘要翻译： 描述了在双镶嵌方案中形成铜互连的方法。 在扩散阻挡层和种子层依次形成在电介质层中的沟槽和通孔的侧壁和底部上之后，通过第一ECP工艺以10mA / cm 2 / >电流密度以填充通孔和部分沟槽。 进行第一退火步骤以除去碳杂质，并且任选地包括H 2 O 3等离子体处理。 使用在40mA / cm 2电流密度下的第一沉积步骤和以60mA / cm 2电流密度进行第二沉积步骤的第二个ECP工艺来沉积 第二铜层超过沟槽。 在第二退火步骤之后，CMP工艺使铜层平坦化。 通过该方法可以实现更少的铜缺陷，降低的S，Cl和C杂质，以及Rc性能的提高。

    Method of reducing oxygen content in ECP solution
    8.
    发明申请
    Method of reducing oxygen content in ECP solution 审中-公开
    降低ECP溶液中氧含量的方法

    公开(公告)号：US20080067076A1

    公开(公告)日：2008-03-20

    申请号：US11523135

    申请日：2006-09-19

    申请人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

    发明人： Ming-Yuan Cheng ,  Hsien-Ping Feng ,  Hsi-Kuei Cheng ,  Kei-Wei Chen ,  Jung-Chin Tsao ,  Steven Lin ,  Ray Chuang

    IPC分类号： C25D3/00

    CPC分类号： C25D3/02 ,  C02F3/34

    摘要： A novel method, which is suitable to substantially reduce the presence of oxygen micro-bubbles in an electroplating bath solution, is disclosed. The method includes the addition of aerobic bacteria to the electroplating bath solution to consume oxygen in the solution. Reduction of the oxygen content in the electroplating bath solution prevents oxygen micro-bubbles from forming in the solution and becoming trapped between the solution and the surface of a metal seed layer on a substrate to block the electroplating of a metal film onto the seed layer. Consequently, the presence of surface pits and other structural defects in the surface of the electroplated metal film is substantially reduced.

    摘要翻译： 公开了一种适合于显着减少电镀浴液中氧微气泡存在的新方法。 该方法包括向电镀浴溶液中加入需氧细菌以消耗溶液中的氧气。 电镀浴溶液中的氧含量的降低防止溶液中形成氧微气泡并被困在溶液与基底上的金属种子层的表面之间，以阻止金属膜在种子层上的电镀。 因此，电镀金属膜的表面中存在表面凹坑等结构缺陷。

    Tactile sensing array and manufacturing method thereof
    10.
    发明授权
    Tactile sensing array and manufacturing method thereof 有权
    触觉传感阵列及其制造方法

    公开(公告)号：US07926366B2

    公开(公告)日：2011-04-19

    申请号：US12476248

    申请日：2009-06-01

    申请人： Yao-Joe Yang ,  Ming-Yuan Cheng ,  Chen-Mo Taso

    发明人： Yao-Joe Yang ,  Ming-Yuan Cheng ,  Chen-Mo Taso

    IPC分类号： G01D7/00

    CPC分类号： G01D5/25 ,  Y10T29/49007 ,  Y10T29/49117

    摘要： In a tactile sensing array and its manufacturing method, the tactile sensing array includes first and second electrodes at different layers, conductors provided for cladding intersection positions of the first and second electrodes, and a cladding layer for cladding the first and second electrodes and conductors. Each of the first and second electrodes is a spiral conducting wire wound onto an elastic wire. During manufacture, a cladding layer solution is injected into a mold; first electrodes are installed in rows and apart, and each first electrode includes conductor solution drops; second electrodes are installed at the conductor solution drops; a cladding layer solution is injected again; and vacuum, heating and demolding process are performed. The invention has the effects of high extensibility, high elasticity and low manufacturing cost and prevents damages caused by high deformation when the tactile sensing array is used and covered onto a complicated surface.

    摘要翻译： 在触觉感测阵列及其制造方法中，触觉感测阵列包括不同层的第一和第二电极，用于包覆第一和第二电极的交叉位置的导体，以及用于包覆第一和第二电极和导体的包覆层。 第一和第二电极中的每一个是缠绕在弹性线上的螺旋导电线。 在制造过程中，将包覆层溶液注入模具中; 第一电极以行分开安装，并且每个第一电极包括导体溶液滴; 第二电极安装在导体溶液滴下; 再次注入包覆层溶液; 并执行真空，加热和脱模过程。 本发明具有高延展性，高弹性和低制造成本的效果，并且当使用触觉感测阵列并覆盖在复杂表面上时，防止由高变形引起的损伤。