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    FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE
    1.
    发明申请
    FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE 有权
    形成大规模单晶石墨

    公开(公告)号：US20150228728A1

    公开(公告)日：2015-08-13

    申请号：US14691270

    申请日：2015-04-20

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： CHRISTOS D. DIMITRAKOPOULOS ,  KEITH E. FOGEL ,  JEEHWAN KIM ,  HONGSIK PARK

    IPC: H01L29/16 ,  H01L23/532

    CPC classification number: H01L29/1606 ,  B32B9/007 ,  B32B9/041 ,  B32B38/10 ,  B32B2307/202 ,  B32B2307/704 ,  C01B32/188 ,  H01L21/0272 ,  H01L21/2007 ,  H01L23/53276 ,  H01L2924/0002 ,  Y10T156/11 ,  Y10T156/1153 ,  Y10T428/24612 ,  Y10T428/26 ,  H01L2924/00

    Abstract: A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate.

    Abstract translation: 二维材料的转印方法包括在第一基板上形成二维材料的扩散层。 扩散层具有至少一个单层。 在扩散层上形成应力层。 应力层被配置为将应力施加到扩散层的最接近的单层。 最接近的单层通过机械分裂扩散层而被剥离，其中至少最接近的单层保留在应力层上。 将至少一个单层冲压到第二基底上以将至少一个单层上的二维材料的残余物粘附到第二基底上，以在应力层上提供单个单层。 将单个单层转移到第三底物。

    AUTHENTICATION USING GRAPHENE BASED DEVICES AS PHYSICAL UNCLONABLE FUNCTIONS
    6.
    发明申请
    AUTHENTICATION USING GRAPHENE BASED DEVICES AS PHYSICAL UNCLONABLE FUNCTIONS 有权
    使用基于石墨的设备作为物理不可靠功能的认证

    公开(公告)号：US20140159040A1

    公开(公告)日：2014-06-12

    申请号：US13712455

    申请日：2012-12-12

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

    Inventor： CHRISTOS D. DIMITRAKOPOULOS ,  Dirk Pfeiffer ,  Joshua T. Smith

    IPC: H01L23/00 ,  H01L21/02

    CPC classification number: H01L23/573 ,  H01L21/02 ,  H01L21/02225 ,  H01L23/53276 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present disclosure relates to secure devices having a physical unclonable function and methods of manufacturing such secure devices. One device includes at least one graphene layer representing a physical unclonable function and a measurement circuit for measuring at least one property of the at least one graphene layer. Another device includes at least a first graphene layer and a second graphene layer representing a physical unclonable function, where one of the graphene layers has been subjected to a variability enhancement such that a measurable property is different for each of the layers. A method includes providing a substrate for a secure device and providing at least one graphene layer on the substrate, the at least one graphene layer representing a physical unclonable function. The providing of the at least one graphene layer includes applying at least one variability enhancement to the at least one graphene layer.

    Abstract translation: 本公开涉及具有物理不可克隆功能的安全设备和制造这种安全设备的方法。 一个装置包括表示物理不可克隆功能的至少一个石墨烯层和用于测量至少一个石墨烯层的至少一个性质的测量电路。 另一装置包括至少第一石墨烯层和表示物理不可克隆功能的第二石墨烯层，其中石墨烯层中的一个已经经受可变性增强，使得每个层的可测量性质不同。 一种方法包括提供用于安全装置的衬底并且在衬底上提供至少一个石墨烯层，所述至少一个石墨烯层表示物理不可克隆功能。 提供至少一个石墨烯层包括对至少一个石墨烯层施加至少一个可变性增强。

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