公开(公告)号：US20140203336A1

公开(公告)日：2014-07-24

申请号：US14164555

申请日：2014-01-27

Applicant: International Business Machines Corporation

Inventor： ALFRED GRILL ,  THOMAS JASPER HAIGH ,  KELLY MALONE ,  SON VAN NGUYEN ,  VISHNUBHAI VITTHALBHAI PATEL ,  HOSADURGA SHOBHA

IPC: H01L29/51 ,  H01L23/532

CPC classification number: H01L29/511 ,  C08J9/26 ,  C08J2201/042 ,  C08J2383/04 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L23/5329 ,  H01L29/515 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric material incorporating a graded carbon adhesion layer whereby the content of C increases with layer thickness and a multiphase ultra low k dielectric comprising a porous SiCOH dielectric material having a k less than 2.7 and a modulus of elasticity greater than 7 GPa is described. A semiconductor integrated circuit incorporating the above dielectric material in interconnect wiring is described and a semiconductor integrated circuit incorporating the above multiphase ultra low k dielectric in a gate stack spacer of a FET is described.

Abstract translation: 描述了包含梯度碳粘附层的电介质材料，其中C的含量随着层厚度的增加而增加，并且包括具有k小于2.7的弹性模量大于7GPa的多孔SiCOH介电材料的多相超低k电介质。 描述了在互连布线中并入上述介电材料的半导体集成电路，并描述了在FET的栅叠层间隔物中并入上述多相超低k电介质的半导体集成电路。

公开(公告)号：US20170186881A1

公开(公告)日：2017-06-29

申请号：US15237350

申请日：2016-08-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/786 ,  H01L29/16 ,  H01L21/04 ,  H01L21/3213 ,  H01L43/14 ,  H01L29/45 ,  H01L29/66 ,  H01L51/05 ,  H01L43/06 ,  H01L51/00 ,  H01L29/08

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20140374702A1

公开(公告)日：2014-12-25

申请号：US14480472

申请日：2014-09-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/775 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

Abstract translation: 形成霍尔效应器件和场效应晶体管，其中结合有诸如碳纳米管和/或石墨烯的碳基纳米结构层与其上形成的牺牲金属层，以在加工期间保护碳基纳米结构层。

公开(公告)号：US20140225193A1

公开(公告)日：2014-08-14

申请号：US13654416

申请日：2012-10-18

Applicant: International Business Machines Corporation

Inventor： JACK O. CHU ,  CHRISTOS D. DIMITRAKOPOULOS ,  ALFRED GRILL ,  TIMOTHY J. McARDLE ,  DIRK PFEIFFER ,  KATHERINE L. SAENGER ,  ROBERT L. WISNIEFF

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/775 ,  H01L21/02 ,  H01L21/02606 ,  H01L21/30 ,  H01L21/3081 ,  H01L29/0673 ,  H01L29/66 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/78648 ,  H01L29/78684 ,  H01L43/065 ,  H01L43/14 ,  H01L51/00 ,  H01L51/0018 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

Abstract: Hall effect devices and field effect transistors are formed incorporating a carbon-based nanostructure layer such as carbon nanotubes and/or graphene with a sacrificial metal layer formed there over to protect the carbon-based nanostructure layer during processing.

公开(公告)号：US20180204759A1

公开(公告)日：2018-07-19

申请号：US15405440

申请日：2017-01-13

Applicant: International Business Machines Corporation

Inventor： ROBERT L. BRUCE ,  ALFRED GRILL ,  ERIC A. JOSEPH ,  TEDDIE P. MAGBITANG ,  HIROYUKI MIYAZOE ,  DEBORAH A. NEUMAYER

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Integrated circuits including at least two electrically conductive interconnect lines and methods of manufacturing generally include a surface of the integrated circuit. At least two electrically conductive interconnect lines are separated by a space of less than 90 nm and are formed on the surface. Each of the at least two interconnect lines includes a metal cap, a copper conductor having an average grain size greater than a line width of the interconnect. A liner layer is provided, wherein the liner layer and the metal cap encapsulate the copper conductor. A dielectric layer overlaying the at least two electrically conductive interconnect lines and extending along sidewalls thereof is provided, wherein the dielectric layer is configured to provide an airgap between the at least two interconnect lines at the spacing.

公开(公告)号：US20130087923A1

公开(公告)日：2013-04-11

申请号：US13691129

申请日：2012-11-30

Applicant: International Business Machines Corporation

Inventor： STEPHEN M. GATES ,  ALFRED GRILL ,  SON V. NGUYEN ,  SATYANARAYANA V. NITTA

IPC: H01L29/06 ,  H01L23/538

CPC classification number: H01L29/06 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/76801 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/538 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An in-situ process is described incorporating plasma enhanced chemical vapor deposition comprising flowing at least one of a Si, Si═C, B, Si═B, Si═B═C, and B═C containing precursor, and a N containing precursors at first times and removing the N precursor at second times and starting the flow of an oxidant gas and a porogen gas into the chamber. A dielectric layer is described comprising a network having inorganic random three dimensional covalent bonding throughout the network which contains at least one SiCN, SiCNH, SiN, SiNH, BN, BNH, CBN, CBNH, BSiN, BSiNH, SiCBN and SiCBNH as a first component and a low k dielectric as a second component adjacent thereto.

Abstract translation: 描述了包含等离子体增强化学气相沉积的原位方法，其包括流动含有Si，Si = C，B，Si = B，Si = B = C和含有B = C的前体中的至少一种，以及含N前体 并且第二次除去N前体，并开始将氧化剂气体和致孔剂气体流入室中。 描述了一种介电层，其包括在整个网络中具有无机随机三维共价键的网络，其包含至少一种SiCN，SiCNH，SiN，SiNH，BN，BNH，CBN，CBNH，BSiN，BSiNH，SiCBN和SiCBNH作为第一组分 和作为与其相邻的第二组分的低k电介质。