公开(公告)号：US09525128B2

公开(公告)日：2016-12-20

申请号：US14225401

申请日：2014-03-25

申请人： Sungyoon Chung ,  Jinhye Bae ,  Hyungjoon Kwon ,  Jongchul Park ,  Wonjun Lee

发明人： Sungyoon Chung ,  Jinhye Bae ,  Hyungjoon Kwon ,  Jongchul Park ,  Wonjun Lee

IPC分类号： H01L43/12 ,  H01L21/321 ,  H01L21/3213

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A method of manufacturing a semiconductor device may include forming a material layer on a substrate, performing a selective oxidation process to form a capping oxide layer on a first surface of the material layer, wherein a second surface of the material layer is not oxidized, and etching the material layer through the second surface to form a material pattern. An etch rate of the capping oxide layer is less than an etch rate of the material layer. A semiconductor device may include a lower electrode on a substrate, a data storage part on a top surface of the lower electrode, an upper electrode on the data storage part, and a capping oxide layer arranged on at least a portion of a top surface of the upper electrode. The capping oxide layer may include an oxide formed by oxidation of an upper surface of the upper electrode.

摘要翻译： 制造半导体器件的方法可以包括在衬底上形成材料层，进行选择性氧化工艺以在材料层的第一表面上形成覆盖氧化物层，其中材料层的第二表面不被氧化，以及 通过第二表面蚀刻材料层以形成材料图案。 覆盖氧化物层的蚀刻速率小于材料层的蚀刻速率。 半导体器件可以包括在基板上的下电极，在下电极的顶表面上的数据存储部分，数据存储部分上的上电极，以及覆盖氧化物层，其设置在 上电极。 覆盖氧化物层可以包括通过氧化上部电极的上表面形成的氧化物。

公开(公告)号：US09735351B2

公开(公告)日：2017-08-15

申请号：US15203008

申请日：2016-07-06

申请人： Wonjun Lee ,  Inseak Hwang ,  Yongsun Ko ,  Changkyu Lee ,  Jinhye Bae ,  Hyunchul Shin ,  Shinhee Han ,  Yoonsung Han

发明人： Wonjun Lee ,  Inseak Hwang ,  Yongsun Ko ,  Changkyu Lee ,  Jinhye Bae ,  Hyunchul Shin ,  Shinhee Han ,  Yoonsung Han

IPC分类号： H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

CPC分类号： H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

摘要： Manufacturing a MRAM device may include removing etch residues from a magnetic tunnel junction (MTJ) pattern in the presence of an atmosphere. The removing may include applying a cleaning solution to one or more surfaces of the MTJ pattern. Manufacturing the MRAM device may include removing an oxide layer based on sputter etching of the MTJ pattern. The etch residues may be removed such that the oxide layer is formed. Removing the etch residues may include applying a cleaning solution to the MTJ pattern. The etch residues may be removed in the presence of an atmosphere. The MTJ pattern may be formed based on patterning an MTJ layer in a vacuum state such that the etch residues are formed on a surface of the MTJ pattern.

公开(公告)号：US20130146002A1

公开(公告)日：2013-06-13

申请号：US13528616

申请日：2012-06-20

申请人： Jei Choon Yang ,  Byong Young Choi ,  Young Hong Kwak ,  Wonjun Lee ,  Jin Kook Kong ,  Soo Hyung Woo

发明人： Jei Choon Yang ,  Byong Young Choi ,  Young Hong Kwak ,  Wonjun Lee ,  Jin Kook Kong ,  Soo Hyung Woo

IPC分类号： F01L9/00 ,  F01L9/04 ,  F01L9/02

CPC分类号： F01L9/021 ,  F01L13/0015

摘要： An electro-hydro valve lift system may include a drive cam, a pump piston, a first and a second EHV apparatus, a first oil control valve, a first oil control hydraulic line fluid-communicating the main chamber with the first oil control valve, a second oil control hydraulic line fluid-communicating the first oil control valve with the first EHV apparatus, a third oil control hydraulic line fluid-communicating the main chamber with the second EHV apparatus, a fourth oil control hydraulic line selectively fluid-communicated with the second oil control hydraulic line according to the first oil control valve, an accumulator fluid-communicated with the fourth oil control hydraulic line, and a second oil control valve disposed on the fourth oil control hydraulic line, wherein the fourth oil control hydraulic line is fluid-communicated with the third oil control hydraulic line according to the second oil control valve.

摘要翻译： 电动水阀提升系统可以包括驱动凸轮，泵活塞，第一和第二EHV装置，第一油控阀，第一油控液压管路，其将主室与第一油控阀连通， 将第一油控阀与第一EHV装置连通的第二油控液压管路，与第二EHV装置连通主室的第三油控液压管路，与第一EHV装置连通的第四油控液压管路， 第二油控油路，根据第一油控阀，与第四油控液压管路流体连通的蓄液器和配置在第四油控液压管路上的第二油控阀，其中第四油控液压管线为流体 根据第二油控阀与第三油控液压管路连通。

公开(公告)号：US20110076819A1

公开(公告)日：2011-03-31

申请号：US12662187

申请日：2010-04-05

申请人： Jinho Kim ,  Byoungkeun Son ,  Hansoo Kim ,  Wonjun Lee ,  Daehyun Jang

发明人： Jinho Kim ,  Byoungkeun Son ,  Hansoo Kim ,  Wonjun Lee ,  Daehyun Jang

IPC分类号： H01L21/8239

CPC分类号： H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7827 ,  H01L29/7889 ,  H01L29/7926

摘要： A method of fabricating a semiconductor memory device includes alternately and repeatedly stacking sacrificial layers and insulating layers on a substrate, forming an active pattern penetrating the sacrificial layers and the insulating layers, continuously patterning the insulating layers and the sacrificial layers to form a trench, removing the sacrificial layers exposed in the trench to form recess regions exposing a sidewall of the active pattern, forming an information storage layer on the substrate, forming a gate conductive layer on the information storage layer, such that the gate conductive layer fills the recess regions and defines an empty region in the trench, the empty region being surrounded by the gate conductive layer, and performing an isotropic etch process with respect to the gate conductive layer to form gate electrodes in the recess regions, such that the gate electrodes are separated from each other.

摘要翻译： 一种制造半导体存储器件的方法包括在衬底上交替地和重复堆叠牺牲层和绝缘层，形成穿透牺牲层和绝缘层的有源图案，连续地图案化绝缘层和牺牲层以形成沟槽，去除 所述牺牲层暴露在所述沟槽中以形成露出所述有源图案的侧壁的凹陷区域，在所述衬底上形成信息存储层，在所述信息存储层上形成栅极导电层，使得所述栅极导电层填充所述凹部区域， 在沟槽中限定空区域，空区域被栅极导电层包围，并且相对于栅极导电层执行各向同性蚀刻处理，以在凹陷区域中形成栅电极，使得栅电极与每个栅电极分离 其他。

公开(公告)号：US20120036067A1

公开(公告)日：2012-02-09

申请号：US13264633

申请日：2010-04-15

申请人： Wonjun Lee ,  Seungjin Choi ,  Dongphil Lim ,  Hongkeun Ji ,  Dohyun Jang ,  Sangsoo Oh ,  Hoon Seong

发明人： Wonjun Lee ,  Seungjin Choi ,  Dongphil Lim ,  Hongkeun Ji ,  Dohyun Jang ,  Sangsoo Oh ,  Hoon Seong

IPC分类号： G06Q40/02

CPC分类号： G06Q20/32 ,  G06Q20/0655 ,  G06Q20/105 ,  G06Q20/363 ,  G06Q20/3672 ,  H04M15/00 ,  H04M15/68 ,  H04M17/20 ,  H04M17/202 ,  H04M17/204 ,  H04M17/205 ,  H04M17/206 ,  H04W4/24

摘要： E-money recharge service system, e-money recharge server, and recharge method are disclosed. The e-money recharge service system includes: recipient terminal for receiving and storing e-money; payer terminal for performing settlement approval procedure for payment of e-money loaded into recipient terminal; and money recharge server for receiving input of money information including information on the whole or part of identification of recipient terminal, identification of payer terminal, recharge amount, and methods of payment from subscriber to money recharge service, for the subscriber acting money payer recharging the recipient terminal with e-money corresponding to recharge amount and making payment for settling recharge amount of money through the methods of payment, and for the subscriber acting money recipient transmitting message of inquiry to payer terminal of settlement approval of recharge amount and recharging recipient terminal with e-money corresponding to recharge amount if settlement approval is issued by payer terminal.

摘要翻译： 披露电子货币充值服务系统，电子货币充值服务器和充值方式。 电子货币充值服务系统包括：接收和存储电子货币的接收方; 付款人终端执行结算批准程序，用于支付加载到接收方终端的电子货币; 以及用于从订户到货币充值服务接收输入货币信息的信息，包括关于接收方终端的识别，付款人终端的识别，充值金额以及付款方式的信息的输入的货币充值服务器， 收款终端，电子货币对应于充值金额，并通过付款方式支付结算充值金额，并为用户代理货币收款人发送查询付款人付款人终端的充值金额和充值接收方终端的付款人 付款人终端发出结算许可的电子货币对应的充值金额。

公开(公告)号：US08383482B2

公开(公告)日：2013-02-26

申请号：US12662187

申请日：2010-04-05

申请人： Jinho Kim ,  Byoungkeun Son ,  Hansoo Kim ,  Wonjun Lee ,  Daehyun Jang

发明人： Jinho Kim ,  Byoungkeun Son ,  Hansoo Kim ,  Wonjun Lee ,  Daehyun Jang

IPC分类号： H01L21/336

CPC分类号： H01L27/11551 ,  H01L27/11556 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/42336 ,  H01L29/42352 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7827 ,  H01L29/7889 ,  H01L29/7926

摘要： A method of fabricating a semiconductor memory device includes alternately and repeatedly stacking sacrificial layers and insulating layers on a substrate, forming an active pattern penetrating the sacrificial layers and the insulating layers, continuously patterning the insulating layers and the sacrificial layers to form a trench, removing the sacrificial layers exposed in the trench to form recess regions exposing a sidewall of the active pattern, forming an information storage layer on the substrate, forming a gate conductive layer on the information storage layer, such that the gate conductive layer fills the recess regions and defines an empty region in the trench, the empty region being surrounded by the gate conductive layer, and performing an isotropic etch process with respect to the gate conductive layer to form gate electrodes in the recess regions, such that the gate electrodes are separated from each other.

摘要翻译： 一种制造半导体存储器件的方法包括在衬底上交替地和重复堆叠牺牲层和绝缘层，形成穿透牺牲层和绝缘层的有源图案，连续地图案化绝缘层和牺牲层以形成沟槽，去除 所述牺牲层暴露在所述沟槽中以形成露出所述有源图案的侧壁的凹陷区域，在所述衬底上形成信息存储层，在所述信息存储层上形成栅极导电层，使得所述栅极导电层填充所述凹部区域， 在沟槽中限定空区域，空区域被栅极导电层包围，并且相对于栅极导电层执行各向同性蚀刻处理，以在凹陷区域中形成栅电极，使得栅电极与每个栅电极分离 其他。

公开(公告)号：US20110063085A1

公开(公告)日：2011-03-17

申请号：US12623999

申请日：2009-11-23

申请人： HYUNMIN JANG ,  Wonjun Lee ,  Donghwan Lee ,  Joosik Lee ,  Sukil Kang ,  Youngshin Yoon ,  Junghee Han

发明人： HYUNMIN JANG ,  Wonjun Lee ,  Donghwan Lee ,  Joosik Lee ,  Sukil Kang ,  Youngshin Yoon ,  Junghee Han

IPC分类号： G06K7/01

CPC分类号： H04W28/06 ,  H04W74/08

摘要： The present invention relates to a method for determining an optimal frame size for tag collision prevention in an Aloha-based RFID system in which frame sizes limited to a certain unit are used to identify tags, the method including the steps of using an RFID for: (a) calculating an estimated optimal frame value for the RFID reader identifying the tags; (b) calculating expected time delays per tag of a left-hand frame size and a right-hand frame size, which show the smallest differences with respect to the estimated optimal frame value, among the frame sizes; (c) comparing, the expected time delay per tag of the left-hand frame size with that of the right-hand frame size; and (d) determining a frame size which has a smaller expected time delay per tag, between the left-hand frame size and the right-hand frame size, to be an optimal frame size.

摘要翻译： 本发明涉及一种在基于Aloha的RFID系统中确定用于标签碰撞预防的最佳帧大小的方法，其中使用限于某个单元的帧大小来识别标签，该方法包括以下步骤： （a）计算识别标签的RFID读取器的估计最佳帧值; （b）在帧大小之间计算每个标签的左侧帧大小和右侧帧大小的预测时间延迟，其显示相对于估计的最佳帧值的最小差异; （c）将左侧帧大小的每个标签的预期时间延迟与右侧帧大小的预期时间延迟进行比较; 以及（d）确定在左侧帧大小和右侧帧大小之间具有较小的每个标签的预期时间延迟的帧大小为最佳帧大小。

公开(公告)号：US09501770B2

公开(公告)日：2016-11-22

申请号：US13264633

申请日：2010-04-15

申请人： Wonjun Lee ,  Seungjin Choi ,  Dongphil Lim ,  Hongkeun Ji ,  Dohyun Jang ,  Sangsoo Oh ,  Hoon Seong

发明人： Wonjun Lee ,  Seungjin Choi ,  Dongphil Lim ,  Hongkeun Ji ,  Dohyun Jang ,  Sangsoo Oh ,  Hoon Seong

IPC分类号： G06Q20/00 ,  G06Q20/32 ,  G06Q20/06 ,  G06Q20/10 ,  G06Q20/36 ,  H04M15/00 ,  H04M17/00 ,  H04W4/24

CPC分类号： G06Q20/32 ,  G06Q20/0655 ,  G06Q20/105 ,  G06Q20/363 ,  G06Q20/3672 ,  H04M15/00 ,  H04M15/68 ,  H04M17/20 ,  H04M17/202 ,  H04M17/204 ,  H04M17/205 ,  H04M17/206 ,  H04W4/24

摘要： E-money recharge service system, e-money recharge server, and recharge method are disclosed. The e-money recharge service system includes: recipient terminal for receiving and storing e-money; payer terminal for performing settlement approval procedure for payment of e-money loaded into recipient terminal; and money recharge server for receiving input of money information including information on the whole or part of identification of recipient terminal, identification of payer terminal, recharge amount, and methods of payment from subscriber to money recharge service, for the subscriber acting money payer recharging the recipient terminal with e-money corresponding to recharge amount and making payment for settling recharge amount of money through the methods of payment, and for the subscriber acting money recipient transmitting message of inquiry to payer terminal of settlement approval of recharge amount and recharging recipient terminal with e-money corresponding to recharge amount if settlement approval is issued by payer terminal.

摘要翻译： 披露电子货币充值服务系统，电子货币充值服务器和充值方式。 电子货币充值服务系统包括：接收和存储电子货币的接收方; 付款人终端执行结算批准程序，用于支付加载到接收方终端的电子货币; 以及用于从订户到货币充值服务接收输入货币信息的信息，包括关于接收方终端的识别，付款人终端的识别，充值金额以及付款方式的信息的输入的货币充值服务器， 收款终端，电子货币对应于充值金额，并通过付款方式支付结算充值金额，并为用户代理货币收款人发送查询付款人付款人终端的充值金额和充值接收方终端的付款人 付款人终端发出结算许可的电子货币对应的充值金额。

公开(公告)号：US08610544B2

公开(公告)日：2013-12-17

申请号：US12623999

申请日：2009-11-23

申请人： Hyunmin Jang ,  Wonjun Lee ,  Donghwan Lee ,  Joosik Lee ,  Sukil Kang ,  Youngshin Yoon ,  Junghee Han

发明人： Hyunmin Jang ,  Wonjun Lee ,  Donghwan Lee ,  Joosik Lee ,  Sukil Kang ,  Youngshin Yoon ,  Junghee Han

IPC分类号： H04Q5/22

CPC分类号： H04W28/06 ,  H04W74/08

摘要： The present invention relates to a method for determining an optimal frame size for tag collision prevention in an Aloha-based RFID system in which frame sizes limited to a certain unit are used to identify tags, the method including the steps of using an RFID for: (a) calculating an estimated optimal frame value for the RFID reader identifying the tags; (b) calculating expected time delays per tag of a left-hand frame size and a right-hand frame size, which show the smallest differences with respect to the estimated optimal frame value, among the frame sizes; (c) comparing, the expected time delay per tag of the left-hand frame size with that of the right-hand frame size; and (d) determining a frame size which has a smaller expected time delay per tag, between the left-hand frame size and the right-hand frame size, to be an optimal frame size.

摘要翻译： 本发明涉及一种在基于Aloha的RFID系统中确定用于标签碰撞预防的最佳帧大小的方法，其中使用限于某个单元的帧大小来识别标签，该方法包括以下步骤： （a）计算识别标签的RFID读取器的估计最佳帧值; （b）在帧大小之间计算每个标签的左侧帧大小和右侧帧大小的预测时间延迟，其显示相对于估计的最佳帧值的最小差异; （c）将左侧帧大小的每个标签的预期时间延迟与右侧帧大小的预期时间延迟进行比较; 以及（d）确定在左侧帧大小和右侧帧大小之间具有较小的每个标签的预期时间延迟的帧大小为最佳帧大小。

公开(公告)号：US08607751B2

公开(公告)日：2013-12-17

申请号：US13528616

申请日：2012-06-20

申请人： Jei Choon Yang ,  Byong Young Choi ,  Young Hong Kwak ,  Wonjun Lee ,  Jin Kook Kong ,  Soo Hyung Woo

发明人： Jei Choon Yang ,  Byong Young Choi ,  Young Hong Kwak ,  Wonjun Lee ,  Jin Kook Kong ,  Soo Hyung Woo

IPC分类号： F01L1/34

CPC分类号： F01L9/021 ,  F01L13/0015

摘要： An electro-hydro valve lift system may include a drive cam, a pump piston, a first and a second EHV apparatus, a first oil control valve, a first oil control hydraulic line fluid-communicating the main chamber with the first oil control valve, a second oil control hydraulic line fluid-communicating the first oil control valve with the first EHV apparatus, a third oil control hydraulic line fluid-communicating the main chamber with the second EHV apparatus, a fourth oil control hydraulic line selectively fluid-communicated with the second oil control hydraulic line according to the first oil control valve, an accumulator fluid-communicated with the fourth oil control hydraulic line, and a second oil control valve disposed on the fourth oil control hydraulic line, wherein the fourth oil control hydraulic line is fluid-communicated with the third oil control hydraulic line according to the second oil control valve.

摘要翻译： 电动水阀提升系统可以包括驱动凸轮，泵活塞，第一和第二EHV装置，第一油控阀，第一油控液压管路，其将主室与第一油控阀连通， 将第一油控阀与第一EHV装置连通的第二油控液压管路，与第二EHV装置连通主室的第三油控液压管路，与第一EHV装置连通的第四油控油压管路， 第二油控油路，根据第一油控阀，与第四油控液压管路流体连通的蓄液器和配置在第四油控液压管路上的第二油控阀，其中第四油控液压管线为流体 根据第二油控阀与第三油控液压管路连通。