公开(公告)号：US20040060919A1

公开(公告)日：2004-04-01

申请号：US10663681

申请日：2003-09-17

申请人： IBIDEN CO., LTD.

发明人： Yasutaka Ito ,  Yasuji Hiramatsu

IPC分类号： H05B003/68

CPC分类号： H01L21/6831 ,  H01L21/6833

摘要： This invention has its object to provide a ceramic board which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force. This invention provides a ceramic board for semiconductor manufacture apparatuses comprising a ceramic substrate and a semiconductor wafer mounted thereon directly or supported indirectly at a fixed distance from its surface, wherein the surface of said ceramic substrate, where said semiconductor wafer is to be mounted or supported, is controlled to a flatness of 1 to 50 nullm over a measurement range of null(diametric end-to-end length)-10 mmnull.

公开(公告)号：US20040045951A1

公开(公告)日：2004-03-11

申请号：US10658454

申请日：2003-09-10

申请人： IBIDEN CO., LTD.

发明人： Yasutaka Ito ,  Yasuji Hiramatsu

IPC分类号： H05B003/68

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/265 ,  H05B3/283 ,  H05B3/74

摘要： An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 nullm according to JIS B 0601.

摘要翻译： 本发明的目的是提供一种陶瓷加热器，其可以抑制热量向支撑壳体的流出等，以使陶瓷基板的温度均匀。 本发明的陶瓷加热器是陶瓷加热器，其中加热元件布置在陶瓷基片的表面或陶瓷基片的内部，陶瓷基片的侧面的表面粗糙度Rmax为0.1〜200μm，根据 JIS B 0601。

公开(公告)号：US20040007773A1

公开(公告)日：2004-01-15

申请号：US10615950

申请日：2003-07-10

申请人： IBIDEN CO., LTD.

发明人： Yasuji Hiramatsu ,  Yasutaka Ito

IPC分类号： B32B003/00

CPC分类号： C04B41/88 ,  C04B41/009 ,  C04B41/5057 ,  C04B41/51 ,  C04B41/5116 ,  C04B41/87 ,  C04B2111/00844 ,  H01L21/6833 ,  Y10T428/24917 ,  C04B41/4539 ,  C04B41/4572 ,  C04B41/4578 ,  C04B35/581

摘要： The objective of the invention is to provide a ceramic substrate: wherein even if rapid temperature rising or rapid temperature falling is conducted, no problem of cracking or warp of the ceramic substrate occurs; wherein, in case that the ceramic substrate is a ceramic substrate constituting an electrostatic chuck, local dispersion of chuck power is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a hot plate, local dispersion of temperature of a wafer treating face is eliminated, in case that the ceramic substrate is a ceramic substrate constituting a wafer prober, dispersion of applied voltage of a guard electrode or a ground electrode is eliminated and a stray capacitor or noise can be eliminated. The ceramic substrate of the present invention is a ceramic substrate provided with a conductor layer on the surface of the ceramic substrate or inside the ceramic substrate, wherein: the ratio (t2/t1) of the average thickness of the conductor layer (t2) to the average thickness of the ceramic substrate (t1) is less than 0.1 and; a dispersion of the thickness of the conductor layer to the average thickness of the conductor layer is in a range of null70 to null150%.

摘要翻译： 本发明的目的是提供一种陶瓷基板：其中，即使进行快速升温或快速降温，也不会发生陶瓷基板的开裂或翘曲的问题; 其中，在陶瓷基板是构成静电卡盘的陶瓷基板的情况下，消除了卡盘功率的局部分散，在陶瓷基板为构成热板的陶瓷基板的情况下，晶片处理面的温度的局部分散为 在陶瓷基板是构成晶片探测器的陶瓷基板的情况下，消除了保护电极或接地电极的施加电压的分散，并且可以消除杂散电容器或噪声。 本发明的陶瓷基板是在陶瓷基板的表面或陶瓷基板的内部具有导体层的陶瓷基板，其中：导体层（t2）的平均厚度（t2）与 陶瓷基板的平均厚度（t1）小于0.1， 导体层的厚度相对于导体层的平均厚度的分散在-70〜+ 150％的范围内。

公开(公告)号：US20030141108A1

公开(公告)日：2003-07-31

申请号：US10358933

申请日：2003-02-05

申请人： IBIDEN CO., Ltd.

发明人： Ryo Enomoto ,  Yasuji Hiramatsu

IPC分类号： H05K001/11

CPC分类号： H05K3/4617 ,  H05K3/0035 ,  H05K3/28 ,  H05K3/382 ,  H05K3/386 ,  H05K3/423 ,  H05K3/4602 ,  H05K3/4652 ,  H05K2201/0195 ,  H05K2201/035 ,  H05K2201/0394 ,  H05K2201/09563 ,  H05K2203/0733 ,  H05K2203/1189 ,  Y10T29/49117 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49165

摘要： Holes (40a) are formed with a laser beam through an insulating substrate (40) on which a metallic layer (42) is formed and via holes (36a) are formed by filling up the holes (40a) with a metal (46). After the via holes (36a) are formed, a conductor circuit (32a) is formed by etching the metallic layer (42) and a single-sided circuit board (30A) is formed by forming projecting conductors (38a) on the surfaces of the via holes (36a). The projecting conductors (38a) on the circuit board (30A) are put on the conductor circuit (32b) of another single-sided circuit board (30B) with adhesive layers (50) composed of an uncured resin in-between and heated and pressed against the circuit (32b). The projecting conductors (38a) get in the uncured resin by pushing aside the resin and are electrically connected to the circuit (32b). Since single-sided circuit boards (30A, 30B, 30C, and 30D) can be inspected for defective parts before the boards (30A, 30B, 30C, and 30D) are laminated upon one another, only defectless single-sided circuit can be used in the step of lamination.

摘要翻译： 孔（40a）通过其上形成有金属层（42）的绝缘基板（40）形成有激光束，并且通过用金属（46）填充孔（40a）形成通孔（36a）。 在形成通孔（36a）之后，通过蚀刻金属层（42）形成导体电路（32a），并且通过在其表面上形成突出导体（38a）形成单面电路板（30A） 通孔（36a）。 电路板（30A）上的突出导体（38a）被放置在另一单面电路板（30B）的导体电路（32b）上，其中粘合剂层（50）由未固化的树脂构成，并被加热和压制 抵靠电路（32b）。 突出导体（38a）通过推开树脂并与电路（32b）电连接而进入未固化树脂。 由于在板（30A，30B，30C和30D）彼此层叠之前可以检查单面电路板（30A，30B，30C和30D）中的缺陷部件，因此仅可以使用无缺陷的单面电路 在层压步骤中。

公开(公告)号：US20020158061A1

公开(公告)日：2002-10-31

申请号：US10118967

申请日：2002-04-10

申请人： IBIDEN CO., LTD.

发明人： Yasutaka Ito ,  Yasuji Hiramatsu

IPC分类号： H05B003/74

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H05B3/143 ,  H05B3/265 ,  H05B3/283 ,  H05B3/74

摘要： An object of the present invention is to provide a ceramic heater making it possible to suppress an outflow of heat to a supporting case and so on to make the temperature of its ceramic substrate uniform. The ceramic heater of the present invention is a ceramic heater wherein a heating element is arranged on a surface of a ceramic substrate or inside the ceramic substrate, the surface roughness Rmax of the side face of the ceramic substrate being from 0.1 to 200 nullm according to JIS B 0601.

摘要翻译： 本发明的目的是提供一种陶瓷加热器，其可以抑制热量向支撑壳体的流出等，以使陶瓷基板的温度均匀。 本发明的陶瓷加热器是陶瓷加热器，其中加热元件布置在陶瓷基片的表面或陶瓷基片的内部，陶瓷基片的侧面的表面粗糙度Rmax为0.1〜200μm，根据 JIS B 0601。

公开(公告)号：US20040242400A1

公开(公告)日：2004-12-02

申请号：US10876665

申请日：2004-06-28

申请人： IBIDEN CO., LTD.

发明人： Yasutaka Ito ,  Yasuji Hiramatsu

IPC分类号： C04B035/581

CPC分类号： H01L21/67103 ,  C04B35/581 ,  H01L21/6831 ,  Y10T279/23 ,  Y10T428/24917 ,  Y10T428/30

摘要： An objective of the present invention is to provide an aluminum nitride sintered body making it possible to keep a volume resistivity of 108nullnullcm or more, and guarantee covering-up capability, a large radiant heat amount and measurement accuracy with a thermoviewer. A carbon-containing aluminum nitride sintered body of the present invention of the present invention comprising: carbon whose peak cannot be detected on its X-ray diffraction chart or whose peak is below its detection limit thereon; in a matrix made of aluminum nitride.

摘要翻译： 本发明的目的是提供一种氮化铝烧结体，其可以使体积电阻率保持在10 -8Ω·cm以上，并且保证覆盖能力，辐射热量大，测量精度高 热电影 本发明的含碳氮化铝烧结体，其特征在于，具有：在其X射线衍射图上峰不能被检出或其峰值低于其检测限的碳; 在由氮化铝制成的基体中。

公开(公告)号：US20040222197A1

公开(公告)日：2004-11-11

申请号：US10863753

申请日：2004-06-09

申请人： IBIDEN CO., LTD.

发明人： Yasuji Hiramatsu

IPC分类号： B23K026/38 ,  B23K026/03

CPC分类号： B23K26/066 ,  B23K26/03 ,  B23K26/032 ,  B23K26/04 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/067 ,  B23K26/0673 ,  B23K26/08 ,  B23K26/082 ,  B23K26/0853 ,  B23K26/382 ,  B23K26/389 ,  B23K26/40 ,  B23K2101/42 ,  B23K2103/16 ,  B23K2103/42 ,  B23K2103/50 ,  H05K1/0269 ,  H05K3/0008 ,  H05K3/0026 ,  H05K3/0035 ,  H05K3/4644 ,  H05K3/4679 ,  H05K2201/09781 ,  H05K2201/09918 ,  H05K2201/10113

摘要： There is provided a laser processing apparatus, a multilayer printed wiring board manufacturing apparatus, and a manufacturing method to form via holes of ultra-fine diameter. The laser beam from the CO2 laser oscillator (60) is converted to the shortened wavelength beam by a tellurium crystal (94) to control diffraction of the laser beam. Simultaneously, when the laser beam is condensed, a limit value of the condensation limit is reduced. Thereby, the spot diameter of laser beam is reduced and a hole for via hole is bored on the interlayer insulation resin on a substrate (10). Therefore, even when the laser beam output is raised to form a deeper hole, the hole diameter is not widened and thereby a hole for a small diameter via hole can be formed.

摘要翻译： 提供了一种形成超细直径的通孔的激光加工装置，多层印刷线路板制造装置和制造方法。 来自CO2激光振荡器（60）的激光束通过碲晶体（94）转换成缩短的波长束，以控制激光束的衍射。 同时，当激光束被冷凝时，冷凝极限的极限值降低。 因此，激光束的光斑直径减小，并且在基板（10）上的层间绝缘树脂上开孔用于通孔。 因此，即使当激光束输出升高以形成较深的孔时，孔径也不会变宽，因此可以形成用于小直径通孔的孔。

公开(公告)号：US20040217105A1

公开(公告)日：2004-11-04

申请号：US10855324

申请日：2004-05-28

申请人： IBIDEN CO., LTD.

发明人： Yasutaka Ito ,  Yasuji Hiramatsu

IPC分类号： H05B003/68

CPC分类号： H01L21/6831 ,  H01L21/6833

摘要： This invention has its object to provide a ceramic board which, when used as a heater, heats a silicon wafer uniformly throughout and, hence, does not damage the wafer and, when used as an electrostatic chuck, provides a sufficient chucking force. This invention provides a ceramic board for semiconductor manufacture apparatuses comprising a ceramic substrate and a semiconductor wafer mounted thereon directly or supported indirectly at a fixed distance from its surface, wherein the surface of said ceramic substrate, where said semiconductor wafer is to be mounted or supported, is controlled to a flatness of 1 to 50 nullm over a measurement range of null(diametric end-to-end length)null10 mmnull.

摘要翻译： 本发明的目的是提供一种陶瓷板，当用作加热器时，均匀地加热硅晶片，并且因此不损坏晶片，并且当用作静电卡盘时，提供足够的夹持力。 本发明提供了一种用于半导体制造装置的陶瓷板，其包括陶瓷基板和安装在其上的半导体晶片，其直接或间接地与其表面固定距离地支撑，其中所述陶瓷基板的表面将安装或支撑所述半导体晶片 在[（直径端对端长度）〜10mm]的测量范围内被控制为1〜50μm的平坦度。

公开(公告)号：US20040016746A1

公开(公告)日：2004-01-29

申请号：US10618665

申请日：2003-07-15

申请人： IBIDEN CO., LTD.

发明人： Yasutakaq Ito ,  Masakazu Furukawa ,  Yasuji Hiramatsu

IPC分类号： H05B003/68

CPC分类号： H05B1/0233 ,  H01L21/67248 ,  H05B3/143 ,  H05B3/265 ,  H05B3/283

摘要： An objective of the present invention is to provide a ceramic heater making it possible to heat an object to be heated, such as a silicon wafer, uniformly. The ceramic heater of the present invention is a ceramic heater wherein a heating element is formed on a surface of a ceramic plate or inside the ceramic plate, wherein: a bottomed hole is made, being directed from the opposite side to a heating surface for heating an object to be heated, toward the heating surface; the bottom of said bottomed hole is formed relatively nearer to the heating surface than the heating element; and a temperature-measuring element is set up in this bottomed hole.

公开(公告)号：US20030164365A1

公开(公告)日：2003-09-04

申请号：US10387452

申请日：2003-03-14

申请人： IBIDEN CO., LTD.

发明人： Yasutaka Ito ,  Yasuji Hiramatsu

IPC分类号： H05B003/68

CPC分类号： H01L21/67103

摘要： The present invention has its object to provide a ceramic heater which has a high thermal conductivity so that the surface temperature of the heater plate promptly follows the temperature change of the heating element to control the temperature of the wafer-heating surface with high efficiency and the thermal diffusion of impurity from the ceramic heater can be successfully prevented. This invention provides a ceramic heater comprising a nitride ceramic substrate and a heating element either on the surface or internally of said substrate wherein said nitride ceramic board contains an element other than constituent elements of nitride ceramics and a work-heating surface has the JIS B 0601 surface roughness of Rmaxnull0.2 to 200 nullm.

摘要翻译： 本发明的目的是提供一种具有高导热性的陶瓷加热器，使得加热板的表面温度迅速地跟随加热元件的温度变化，以高效率地控制晶片加热面的温度， 能够成功地防止来自陶瓷加热器的杂质的热扩散。 本发明提供了一种陶瓷加热器，其包括在所述基板的表面或内部的氮化物陶瓷基板和加热元件，其中所述氮化物陶瓷板包含除了氮化物陶瓷的构成元素之外的元素，加热表面具有JIS B 0601 Rmax的表面粗糙度= 0.2〜200μm。