Abstract:
An electronic device including a functional unit, a storage unit, and a data transmission apparatus. The functional unit provides a function to a superordinate electronic apparatus. The data transmission apparatus transmits data from the storage unit to the functional unit. The storage unit includes a plurality of memory cells and an error correction unit configured to generate a set of correction data for a set of payload data, to store the set of correction data in the memory cells, to read the set of payload data and the set of correction data from the memory cells in response to an individual read request from the data transmission apparatus, to correct the set of payload data and the set of correction data using the set of correction data, and to make both the corrected payload data and the corrected correction data available for the data transmission apparatus.
Abstract:
A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts.
Abstract:
According to various embodiments, an electronic device is described, comprising a device input for connecting an analog signal source, an analog-to-digital converter having an analog-to-digital converter input connected to the device input, an alternating current source configured to supply an alternating current to the analog-to-digital-converter input and a detection circuit configured to store a reference for an amplitude of a voltage signal at the analog-to-digital-converter input caused by the alternating current, receive an output of the analog-to-digital converter, determine the amplitude of the voltage signal at the analog-to-digital-converter input caused by the alternating current by filtering the output of the analog-to-digital converter and output an error signal if the reference for the amplitude differs from the determined amplitude by more than a predetermined threshold.
Abstract:
A memory system having a flexible read reference is disclosed. The system includes a memory partition, a failcount component, and a controller. The memory partition includes a plurality of memory cells. The failcount component is configured to generate failcounts in response to read operations of the memory partition. The controller is configured to calibrate a reference value for the memory partition by utilizing the failcounts.
Abstract:
A circuit for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The circuit includes a current determining circuit configured to determine a cell current and a cell current change rate of at least one of the cells; and a control circuit configured to: determine whether the cell current change rate is outside of a cell current change rate predefined range; and perform a predetermined action if the control circuit determination is positive.
Abstract:
Systems, methods, circuits, and devices for data protection are provided. In one example, a data processing device incudes a Physical Unclonable Function (PUF) source that is configured to generate PUF values, a bus, a plurality of bus access components that are configured to access the bus, and a masking information generation circuit. The masking information generation circuit is configured to generate masking information for at least one pair of bus access components using at least one PUF value and to transmit said information to the bus access components. The pair is configured in such a way that one bus access component masks the data according to the masking information generated for the pair before the data is sent over the bus and the other bus access component de-masks the data received over the bus according to the masking information generated for the pair.
Abstract:
Systems, methods, and circuitries are provided for checking integrity of code received from an external memory. In one example, a system includes a non-volatile memory and a controller. The non-volatile memory includes a first partition configured to store first data corresponding to program code and a second partition configured to store second data corresponding to a copy of the first data. The controller that includes a processor and comparator circuitry. The comparator circuitry is configured to receive a portion of the first data and a corresponding portion of the second data, compare the portion of the first data to the portion of the second data, when the portion of the first data matches the portion of the second data, provide the portion of the first data to the processor, and when the portion of the first data does not match the portion of the second data, generate an alarm signal.
Abstract:
An integrated circuit with self-test circuit is provided. The integrated circuit includes at least one logic circuit, at least one input storage element for storing work data, at least one output storage element, an input test storage element for storing test data, and at least one output test storage element, wherein the logic circuit is selectively connected to the input storage element on the input side, such that the input storage element provides the work data to the logic circuit, or is connected to the input test storage element on the input side, such that the input test storage element provides the test data to the logic circuit, wherein the logic circuit is further connected to the output storage element and the output test storage element on the output side, such that the logic circuit feeds data to the output storage element and/or to the output test storage element, and wherein the output storage element is configured to process the data from the logic circuit if the work data are provided to the logic circuit, and not to process the data from the logic circuit if the test data are provided to the logic circuit.
Abstract:
A method for monitoring a resistive memory having an array of cells coupled between respective bitlines and respective wordlines. The method includes determining, by a current determining circuit, a cell current and a cell current change rate of at least one of the cells; determining, by a control circuit, whether the cell current change rate is outside of a cell current change rate predefined range; performing, by the control circuit, a predetermined action if the control circuit determination is positive; and storing, in a memory, the determined cell current at predetermined times, and to store the determined cell current change rate.
Abstract:
Embodiments relate to memory devices and methods for firmly programming at least a portion of a plurality of electronically programmable and erasable nonvolatile memory cells in a processing of the nonvolatile memory devices.