公开(公告)号：US20100252094A1

公开(公告)日：2010-10-07

申请号：US12676734

申请日：2008-07-31

Applicant: Hyun Soo Kim ,  Won Seok Han ,  Byung Seok Choi ,  Dae Kon Oh

Inventor： Hyun Soo Kim ,  Won Seok Han ,  Byung Seok Choi ,  Dae Kon Oh

IPC: H01L31/00 ,  H01L31/18

CPC classification number: H01L31/068 ,  H01L31/022425 ,  H01L31/02245 ,  H01L31/0547 ,  Y02E10/52 ,  Y02E10/547

Abstract: Provided are a high-efficiency solar cell, which converts light energy of incident light into electrical energy, and a method of manufacturing the same. An upper ohmic layer is formed at a predetermined tilt angle less than 45° and an ohmic electrode is deposited on the upper ohmic layer so as to reduce shadow loss due to the ohmic electrode and lessen contact resistance.

Abstract translation: 提供了将入射光的光能转换为电能的高效率太阳能电池及其制造方法。 以小于45°的预定倾斜角度形成上欧姆层，并且在上欧姆层上沉积欧姆电极，以减少由于欧姆电极引起的阴影损失并降低接触电阻。

公开(公告)号：US07369595B2

公开(公告)日：2008-05-06

申请号：US11544832

申请日：2006-10-05

Applicant: Ki Soo Kim ,  Won Seok Han ,  Sung Bock Kim ,  Dae Kon Oh

Inventor： Ki Soo Kim ,  Won Seok Han ,  Sung Bock Kim ,  Dae Kon Oh

IPC: H01S5/00 ,  H01S3/08

CPC classification number: H01S5/183 ,  B82Y20/00 ,  H01S5/34306

Abstract: A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.

Abstract translation: 提供VCSEL二极管中的DBR结构，制造DBR结构的方法和VCSEL二极管。 VCSEL二极管中的DBR结构包括：具有预定折射率并设置在InP衬底上的InAlGaAs层; 第一InAlAs层，其折射率低于InAlGaAs层并且设置在InAlGaAs层上; InP层，其折射率低于InAlGaAs层并且设置在第一InAlAs层上; 和具有比InAlGaAs层低的折射率的第二InAlAs层并且设置在InP层上。 因此，DBR结构可以减少在InAlGaAs层和InP层之间的结上的II型带阵列引起的光损耗，从而提高器件特性。

公开(公告)号：US09353437B2

公开(公告)日：2016-05-31

申请号：US13885740

申请日：2011-11-17

Applicant: Won Seok Han

Inventor： Won Seok Han

IPC: C23C16/18 ,  C07F13/00 ,  C07F15/04 ,  C07F15/06 ,  C23C16/06 ,  C23C16/40

CPC classification number: C23C16/18 ,  C07F13/005 ,  C07F15/045 ,  C07F15/065 ,  C23C16/06 ,  C23C16/406

Abstract: The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.

Abstract translation: 本发明涉及基于二亚甲基二（DAD）的金属化合物及其制备方法以及使用其制备薄膜的方法。 本发明的二氮二烯（DAD）类金属化合物以气态提供，通过化学气相沉积或原子层沉积形成金属薄膜或金属氧化物薄膜。 特别地，本发明的二硫化二烯类有机金属化合物具有以下优点：其可以形成为金属薄膜或金属氧化物薄膜，并且可以以相对便宜的方式制备而不使用高毒性配体。

公开(公告)号：US20070134926A1

公开(公告)日：2007-06-14

申请号：US11635223

申请日：2006-12-07

Applicant: O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

Inventor： O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Hyun Woo Song

IPC: H01L21/302

CPC classification number: H01L21/30621 ,  H01S5/183 ,  H01S5/2081

Abstract: Provided are an etching method for a multi-layered structure of semiconductors in groups III-V and a method of manufacturing a VCSEL using the etching method. According to the etching method, a stacked structure including a first semiconductor layer and a second semiconductor layer is exposed to a plasma of a mixture consisting of Cl2, Ar, CH4, and H2 to etch the stacked structure, so that a mirror layer of the VCSEL is formed. The first semiconductor layer is formed of a semiconductor in groups III-V and the second semiconductor layer is formed of a semiconductor in groups III-V, other than the semiconductor of the first semiconductor layer. At least part of a lower mirror layer, a lower electrode layer, an optical gain layer, an upper electrode layer, and an upper mirror layer is etched using one time of an etching process, so that a clean and smooth etched surface is obtained.

Abstract translation: 提供了III-V族半导体的多层结构的蚀刻方法和使用该蚀刻方法制造VCSEL的方法。 根据蚀刻方法，将包括第一半导体层和第二半导体层的堆叠结构暴露于由Cl 2，Ar，CH 4， 和H 2 N以蚀刻堆叠结构，从而形成VCSEL的镜层。 第一半导体层由III-V族的半导体形成，第二半导体层由除了第一半导体层的半导体之外的III-V族的半导体形成。 使用一次蚀刻工艺蚀刻下镜面层，下电极层，光增益层，上电极层和上镜层的至少一部分，从而获得清洁且光滑的蚀刻表面。

公开(公告)号：US06727109B2

公开(公告)日：2004-04-27

申请号：US10210668

申请日：2002-07-31

Applicant: Young Gu Ju ,  Won Seok Han ,  O Kyun Kwon ,  Jae Heon Shin ,  Byueng Su Yoo ,  Jung Rae Ro

Inventor： Young Gu Ju ,  Won Seok Han ,  O Kyun Kwon ,  Jae Heon Shin ,  Byueng Su Yoo ,  Jung Rae Ro

IPC: H01L2100

CPC classification number: H01S5/18308 ,  H01L33/145 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2063

Abstract: The present invention relates to a method of fabricating vertical-cavity surface emitting lasers being watched as a light source for long wavelength communication. The present invention includes forming a layer having a high resistance near the surface by implanting heavy ions such as silicon (Si), so that the minimum current injection diameter is made very smaller unlike implantation of a proton. Further, the present invention includes regrowing crystal so that current can flow the epi surface in parallel to significantly reduce the resistance up to the current injection part formed by silicon (Si) ions. Therefore, the present invention can not only effectively reduce the current injection diameter but also significantly reduce the resistance of a device to reduce generation of a heat. Further, the present invention can further improve dispersion of a heat using InP upon regrowth and thus improve the entire performance of the device.

Abstract translation: 本发明涉及一种垂直腔表面发射激光器的制造方法，该激光器被视为用于长波长通信的光源。 本发明包括通过注入诸如硅（Si）的重离子在表面附近形成具有高电阻的层，使得最小电流注入直径不像植入质子那样非常小。 此外，本发明包括再生晶体，使得电流可以平行地流动外延表面，以显着降低直到由硅（Si）离子形成的电流注入部分的电阻。 因此，本发明不仅可以有效地降低电流注入直径，而且可以显着降低器件的电阻以减少发热。 此外，本发明可以进一步改善在再生后使用InP的散热分散，从而提高装置的整体性能。

公开(公告)号：US06989312B2

公开(公告)日：2006-01-24

申请号：US10800680

申请日：2004-03-16

Applicant: Hyun Woo Song ,  Won Seok Han ,  Jong Hee Kim ,  Young Gu Ju ,  O Kyun Kwon ,  Sang Hee Park

Inventor： Hyun Woo Song ,  Won Seok Han ,  Jong Hee Kim ,  Young Gu Ju ,  O Kyun Kwon ,  Sang Hee Park

IPC: H01L21/20

CPC classification number: H01S5/18341 ,  H01S5/02461 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/18363

Abstract: Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type of semiconductor layers is selectively etched to form an air-gap structure, and an oxide or a nitride having a good heat transfer property is deposited so that the air gap is buried, whereby it is possible to effectively implement the semiconductor reflector or the optical filter having a high reflectance in a small period because of the large index contrast between the oxide or the nitride buried in the air gap and the semiconductor layer.

Abstract translation: 提供一种制造半导体光学器件的方法，该半导体光学器件可以用作反射半导体镜或光学滤波器，其中具有不同蚀刻速率的两种或更多种类型的半导体层被交替堆叠，至少一种类型的半导体层是选择性的 蚀刻以形成气隙结构，并且沉积具有良好传热特性的氧化物或氮化物，从而使气隙被埋入，由此可以有效地实现具有高反射率的半导体反射器或滤光器 这是由于在空气间隙和半导体层中埋入的氧化物或氮化物之间的大的折射率造成的对比度小的周期。

公开(公告)号：US20120103418A1

公开(公告)日：2012-05-03

申请号：US13207825

申请日：2011-08-11

Applicant: Yong-Duck CHUNG ,  Won Seok Han

Inventor： Yong-Duck CHUNG ,  Won Seok Han

IPC: H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/02168 ,  H01L31/03923 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract translation: 提供了一种单结型CIGS薄膜太阳能电池，其包括使用单一结制造的CIGS光吸收层。 单结型CIGS薄膜太阳能电池包括基板，沉积在基板上的背面接触层，沉积在背面接触上的光吸收层，包括P型CIGS层和耦合到P型CIGS层的N型CIGS层 使用单结，以及沉积在光吸收层上的防反射膜。

公开(公告)号：US20100319777A1

公开(公告)日：2010-12-23

申请号：US12604450

申请日：2009-10-23

Applicant: Sung-Bum BAE ,  Yong-Duck Chung ,  Won Seok Han ,  Dae-Hyung Cho ,  Je Ha Kim

Inventor： Sung-Bum BAE ,  Yong-Duck Chung ,  Won Seok Han ,  Dae-Hyung Cho ,  Je Ha Kim

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L31/0392 ,  H01L31/03923 ,  H01L31/03925 ,  H01L31/072 ,  Y02E10/52 ,  Y02E10/541 ,  Y02P70/521

Abstract: A solar cell and method of fabricating the same are provided. The solar cell includes a metal electrode layer, an optical absorption layer, a buffer layer, and a transparent electrode layer. The metal electrode layer is disposed on a substrate. The optical absorption layer is disposed on the metal electrode layer. The buffer layer is disposed on the optical absorption layer and includes an indium gallium nitride (InxGa1-xN). The transparent electrode layer is disposed on the buffer layer.

Abstract translation: 提供了一种太阳能电池及其制造方法。 太阳能电池包括金属电极层，光吸收层，缓冲层和透明电极层。 金属电极层设置在基板上。 光吸收层设置在金属电极层上。 缓冲层设置在光吸收层上并包括氮化铟镓（In x Ga 1-x N）。 透明电极层设置在缓冲层上。

公开(公告)号：US20060126694A1

公开(公告)日：2006-06-15

申请号：US11179954

申请日：2005-07-12

Applicant: O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Jong Hee Kim ,  Hyun Woo Song

Inventor： O. Kyun Kwon ,  Mi Ran Park ,  Won Seok Han ,  Jong Hee Kim ,  Hyun Woo Song

IPC: H01S5/00

CPC classification number: H01S5/18316 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/18369 ,  H01S5/18375 ,  H01S5/18377

Abstract: Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics.

Abstract translation: 提供了一种在半导体光学器件中制造垂直腔表面发射激光器的方法，包括：将介质镜层结合到具有镜层和有源层的外延结构; 使用金属键合方法将它们结合在新的基板上; 去除现有的基板; 并在新基板上制造垂直腔表面发射激光器。 垂直腔表面发射激光器的制造方法是通过使用外部金属接合方法将垂直空腔表面发射激光器移动并附着到新的衬底而进行的，而不会电和影响上镜和下反射镜以及构成垂直腔的表面发射激光的有源层 腔表面发射激光。 在使用制造垂直腔表面发射激光器的现有方法的同时，通过移动到具有良好热特性的新衬底来制造VCSEL，从而实现良好的发热特性，从而有助于制造具有高可靠性的垂直腔表面发射激光器 和良好的特点。

公开(公告)号：US08637765B2

公开(公告)日：2014-01-28

申请号：US13207825

申请日：2011-08-11

Applicant: Yong-Duck Chung ,  Won Seok Han

Inventor： Yong-Duck Chung ,  Won Seok Han

IPC: H01L21/00 ,  H01L23/00 ,  H01L25/00 ,  H01L27/00 ,  H01L27/14

CPC classification number: H01L31/0322 ,  H01L31/02168 ,  H01L31/03923 ,  H01L31/068 ,  Y02E10/541 ,  Y02E10/547 ,  Y02P70/521

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract translation: 提供了一种单结型CIGS薄膜太阳能电池，其包括使用单一结制造的CIGS光吸收层。 单结型CIGS薄膜太阳能电池包括基板，沉积在基板上的背面接触层，沉积在背面接触上的光吸收层，包括P型CIGS层和耦合到P型CIGS层的N型CIGS层 使用单结，以及沉积在光吸收层上的防反射膜。