摘要:
Systems and methods are provided to mitigate excess die attachment material accrual, and parasitic conductive paths formed thereby. A die attachment material (e.g., solder) is melted using a combination of localized heat sources and ultrasonic energy. The heat sources bring the die attachment material close to its melting point, which reduces an amount of bonding force associated with purely ultrasonic bonding techniques. An ultrasonic transducer brings the die attachment material the rest of the way up to its melting point, which reduces the overall temperature that the die and/or sensitive components thereon endure during the bonding process.
摘要:
A surface mount light emitting package includes a chip carrier having top and bottom principal surfaces. At least one light emitting chip is attached to the top principal surface of the chip carrier. A lead frame attached to the top principal surface of the chip carrier. When surface mounted to an associated support, the bottom principal surface of the chip carrier is in thermal contact with the associated support without the lead frame intervening therebetween.
摘要:
A light emitting diode (LED) device (A) and processes for its manufacture are provided. The LED device (A) includes a light emitting chip or die (10) and an encapsulant (22) surrounding the same. The encapsulant (22) is substantially spherical in shape, and the die (10) is preferably located at a substantial center of the encapsulant (22). An electrically conductive path extends from the chip or die (10) to a periphery of the encapsulant (22) such that the chip/die (10) can be selectively energized to produce light by applying electricity to the electrically conductive path at the periphery of the encapsulant (22). Preferably, the encapsulant (22) is chosen to have an index of refraction as close as possible to the higher of an index of refraction of the die's semiconductor material and an index of refraction of the die's substrate (12).
摘要:
A light emitting diode (10) has a backside and a front-side with at least one n-type electrode (14) and at least one p-type electrode (12) disposed thereon defining a minimum electrodes separation (delectrodes). A bonding pad layer (50) includes at least one n-type bonding pad (64) and at least one p-type bonding pad (62) defining a minimum bonding pads separation (dpads) that is larger than the minimum electrodes separation (delectrodes). At least one fanning layer (30) interposed between the front-side of the light emitting diode (10) and the bonding pad layer (50) includes a plurality of electrically conductive paths passing through vias (34, 54) of a dielectric layer (32, 52) to provide electrical communication between the at least one n-type electrode (14) and the at least one n-type bonding pad (64) and between the at least one p-type electrode (12) and the at least one p-type bonding pad (62).
摘要:
In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.
摘要:
In a method for fabricating a flip-chip light emitting diode device, epitaxial layers (14, 114) are deposited on a growth substrate (16, 116) to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die (10, 110). The device die (10, 110) is flip chip bonded to a mount (12, 112). The flip chip bonding includes securing the device die (10, 110) to the mount (12, 112) by bonding at least one electrode (20, 22, 120) of the device die (10, 110) to at least one bonding pad (26, 28, 126) of the mount (12, 112). Subsequent to the flip chip bonding, a thickness of the growth substrate (16, 116) of the device die (10, 110) is reduced.
摘要:
At least two light emitting diodes emit a non-parallel light beam. A condensing system, operationally coupled with the light emitting diodes, receives the emitted non-parallel light beam and converts the received non-parallel light beam into a parallel light beam. A non-imaging concentrator includes an input surface which collects the parallel light beam, and an output surface, which includes phosphor material and outputs light.
摘要:
In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.
摘要:
First and second light emitting diode (LED) arrays, which each includes a corresponding number of LED dies, are disposed on a substrate proximately and substantially parallel to one another. Each pair of substantially paralleled LED dies of the first and second arrays is covered by substantially transparent optical encapsulant. The optical encapsulant is one of covered by a reflective layer for a UV to visible spectral region and shaped for total internal light reflection. The substrate is diced along an axis extending in parallel and between the first and second LED arrays.
摘要:
In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10′, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36′) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.