公开(公告)号：US09735351B2

公开(公告)日：2017-08-15

申请号：US15203008

申请日：2016-07-06

申请人： Wonjun Lee ,  Inseak Hwang ,  Yongsun Ko ,  Changkyu Lee ,  Jinhye Bae ,  Hyunchul Shin ,  Shinhee Han ,  Yoonsung Han

发明人： Wonjun Lee ,  Inseak Hwang ,  Yongsun Ko ,  Changkyu Lee ,  Jinhye Bae ,  Hyunchul Shin ,  Shinhee Han ,  Yoonsung Han

IPC分类号： H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

CPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.

公开(公告)号：US08940182B2

公开(公告)日：2015-01-27

申请号：US13601064

申请日：2012-08-31

申请人： Young-Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

发明人： Young-Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC分类号： C09K13/06 ,  C09K13/04 ,  C23F1/16 ,  H01L21/311 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792 ,  H01L27/115

CPC分类号： H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

摘要翻译： 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物。 硅化合物包括硅原子，具有与硅原子结合的氨基的原子团以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US20130092872A1

公开(公告)日：2013-04-18

申请号：US13601064

申请日：2012-08-31

申请人： Young-Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

发明人： Young-Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC分类号： C09K13/06

CPC分类号： H01L21/02658 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889 ,  H01L29/7926

摘要： Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound. The silicon compound includes a silicon atom, an atomic group having an amino group combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

公开(公告)号：US10155903B2

公开(公告)日：2018-12-18

申请号：US15075709

申请日：2016-03-21

申请人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

IPC分类号： B44C1/22 ,  C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00 ,  C09K13/08 ,  H01L21/027 ,  H01L21/311 ,  H01L21/768 ,  H01L23/00 ,  C23F1/26 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/67 ,  C23F1/18 ,  C23F1/20

摘要： The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

公开(公告)号：US20160204001A1

公开(公告)日：2016-07-14

申请号：US15075709

申请日：2016-03-21

申请人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

IPC分类号： H01L21/3213 ,  H01L23/00 ,  H01L21/027 ,  H01L21/768 ,  H01L21/311

CPC分类号： C09K13/08 ,  C23F1/18 ,  C23F1/20 ,  C23F1/26 ,  H01L21/02063 ,  H01L21/0273 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/6708 ,  H01L21/76802 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/03614 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104

摘要： The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

公开(公告)号：US20150228588A1

公开(公告)日：2015-08-13

申请号：US14519788

申请日：2014-10-21

申请人： Tae-Hyoung Koo ,  Samjong Choi ,  Dongjun Lee ,  Yongsun Ko

发明人： Tae-Hyoung Koo ,  Samjong Choi ,  Dongjun Lee ,  Yongsun Ko

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer can be provided to include a single crystalline semiconductor material with a predetermined crystal orientation. The wafer can include a laser mark at a determined position on a front surface or on a back surface of the wafer, where the determined position is configured to indicate the predetermined crystal orientation of the single crystalline semiconductor material.

摘要翻译： 可以提供晶片以包括具有预定晶体取向的单晶半导体材料。 晶片可以在晶片的前表面或后表面上的确定位置处包括激光标记，其中所确定的位置被配置为指示单晶半导体材料的预定晶体取向。

公开(公告)号：US10242880B2

公开(公告)日：2019-03-26

申请号：US15645419

申请日：2017-07-10

申请人： Kwangsu Kim ,  Se-Ho Cha ,  Yongsun Ko ,  Keonyoung Kim ,  Kyunghyun Kim ,  ChangSup Mun ,  Choongkee Seong ,  Sunjoong Song ,  Jinwoo Lee ,  Hoon Han

发明人： Kwangsu Kim ,  Se-Ho Cha ,  Yongsun Ko ,  Keonyoung Kim ,  Kyunghyun Kim ,  ChangSup Mun ,  Choongkee Seong ,  Sunjoong Song ,  Jinwoo Lee ,  Hoon Han

IPC分类号： H01L21/311 ,  H01L21/306 ,  H01L21/4757 ,  H01L21/02 ,  H01L21/67 ,  H01L27/11582 ,  H01L27/1157 ,  H01L27/11565

摘要： Disclosed are a method of wet etching and a method of fabricating a semiconductor device. The wet etching method includes providing a wafer in a process bath and an etchant is accommodated, supplying the process bath with a primary etchant to control a concentration of a specific material in the etchant, supplying the process bath with a first additive to increase the concentration of the specific material in the etchant, and supplying the process bath with a second additive to suppress a defect caused by an increase in the concentration of the specific material in the etchant. The etchant includes at least one, of the primary etchant, the first additive, and the second additive. The first additive and the second additive are separately supplied to the process bath.

公开(公告)号：US09589901B2

公开(公告)日：2017-03-07

申请号：US14519788

申请日：2014-10-21

申请人： Tae-Hyoung Koo ,  Samjong Choi ,  Dongjun Lee ,  Yongsun Ko

发明人： Tae-Hyoung Koo ,  Samjong Choi ,  Dongjun Lee ,  Yongsun Ko

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54406 ,  H01L2223/54413 ,  H01L2223/54433 ,  H01L2223/54453 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： A wafer can be provided to include a single crystalline semiconductor material with a predetermined crystal orientation. The wafer can include a laser mark at a determined position on a front surface or on a back surface of the wafer, where the determined position is configured to indicate the predetermined crystal orientation of the single crystalline semiconductor material.

摘要翻译： 可以提供晶片以包括具有预定晶体取向的单晶半导体材料。 晶片可以在晶片的前表面或后表面上的确定位置处包括激光标记，其中所确定的位置被配置为指示单晶半导体材料的预定晶体取向。

公开(公告)号：US20150368557A1

公开(公告)日：2015-12-24

申请号：US14312043

申请日：2014-06-23

申请人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

发明人： Hyosan Lee ,  Yongsun Ko ,  Kyoungseob Kim ,  Kuntack Lee ,  Jihoon Jeong ,  Chen Lin ,  Christopher K. Ober

IPC分类号： C09K13/00

CPC分类号： C09K13/08 ,  C23F1/18 ,  C23F1/20 ,  C23F1/26 ,  H01L21/02063 ,  H01L21/0273 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/67017 ,  H01L21/6708 ,  H01L21/76802 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/03614 ,  H01L2224/0401 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104

摘要： The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

摘要翻译： 本发明构思提供金属蚀刻剂组合物和使用其制造半导体器件的方法。 金属蚀刻剂组合物包括约0.1重量％至约20重量％范围内的有机过氧化物，约0.1重量％至约70重量％范围内的有机酸和约0.001重量％至约70重量％范围内的醇系溶剂 10重量％至约99.8重量％。 金属蚀刻剂组合物可用于无水体系中。

公开(公告)号：US09027576B2

公开(公告)日：2015-05-12

申请号：US13844149

申请日：2013-03-15

申请人： Yong-Jhin Cho ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Wonho Jang ,  Yongmyung Jun

发明人： Yong-Jhin Cho ,  Yongsun Ko ,  Kyoungseob Kim ,  Kwangsu Kim ,  SeokHoon Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Wonho Jang ,  Yongmyung Jun

IPC分类号： H01L21/67

CPC分类号： H01L21/67017 ,  H01L21/67051 ,  H01L21/6708

摘要： Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone.

摘要翻译： 提供底物处理系统。 衬底处理系统可以包括被配置为用超临界流体处理衬底的处理装置和被配置为将超临界流体供应到处理装置的供给装置。 处理装置可以包括其中用超临界流体处理衬底的超临界过程区，以及超临界过程区，其中超临界流体被膨胀，然后被提供到超临界过程区以在超临界流体中产生超临界状态 过程区。