公开(公告)号：US5471948A

公开(公告)日：1995-12-05

申请号：US240880

申请日：1994-05-11

申请人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M. Woodall

发明人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M. Woodall

IPC分类号： H01L31/0232 ,  H01L31/105 ,  H01L21/20

CPC分类号： H01L31/0232 ,  H01L31/105

摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.

摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。

公开(公告)号：US5371399A

公开(公告)日：1994-12-06

申请号：US104423

申请日：1993-08-09

申请人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M Woodall

发明人： Jeremy Burroughes ,  Rodney T. Hodgson ,  David T. McInturff ,  Michael R. Melloch ,  Nobuo Otsuka ,  Paul M. Solomon ,  Alan C. Warren ,  Jerry M Woodall

IPC分类号： H01L31/0232 ,  H01L31/105 ,  H01L29/48

CPC分类号： H01L31/0232 ,  H01L31/105

摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.

摘要翻译： 具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。 光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。 对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。 在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。

公开(公告)号：US4920069A

公开(公告)日：1990-04-24

申请号：US183489

申请日：1988-04-15

申请人： Eric R. Fossum ,  Peter D. Kirchner ,  George D. Pettit ,  Alan C. Warren ,  Jerry M. Woodall

发明人： Eric R. Fossum ,  Peter D. Kirchner ,  George D. Pettit ,  Alan C. Warren ,  Jerry M. Woodall

IPC分类号： H01L21/20 ,  H01L21/263

CPC分类号： H01L21/2633 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02639 ,  Y10S148/017 ,  Y10S148/05 ,  Y10S148/065 ,  Y10S148/135 ,  Y10S148/169

摘要： Submicron structure fabrication is accomplished by providing vapor chemical erosion of a compound crystal by suppressing the more volatile elements so that the less volatile element is provided with an anti-agglomeration and erosion rate limiting capability which can be followed by subsequent regrowth in the same environment. The erosion is sensitive to crystallographic orientation.

摘要翻译： 亚微米结构的制造是通过抑制更多的挥发性元素来提供化合物晶体的蒸汽化学腐蚀来实现的，从而使挥发性较低的元件具有抗附聚和侵蚀速率限制能力，随后可以在相同的环境中随后再生长。 侵蚀对晶体取向敏感。

公开(公告)号：US5021365A

公开(公告)日：1991-06-04

申请号：US322583

申请日：1989-03-13

申请人： Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall ,  Steven L. Wright

发明人： Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall ,  Steven L. Wright

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L29/45 ,  H01L29/47 ,  H01L29/51

CPC分类号： H01L29/517 ,  H01L21/28264 ,  H01L21/31654 ,  H01L29/456 ,  H01L29/475 ,  Y10S148/056 ,  Y10S148/081 ,  Y10S148/118

摘要： Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

摘要翻译： 通过在半导体的表面上提供不含阴离子物质的阳离子氧化物以实现平带性能并且将一些阴离子物质局部包含在屏障中来实现费米能级钉扎问题的控制和化合物半导体中的平带表面性能的产生 性能，使得氧化物和金属功能响应性在MOSFET，MESFET和不同功能金属FET结构中的结构和性能方面是可用的。 阳离子氧化镓通过照射期间的氧化物生长和用氧化水冲洗而在GaAs上产生。 氧化用于产生阴离子和阳离子物质，而漂洗过程选择性地除去所有阴离子物质。

公开(公告)号：US5221367A

公开(公告)日：1993-06-22

申请号：US227955

申请日：1988-08-03

申请人： Matthew F. Chisholm ,  Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall

发明人： Matthew F. Chisholm ,  Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall

IPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/68 ,  H01L21/20 ,  H01L21/203 ,  H01L29/201

CPC分类号： H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S438/933 ,  Y10S438/938

摘要： Heterostructures having a large lattice mismatch between an upper epilayer and a substrate and a method of forming such structures having a thin intermediate layer are disclosed. The strain due to a lattice mismatch between the intermediate layer and the substrate is partially relieved by the formation of edge type dislocations which are localized and photoelectrically inactive. Growth of the intermediate layer is interrupted before it reaches the thickness at which the left over strain is relieved by 60 degree type threading dislocations. The upper epilayer is then grown in an unstrained and defect-free condition upon the intermediate layer where the unstrained lattice constant of the epilayer is about the same as the partially relieved strain lattice constant or the intermediate layer. An unstrained defect-free epilayer of InGaAs has been grown on a GaAs substrate with an intermediate layer 3-10 nm in thickness of InAs. Other large mismatch systems are disclosed, including, GaAs on Si with an intermediate layer of GaInAs.

公开(公告)号：US4843450A

公开(公告)日：1989-06-27

申请号：US874738

申请日：1986-06-16

申请人： Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall ,  Steven L. Wright

发明人： Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall ,  Steven L. Wright

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L29/45 ,  H01L29/47 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/513 ,  H01L21/28264 ,  H01L21/31654 ,  H01L29/456 ,  H01L29/475 ,  H01L29/51

摘要： Control of the Fermi level pinning problem and the production of flat band surface performance in compound semiconductors is achieved by providing a cationic oxide free of anionic species on the surface of the semiconductor for flat band performance and with a localized inclusion of some anionic species for barrier performance so that oxide and metal work function responsiveness is available in structure and performance in MOSFET, MESFET and different work function metal FET structures. A cationic gallium oxide is produced on GaAs by oxide growth during illumination and while being rinsed with oxygenated water. The oxidation is used to produce both anionic and cationic species while the rinsing process selectively removes all the anionic species.

摘要翻译： 通过在半导体的表面上提供不含阴离子物质的阳离子氧化物以实现平带性能并且将一些阴离子物质局部包含在屏障中来实现费米能级钉扎问题的控制和化合物半导体中的平带表面性能的产生 性能，使得氧化物和金属功能响应性在MOSFET，MESFET和不同功能金属FET结构中的结构和性能方面是可用的。 阳离子氧化镓通过照射期间的氧化物生长和用氧化水冲洗而在GaAs上产生。 氧化用于产生阴离子和阳离子物质，而漂洗过程选择性地除去所有阴离子物质。

公开(公告)号：US4811077A

公开(公告)日：1989-03-07

申请号：US64414

申请日：1987-06-18

申请人： Alan B. Fowler ,  John L. Freeouf ,  Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall

发明人： Alan B. Fowler ,  John L. Freeouf ,  Peter D. Kirchner ,  Alan C. Warren ,  Jerry M. Woodall

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/314 ,  H01L21/331 ,  H01L21/338 ,  H01L29/06 ,  H01L29/26 ,  H01L29/267 ,  H01L29/43 ,  H01L29/47 ,  H01L29/73 ,  H01L29/737 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L29/812 ,  H01L29/872 ,  H01L33/00 ,  H01L29/34

CPC分类号： H01L21/314 ,  Y10T428/12528

摘要： A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.