摘要:
An inductor for a system-on-a-chip and a method for manufacturing the inductor are disclosed. The inductor comprises a conductive line formed by connecting a plurality of conductive patterns grown from a seed layer formed on a lower wiring. The method comprises using an electrolytic plating process or an electroless plating process to grow the plurality of adjacent conductive patterns from the seed layer until they become connected. The method also enables adjusting the height and width of the conductive line to desired levels.
摘要:
An inductor for a system-on-a-chip and a method for manufacturing the inductor are disclosed. The inductor comprises a conductive line formed by connecting a plurality of conductive patterns grown from a seed layer formed on a lower wiring. The method comprises using an electrolytic plating process or an electroless plating process to grow the plurality of adjacent conductive patterns from the seed layer until they become connected. The method also enables adjusting the height and width of the conductive line to desired levels.
摘要:
A method of forming a metal pattern using a selective electroplating process is provided. First, a dielectric layer is formed on an underlying layer. Then, a trench defining blanket region is formed by patterning the dielectric layer. A diffusion barrier layer is conformally formed in the trench and on the blanket region. A polishing/plating stop layer and an upper seed layer are conformally formed on the diffusion barrier layer in a successive manner. The polishing/plating layer in the blanket region is exposed by selectively removing the upper seed layer in the blanket region, and, at the same time, a seed layer pattern remaining in the trenches is formed. An upper conductive layer is formed to fill the trench surrounded by the seed layer pattern using an electroplating process. Then, the dielectric layer in the blanket region is exposed by planarizing the upper conductive layer, the polishing/plating stop layer, the seed layer pattern, and the diffusion barrier layer.
摘要:
A method of forming a metal pattern using a selective electroplating process is provided. First, a dielectric layer is formed on an underlying layer. Then, a trench defining blanket region is formed by patterning the dielectric layer. A diffusion barrier layer is conformally formed in the trench and on the blanket region. A polishing/plating stop layer and an upper seed layer are conformally formed on the diffusion barrier layer in a successive manner. The polishing/plating layer in the blanket region is exposed by selectively removing the upper seed layer in the blanket region, and, at the same time, a seed layer pattern remaining in the trenches is formed. An upper conductive layer is formed to fill the trench surrounded by the seed layer pattern using an electroplating process. Then, the dielectric layer in the blanket region is exposed by planarizing the upper conductive layer, the polishing/plating stop layer, the seed layer pattern, and the diffusion barrier layer.
摘要:
The present invention relates to a composition comprising a Ninjurin 1 expression or activity inhibitor for the prevention and treatment of inflammatory disease. Ninjurin 1 protein is specifically expressed in macrophages around blood vessels, increases cell-cell adhesion and cell-matrix adhesion, increases expressions of Wnt7b (Wingless-type MMTV integration site family, member 7B) and Ang2 (angiopoietin-2), but reduces expression of Ang1 to induce apoptosis of vascular endothelial cells. In addition, Ninjurin 1 protein is up-regulated when inflammation is induced and induces iNOS expression as well as increased NO generation. Therefore, the Ninjurin 1 protein expression or activation inhibitor can be effectively used as an active ingredient of a composition for the prevention and treatment of inflammatory disease.
摘要:
A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.
摘要:
A method of chemical mechanical polishing that polishes a substrate by abrading a target material formed on the substrate with a polishing pad containing a slurry includes setting a polishing end time, at which time a predetermined thickness of the target material will have been removed from the substrate by polishing, polishing the substrate to remove the predetermined thickness of the target material, and increasing a level of byproduct contamination in the polishing pad to decrease a polishing rate, while polishing the substrate, so that the polishing rate decreases to approximately zero at the polishing end time.
摘要:
Provided with a dielectric ceramic composition for microwaves having the formula represented by yMgTa.sub.2-x O.sub.6-5/2x +(1-y)ZnNb.sub.2 O.sub.6 +wC, wherein 0
摘要:
A selective copper alloy interconnection in a semiconductor device is provided. The interconnection includes a substrate, a dielectric formed on the substrate, and a first interconnection formed in the dielectric. The first interconnection has a first pure copper pattern. In addition, a second interconnection having a larger width than the first interconnection is formed in the dielectric. The second interconnection has a copper alloy pattern. The copper alloy pattern may be an alloy layer formed of copper (Cu) and an additive material. A method of forming the selective copper alloy pattern is also provided.
摘要:
Disclosed is a wireless transmitting and receiving antenna which comprises a bobbin made of insulation material and having a first penetration cavity in the center of the bobbin in a lengthwise direction; a first antenna comprising a helical conductor spirally wound on the bobbin and having a resonance frequency, and a matching bar inserted into the cavity of the bobbin, made of a conductor and providing a second penetration cavity in the direction identical with that of the first penetration cavity; a feeder positioned at one part of the bobbin so as to supply signals to the helical conductor; and a second antenna comprising: a rod inserted into the penetration cavities of the bobbin and the matching bar, moving between the penetration cavities in a slipping manner, and wrapped with the insulation material; a conduction material combined to the outer part of the rod, and electrically connecting the feeder and the helical conductor when the rod is inserted into the penetration cavities; and a stopper which is made of a conductor, positioned at the lower part of the rod, and when the rod. is drawn Afro, the penetration cavity, the moving of the stopper is limited, and it is contacted to the feeder so as to supply signals to the rod.