IC ASSEMBLIES INCLUDING DIE PERIMETER FRAMES SUITABLE FOR CONTAINING THERMAL INTERFACE MATERIALS

    公开(公告)号:US20210202348A1

    公开(公告)日:2021-07-01

    申请号:US16727770

    申请日:2019-12-26

    Abstract: An integrated circuit (IC) assembly comprising an IC die and a frame material that has been dispensed over the assembly substrate to be further adjacent to a perimeter edge of the IC die. The frame material may be selected to have flow properties that minimize slump, for example so a profile of a transverse cross-section through the frame material may retain convex curvature. The frame material may be cured following dispense, and upon application of a thermal interface material (TIM), the frame material may and act as a barrier, impeding flow of the TIM. The frame material may be compressed by force applied through an external thermal solution, such as a heat sink, to ensure good contact to the TIM.

    Enhanced base die heat path using through-silicon vias

    公开(公告)号:US12266589B2

    公开(公告)日:2025-04-01

    申请号:US18635894

    申请日:2024-04-15

    Abstract: Embodiments of the present disclosure may generally relate to systems, apparatuses, techniques, and/or processes directed to packages that include stacked dies that use thermal conductivity features including thermally conductive through silicon vias (TSVs) filled with thermally conductive material located in passive areas of a first die to route heat from a first die away from a second die that is coupled with the first die. In embodiments, the first die may be referred to as a base die. Embodiments may include thermal blocks in the form of dummy dies that include TSVs at least partially filled with thermal energy conducting material such as copper, solder, or other alloy.

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