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公开(公告)号：US5365477A
公开(公告)日：1994-11-15
申请号：US899538
申请日：1992-06-16
IPC分类号： H01L27/06 , H01L27/102 , H01L29/92 , H01L29/161
CPC分类号： H01L27/0605 , H01L27/1023 , H01L29/92
摘要： A vertically integrated DRAM cell having a storage time of at least 4.5 hours at room temperature, formed from a wide-bandgap semiconductor such as GaAs or AlGaAs, in which an n-p-n bipolar access transistor is merged with a p-n-p storage capacitor, with the middle p-n layers being common to both. Similarly, a p-n-p transistor can be merged with an n-p-n storage capacitor.
摘要翻译： 由GaAs或AlGaAs等宽带隙半导体形成的室温下至少4.5小时的垂直集成DRAM单元，其中npn双极存取晶体管与pnp存储电容器合并，中间pn 两层都是共同的。 类似地，p-n-p晶体管可以与n-p-n存储电容器合并。
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公开(公告)号：US06362495B1
公开(公告)日：2002-03-26
申请号：US09264156
申请日：1999-03-05
申请人： Kipp J. Schoen , Jason P. Henning , Jerry M. Woodall , James A. Cooper, Jr. , Michael R. Melloch
发明人： Kipp J. Schoen , Jason P. Henning , Jerry M. Woodall , James A. Cooper, Jr. , Michael R. Melloch
IPC分类号： H01L310312
CPC分类号： H01L29/1608 , H01L29/47 , H01L29/872 , H01L31/0312
摘要： A dual-metal-trench silicon carbide Schottky pinch rectifier having a plurality of trenches formed in an n-type SiC substrate, with a Schottky contact having a relatively low barrier height on a mesa defined between adjacent ones of the trenches, and a Schottky contact having a relatively high barrier height at the bottom of each trench. The same metal used for the Schottky contact in each trench is deposited over the Schottky contact on the mesa. A simplified fabrication process is disclosed in which the high barrier height metal is deposited over the low barrier height metal and then used as an etch mask for reactive ion etching of the trenches to produce a self-aligned low barrier contact.
摘要翻译： 一种双金属沟槽碳化硅肖特基压紧整流器，其具有形成在n型SiC衬底中的多个沟槽，肖特基接触在相邻沟槽之间限定的台面上具有相对较低的势垒高度，以及肖特基接触 在每个沟槽的底部具有较高的势垒高度。 在每个沟槽中用于肖特基接触的相同金属沉积在台面上的肖特基接触件上。 公开了一种简化的制造工艺，其中高阻挡高度金属沉积在低阻挡高度金属上，然后用作蚀刻掩模以用于沟槽的反应离子蚀刻以产生自对准低阻挡接触。
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3.发明授权
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译： 光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。 身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。 捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数 材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。 在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹 所述第一和第二光束的交叉。
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公开(公告)号：US5471948A
公开(公告)日：1995-12-05
申请号：US240880
申请日：1994-05-11
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L21/20
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。
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公开(公告)号：US4612085A
公开(公告)日：1986-09-16
申请号：US722250
申请日：1985-04-10
IPC分类号： H01L21/302 , C23C16/04 , C23C16/48 , G03F7/004 , H01L21/268 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： C23C16/483 , C23C16/047 , G03F7/004 , H01L21/268 , Y10S438/98
摘要： Formation of a plasma etch mask on a film on a substrate by photodecomposition of a gas at selective portions of the film's surface to deposit etch mask material and form the etch mask is disclosed. The photodecomposition by blanket illumination through a photomask and by direct write with a computer controlled laser are both disclosed. The formation of the etch mask can be immediately followed by the plasma etch without breaking vacuum.
摘要翻译： 公开了通过在膜的表面的选择性部分处对气体进行光分解以沉积蚀刻掩模材料并形成蚀刻掩模来在基底上的膜上形成等离子体蚀刻掩模。 通过光掩模的毯式照明和通过计算机控制的激光直接写入的光分解都被公开。 蚀刻掩模的形成可以紧接着进行等离子体蚀刻而不破坏真空。
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6.发明授权Compound semiconductor having metallic inclusions and devices fabricated therefrom 失效具有金属夹杂物的复合半导体及其制造的器件
公开(公告)号：US5371399A
公开(公告)日：1994-12-06
申请号：US104423
申请日：1993-08-09
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L29/48
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。
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公开(公告)号：US4437031A
公开(公告)日：1984-03-13
申请号：US431683
申请日：1982-09-30
CPC分类号： H03H9/14547 , G06G7/195 , H03H9/02874 , H03H9/14544 , H03H9/02574
摘要： A separate comb transducer is disclosed in a ZnO/Si SAW device to enable doubling of the possible operating frequency for a given photolithographic capability of the device. Frequency doubling is made possible by a single-phase structure having conductive and non-conductive surfaces equal to one-half of the SAW wavelength. By connection of two such structures in parallel, a balanced separate comb transducer is achieved for reducing signal levels due to direct coupling that otherwise occurs in the single-phase structure. Separate comb grating transducers are also disclosed to enable fabrication of higher frequency MZOS convolvers, with both the separate comb transducer and separate comb grating transducer being shown utilized in both the Rayleigh and Sezawa modes.
摘要翻译： 在ZnO / Si SAW器件中公开了一种独立的梳状变换器，以便能够对器件的给定光刻能力加倍可能的工作频率。 通过具有等于SAW波长的一半的导电和非导电表面的单相结构使倍频成为可能。 通过并联连接两个这样的结构，实现了平衡的分离梳状换能器，用于降低由于在单相结构中发生的直接耦合引起的信号电平。 还公开了单独的梳状光栅换能器，以使得能够制造更高频率的MZOS卷积器，其中分别的梳状换能器和单独的梳状光栅传感器都被示出用于瑞利和塞泽瓦模式。
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公开(公告)号：US06515302B1
公开(公告)日：2003-02-04
申请号：US09446683
申请日：2000-04-12
IPC分类号： H01L310312
CPC分类号： H01L29/7816 , H01L21/7602 , H01L29/1079 , H01L29/1608 , H01L29/7393
摘要： An insulated gate field effect transistor is disclosed. The transistor includes a semi-insulating silicon carbide substrate, an epitaxial layer of silicon carbide layer adjacent the semi-insulating substrate for providing a drift region having a first conductivity type, and source and drain regions in the epitaxial layer having the same conductivity type as the drift region. A channel region is in the epitaxial layer, has portions between the source and the drain regions, and has the opposite conductivity type from the source and drain regions. The transistor includes contacts to the epitaxial layer for the source, drain and channel regions, an insulating layer over the channel region of the epitaxial layer, and a gate contact adjacent the insulating layer and the channel region.
摘要翻译： 公开了一种绝缘栅场效应晶体管。 晶体管包括半绝缘碳化硅衬底，邻近半绝缘衬底的碳化硅层的外延层，用于提供具有第一导电类型的漂移区，外延层中的源区和漏区具有与 漂移区域。 沟道区在外延层中，在源极和漏极区之间具有部分，并且具有与源极和漏极区相反的导电类型。 晶体管包括用于源极，漏极和沟道区的外延层的接触，在外延层的沟道区上方的绝缘层以及与绝缘层和沟道区相邻的栅极接触。
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