公开(公告)号：US20070072433A1

公开(公告)日：2007-03-29

申请号：US11237477

申请日：2005-09-27

申请人： Hyungsuk Yoon ,  John Boyd ,  Andras Kuthi

发明人： Hyungsuk Yoon ,  John Boyd ,  Andras Kuthi

IPC分类号： H01L21/302 ,  G03C1/00 ,  H01L21/461

CPC分类号： H01L21/02087 ,  B08B7/0035

摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

摘要翻译： 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

公开(公告)号：US07909934B2

公开(公告)日：2011-03-22

申请号：US11217523

申请日：2005-08-31

申请人： John Boyd ,  Andras Kuthi ,  Michael G. R. Smith ,  Thomas W. Anderson ,  William Thie

发明人： John Boyd ,  Andras Kuthi ,  Michael G. R. Smith ,  Thomas W. Anderson ,  William Thie

IPC分类号： B08B7/00 ,  B08B7/04

CPC分类号： H01L21/67253 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  B08B3/12 ,  H01L21/67057 ,  Y10S134/902

摘要： A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer.

摘要翻译： 清洁衬底的系统和方法包括包括换能器和衬底的兆声波室。 换能器朝向基板。 可变距离d分离换能器和基板。 该系统还包括具有耦合到换能器的输出的动态可调的RF发生器。

公开(公告)号：US06995067B2

公开(公告)日：2006-02-07

申请号：US10360322

申请日：2003-02-06

申请人： John Boyd ,  Andras Kuthi ,  Michael G. R. Smith ,  Thomas W. Anderson ,  William Thie

发明人： John Boyd ,  Andras Kuthi ,  Michael G. R. Smith ,  Thomas W. Anderson ,  William Thie

IPC分类号： H01L21/336 ,  H01L21/42 ,  G01R31/26

CPC分类号： H01L21/67253 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  B08B3/12 ,  H01L21/67057 ,  Y10S134/902

摘要： A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer.

摘要翻译： 清洁衬底的系统和方法包括包括换能器和衬底的兆声波室。 换能器朝向基板。 可变距离d分离换能器和基板。 该系统还包括具有耦合到换能器的输出的动态可调的RF发生器。

公开(公告)号：US20100181025A1

公开(公告)日：2010-07-22

申请号：US12750612

申请日：2010-03-30

申请人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC分类号： C23F1/08

CPC分类号： H01L21/02087 ,  B08B7/0035

摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

摘要翻译： 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

公开(公告)号：US08926789B2

公开(公告)日：2015-01-06

申请号：US12750612

申请日：2010-03-30

申请人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01L21/02 ,  B08B7/00

CPC分类号： H01L21/02087 ,  B08B7/0035

摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

摘要翻译： 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

公开(公告)号：US07691278B2

公开(公告)日：2010-04-06

申请号：US11237477

申请日：2005-09-27

申请人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC分类号： H01L21/302

CPC分类号： H01L21/02087 ,  B08B7/0035

摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

摘要翻译： 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一金属丝网被第一介电层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

公开(公告)号：US20060000487A1

公开(公告)日：2006-01-05

申请号：US11217523

申请日：2005-08-31

申请人： John Boyd ,  Andras Kuthi ,  Michael Smith ,  Thomas Anderson ,  William Thie

发明人： John Boyd ,  Andras Kuthi ,  Michael Smith ,  Thomas Anderson ,  William Thie

IPC分类号： B08B3/12

CPC分类号： H01L21/67253 ,  B06B1/0253 ,  B06B2201/71 ,  B08B3/10 ,  B08B3/12 ,  H01L21/67057 ,  Y10S134/902

摘要： A system and method of cleaning a substrate includes a megasonic chamber that includes a transducer and a substrate. The transducer is being oriented toward the substrate. A variable distance d separates the transducer and the substrate. The system also includes a dynamically adjustable RF generator that has an output coupled to the transducer.

摘要翻译： 清洁衬底的系统和方法包括包括换能器和衬底的兆声波室。 换能器朝向基板。 可变距离d分离换能器和基板。 该系统还包括具有耦合到换能器的输出的动态可调的RF发生器。

公开(公告)号：US20120269987A1

公开(公告)日：2012-10-25

申请号：US13534366

申请日：2012-06-27

申请人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

发明人： Yezdi Dordi ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  William Thie ,  Arthur M. Howald

IPC分类号： C23C18/54 ,  C23C16/06 ,  B05D5/12

CPC分类号： H01L21/7685 ,  C23C18/1632 ,  C23C18/1651 ,  C23C18/1844 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76871 ,  H01L21/76879

摘要： An integrated system for processing a substrate in controlled environment to enable deposition of a thin copper seed layer on a surface of a metallic barrier layer of a copper interconnect is provided. The system includes a lab-ambient transfer chamber, a vacuum transfer chamber, a vacuum process module for cleaning an exposed surface of a metal oxide of a underlying metal, a vacuum process module for depositing the metallic barrier layer, and a controlled-ambient transfer chamber filled with an inert gas, wherein at least one controlled-ambient process module is coupled to the controlled-ambient transfer chamber. In addition, the system includes an electroless copper deposition process module used to deposit the thin layer of copper seed layer on the surface of the metallic barrier layer.

摘要翻译： 提供了一种用于在受控环境中处理衬底以使薄铜种子层在铜互连的金属阻挡层的表面上沉积的集成系统。 该系统包括实验室环境转移室，真空转移室，用于清洁下面金属的金属氧化物的暴露表面的真空处理模块，用于沉积金属阻挡层的真空处理模块和受控环境转移 室内装有惰性气体，其中至少一个受控环境的过程模块耦合到受控环境的传送室。 此外，该系统包括用于在金属阻挡层的表面上沉积铜籽晶层的薄层的无电铜沉积工艺模块。

公开(公告)号：US07875554B2

公开(公告)日：2011-01-25

申请号：US12044537

申请日：2008-03-07

申请人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

发明人： Yezdi Dordi ,  John Boyd ,  William Thie ,  Bob Maraschin ,  Fred C. Redeker ,  Joel M. Cook

IPC分类号： H01L21/44

CPC分类号： C23C18/1612 ,  C23C18/14 ,  C23C18/161 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1667 ,  C23C18/168 ,  C23C18/31 ,  H01L21/288

摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.

摘要翻译： 概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。 更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。 通过向晶片表面施加辐射能来提供选择性加热。 晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。 界面处的温度升高又导致在晶片表面发生电镀反应。 因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

公开(公告)号：US07749893B2

公开(公告)日：2010-07-06

申请号：US11641361

申请日：2006-12-18

申请人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： Fritz Redeker ,  John Boyd ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L21/4763

CPC分类号： C25D7/123 ,  C23C18/1653 ,  C23C28/023 ,  C23C28/322 ,  C23C28/34 ,  C23C28/341 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.

摘要翻译： 本发明涉及用于半导体器件金属化的方法和系统。 本发明的一个方面是将铜层沉积在阻挡层上以在其间产生基本上无氧的界面的方法。 在一个实施例中，该方法包括提供阻挡层的基本上无氧化物的表面。 该方法还包括在阻挡层的无氧化物表面上沉积一定量的原子层沉积（ALD）铜，以有效地防止阻挡层的氧化。 该方法还包括在ALD铜上沉积间隙填充铜层。 本发明的另一方面是一种用于在阻挡层上沉积铜层以在其间产生基本上无氧的界面的系统。 在一个实施例中，集成系统包括至少一个阻挡层沉积模块。 该系统还包括配置为通过原子层沉积沉积铜的ALD铜沉积模块。 该系统还包括铜间隙填充模块和耦合到至少一个阻挡层沉积模块和ALD铜沉积模块的至少一个传输模块。 转移模块被配置为使得基板可以在基本上不暴露于氧化物形成环境的基础之间传递。