摘要:
An image device includes a substrate in which a light receiving element is formed, an interlayer dielectric structure which is formed on the substrate and has a cavity over the light receiving element, a transparent dielectric layer which fills the cavity and has a lens-shaped portion protruding beyond an upper portion of the interlayer dielectric structure, and a color filter which is formed on the transparent dielectric layer.
摘要:
A display device includes a plurality of pixels arranged in matrix, a plurality of gate lines, a plurality of data lines, and a gate driver connected to the plurality of gate lines. The gate driver receives a first scan start signal, a second scan start signal and clock signals and outputs a gate-on voltage to each of the plurality of gate lines. The gate driver outputs the gate-on voltage to the plurality of gate lines such that the gate-on voltages do not overlap with each other when the gate driver receives the first scan start signal. The gate driver outputs the gate-on voltage to at least two of the gate lines at substantially the same time when the gate driver receives the second scan start signal.
摘要:
Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.
摘要:
A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.
摘要:
A film sheet for area-focusing of sunlight and a greenhouse provided with the same are provided. A film sheet includes i) a film having a rectangular shape, and ii) a plurality of prism assemblies formed on one surface of the film to extend in one direction. At least one prism assembly of the plurality of prism assemblies includes i) at least one first prism unit including a plurality of first prisms with slanted angles that are substantially the same as each other, and ii) at least one second prism unit neighboring the first prism unit and including a plurality of second prisms with slanted angles that are substantially the same as each other. The width of the first prism unit is substantially the same as the width of the second prism unit and a slanted angle of one first prism among the plurality of first prisms is different from a slanted angle of one second prism among the plurality of second prisms, and light entering the prism assembly is configured to be area-focused.
摘要:
Provided is a power amplifier device. The power amplifier device includes: a cutoff unit cutting off a direct current (DC) component of a signal delivered from a signal input terminal; a circuit protecting unit connected to the cutoff unit and stabilizing a signal delivered from the cutoff unit; and an amplification unit connected to the circuit protecting unit and amplifying a signal delivered from the circuit protecting unit, wherein the amplification unit comprises a plurality of transistors connected in parallel to the circuit protecting unit and the circuit protecting unit comprises resistors connected to between bases of the plurality of transistors.
摘要:
The present invention relates to the information protection of digital content transferred by streaming and download service through wire or wireless Internet network. The information protection system in this invention suggests a drastic prevention method of copyrights infringement such as illegal copy and unauthorized distribution of digital content, by using of the encryption, decryption, distribution, and authentication technologies. This invention suggests the control technology of general viewer program, not the specific viewer program for information protection, using a network filter driver for streaming and file system filter driver for download service. The main function of network and file system filter driver is the filtering operation such as a hooking, changing, decrypting, and restoring of message and data packet, and transferring to the viewer program. The main idea and technology of this invention suggest higher secure and efficient digital information protection system for live/VOD/HTTP streaming and download service.
摘要:
Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.
摘要:
Disclosed are a semiconductor device including a stepped gate electrode and a method of fabricating the semiconductor device. The semiconductor device according to an exemplary embodiment of the present disclosure includes: a semiconductor substrate having a structure including a plurality of epitaxial layers and including an under-cut region formed in a part of a Schottky layer in an upper most part thereof; a cap layer, a first nitride layer and a second nitride layer sequentially formed on the semiconductor substrate to form a stepped gate insulating layer pattern; and a stepped gate electrode formed by depositing a heat-resistant metal through the gate insulating layer pattern, wherein the under-cut region includes an air-cavity formed between the gate electrode and the Schottky layer.
摘要:
A liquid crystal display (LCD) module and a display system including the LCD module are provided. The LCD module includes a common-voltage adjustment unit which is enabled by interfacing with an external device and thus adjusts a common voltage; a signal control unit which outputs a first reverse signal that reverses the polarity of a voltage at intervals of at least two frames; and a data driving unit which reverses the polarity of an image data voltage with respect to the common voltage at intervals of at least two frames in response to the first reverse signal.