METHOD FOR PROVIDING MOBILE SERVICE USING CODE-PATTERN
    1.
    发明申请
    METHOD FOR PROVIDING MOBILE SERVICE USING CODE-PATTERN 有权
    使用代码模式提供移动服务的方法

    公开(公告)号:US20120286030A1

    公开(公告)日:2012-11-15

    申请号:US13560911

    申请日:2012-07-27

    Abstract: A method and apparatus for providing a mobile service with the use of a code pattern is disclosed In one embodiment, the method comprising: taking a photograph of a code pattern image, decoding the photographed code pattern image so as to obtain code information, extracting uniform resourse locator (URL) information corresponding to the code information, transmitting a content information request message to a service provider server corresponding to the URL information, and receiving content information corresponding to the URL information from the service provider server. According to embodiments of the present invention, it is possible to provide various and convenient mobile services to mobile terminal users using a mobile terminal, having a camera, and a code pattern containing the URL information.

    Abstract translation: 公开了一种使用代码图案提供移动业务的方法和装置。在一个实施例中,该方法包括:拍摄代码图像图像,解码所拍摄的代码图形图像,以获得代码信息,提取均匀 对应于代码信息的资源定位符(URL)信息,向与URL信息相对应的服务提供者服务器发送内容信息请求消息,以及从服务提供商服务器接收与URL信息对应的内容信息。 根据本发明的实施例,可以使用具有相机的移动终端和包含URL信息的代码模式向移动终端用户提供各种和方便的移动服务。

    SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM FOR COMPENSATING CROSSTALK
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM FOR COMPENSATING CROSSTALK 失效
    用于补偿CROSSTALK的半导体存储器件和半导体存储器系统

    公开(公告)号:US20090190421A1

    公开(公告)日:2009-07-30

    申请号:US12355421

    申请日:2009-01-16

    CPC classification number: G11C7/02 G11C7/1048 G11C7/12 G11C29/02 G11C29/025

    Abstract: A semiconductor memory device and a semiconductor memory system. The semiconductor memory device includes channels configured to transmit signals from a transmitter to a receiver, and a crosstalk compensator. The crosstalk compensator may be connected between the channels to compensate for crosstalk. The crosstalk compensator may comprise a capacitor connected in parallel between the channels, and a switching unit connected between the capacitor and one of the channels. The switching unit may control connections or disconnections between the capacitor and the channel. Therefore, the semiconductor memory device and the semiconductor memory system compensate for crosstalk occurring between transmitted signals that are out of phase with each other.

    Abstract translation: 半导体存储器件和半导体存储器系统。 半导体存储器件包括被配置为将信号从发送器发送到接收器的通道和串扰补偿器。 串扰补偿器可以连接在通道之间以补偿串扰。 串扰补偿器可以包括在通道之间并联连接的电容器,以及连接在电容器和其中一个通道之间的开关单元。 开关单元可以控制电容器和通道之间的连接或断开。 因此,半导体存储器件和半导体存储器系统补偿在彼此不同相位的发射信号之间发生的串扰。

    THERMOSETTING RESIN, COMPOSITION INCLUDING THE SAME, AND PRINTED BOARD FABRICATED USING THE SAME
    3.
    发明申请
    THERMOSETTING RESIN, COMPOSITION INCLUDING THE SAME, AND PRINTED BOARD FABRICATED USING THE SAME 有权
    热固性树脂,包括其的组合物和使用其制成的印刷板

    公开(公告)号:US20110236701A1

    公开(公告)日:2011-09-29

    申请号:US12859425

    申请日:2010-08-19

    Abstract: A thermosetting resin including at least one repeating unit represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, A is derived from a phenolic moiety, an anilinic moiety, or a combination thereof, L is C(O)O, C(O)NR′ wherein R′ is hydrogen, a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C6 to C30 aryl group, or a substituted or unsubstituted C6 to C30 aryloxy group, an aromatic ester, an aromatic ester-imide, an aromatic ester-amide, an aromatic amide, or a combination thereof, Z is a substituted or unsubstituted aliphatic group including a double bond or a triple bond, a substituted or unsubstituted alicyclic group including a double bond or a triple bond, a substituted or unsubstituted aryl group including a double bond or a triple bond, (iso)cyanate, a derivative thereof, or a combination thereof, and n is an integer ranging from 1 to about 4.

    Abstract translation: 一种热固性树脂,其包含至少一种由以下化学式1表示的重复单元:其中,在化学式1中,A衍生自酚部分,苯胺部分或其组合,L为C(O)O,C (O)NR',其中R'是氢,取代或未取代的C 1至C 20烷基,取代或未取代的C 6至C 30芳基,或取代或未取代的C 6至C 30芳氧基,芳族酯,芳族酯 - 酰亚胺,芳香族酯 - 酰胺,芳香族酰胺或其组合,Z为取代或未取代的包含双键或三键的脂族基团,取代或未取代的包含双键或三键的脂环族基团, 取代或未取代的包括双键或三键的芳基,(iso)氰酸酯,其衍生物或其组合,n是1至约4的整数。

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