摘要:
The present invention relates to a method for determining an optimal frame size for tag collision prevention in an Aloha-based RFID system in which frame sizes limited to a certain unit are used to identify tags, the method including the steps of using an RFID for: (a) calculating an estimated optimal frame value for the RFID reader identifying the tags; (b) calculating expected time delays per tag of a left-hand frame size and a right-hand frame size, which show the smallest differences with respect to the estimated optimal frame value, among the frame sizes; (c) comparing, the expected time delay per tag of the left-hand frame size with that of the right-hand frame size; and (d) determining a frame size which has a smaller expected time delay per tag, between the left-hand frame size and the right-hand frame size, to be an optimal frame size.
摘要:
The present invention relates to a method for determining an optimal frame size for tag collision prevention in an Aloha-based RFID system in which frame sizes limited to a certain unit are used to identify tags, the method including the steps of using an RFID for: (a) calculating an estimated optimal frame value for the RFID reader identifying the tags; (b) calculating expected time delays per tag of a left-hand frame size and a right-hand frame size, which show the smallest differences with respect to the estimated optimal frame value, among the frame sizes; (c) comparing, the expected time delay per tag of the left-hand frame size with that of the right-hand frame size; and (d) determining a frame size which has a smaller expected time delay per tag, between the left-hand frame size and the right-hand frame size, to be an optimal frame size.
摘要:
An electro-hydro valve lift system may include a drive cam, a pump piston, a first and a second EHV apparatus, a first oil control valve, a first oil control hydraulic line fluid-communicating the main chamber with the first oil control valve, a second oil control hydraulic line fluid-communicating the first oil control valve with the first EHV apparatus, a third oil control hydraulic line fluid-communicating the main chamber with the second EHV apparatus, a fourth oil control hydraulic line selectively fluid-communicated with the second oil control hydraulic line according to the first oil control valve, an accumulator fluid-communicated with the fourth oil control hydraulic line, and a second oil control valve disposed on the fourth oil control hydraulic line, wherein the fourth oil control hydraulic line is fluid-communicated with the third oil control hydraulic line according to the second oil control valve.
摘要:
A method of fabricating a semiconductor memory device includes alternately and repeatedly stacking sacrificial layers and insulating layers on a substrate, forming an active pattern penetrating the sacrificial layers and the insulating layers, continuously patterning the insulating layers and the sacrificial layers to form a trench, removing the sacrificial layers exposed in the trench to form recess regions exposing a sidewall of the active pattern, forming an information storage layer on the substrate, forming a gate conductive layer on the information storage layer, such that the gate conductive layer fills the recess regions and defines an empty region in the trench, the empty region being surrounded by the gate conductive layer, and performing an isotropic etch process with respect to the gate conductive layer to form gate electrodes in the recess regions, such that the gate electrodes are separated from each other.
摘要:
Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.
摘要:
E-money recharge service system, e-money recharge server, and recharge method are disclosed. The e-money recharge service system includes: recipient terminal for receiving and storing e-money; payer terminal for performing settlement approval procedure for payment of e-money loaded into recipient terminal; and money recharge server for receiving input of money information including information on the whole or part of identification of recipient terminal, identification of payer terminal, recharge amount, and methods of payment from subscriber to money recharge service, for the subscriber acting money payer recharging the recipient terminal with e-money corresponding to recharge amount and making payment for settling recharge amount of money through the methods of payment, and for the subscriber acting money recipient transmitting message of inquiry to payer terminal of settlement approval of recharge amount and recharging recipient terminal with e-money corresponding to recharge amount if settlement approval is issued by payer terminal.
摘要:
A method of fabricating a semiconductor memory device includes alternately and repeatedly stacking sacrificial layers and insulating layers on a substrate, forming an active pattern penetrating the sacrificial layers and the insulating layers, continuously patterning the insulating layers and the sacrificial layers to form a trench, removing the sacrificial layers exposed in the trench to form recess regions exposing a sidewall of the active pattern, forming an information storage layer on the substrate, forming a gate conductive layer on the information storage layer, such that the gate conductive layer fills the recess regions and defines an empty region in the trench, the empty region being surrounded by the gate conductive layer, and performing an isotropic etch process with respect to the gate conductive layer to form gate electrodes in the recess regions, such that the gate electrodes are separated from each other.
摘要:
A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.
摘要:
E-money recharge service system, e-money recharge server, and recharge method are disclosed. The e-money recharge service system includes: recipient terminal for receiving and storing e-money; payer terminal for performing settlement approval procedure for payment of e-money loaded into recipient terminal; and money recharge server for receiving input of money information including information on the whole or part of identification of recipient terminal, identification of payer terminal, recharge amount, and methods of payment from subscriber to money recharge service, for the subscriber acting money payer recharging the recipient terminal with e-money corresponding to recharge amount and making payment for settling recharge amount of money through the methods of payment, and for the subscriber acting money recipient transmitting message of inquiry to payer terminal of settlement approval of recharge amount and recharging recipient terminal with e-money corresponding to recharge amount if settlement approval is issued by payer terminal.
摘要:
An electro-hydro valve lift system may include a drive cam, a pump piston, a first and a second EHV apparatus, a first oil control valve, a first oil control hydraulic line fluid-communicating the main chamber with the first oil control valve, a second oil control hydraulic line fluid-communicating the first oil control valve with the first EHV apparatus, a third oil control hydraulic line fluid-communicating the main chamber with the second EHV apparatus, a fourth oil control hydraulic line selectively fluid-communicated with the second oil control hydraulic line according to the first oil control valve, an accumulator fluid-communicated with the fourth oil control hydraulic line, and a second oil control valve disposed on the fourth oil control hydraulic line, wherein the fourth oil control hydraulic line is fluid-communicated with the third oil control hydraulic line according to the second oil control valve.