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1.发明授权
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译： 光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。 身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。 捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数 材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。 在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹 所述第一和第二光束的交叉。
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公开(公告)号：US5049955A
公开(公告)日：1991-09-17
申请号：US61036
申请日：1987-06-12
IPC分类号： H01L29/73 , H01L21/331 , H01L29/68 , H01L29/737 , H01L29/76
CPC分类号： H01L29/7606
摘要： A semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the electron gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
摘要翻译： 一种半导体器件，其中发射极材料组成和掺杂分布在邻近带偏移异质结界面的基底中产生电子气，基底中的电子气中的电子受到低屏障的限制，而弹道载体具有其动能 被控制以防止在偏置影响下的静电屏障的间隔散射提供邻近收集器的基部的基本上水平的导带。
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公开(公告)号：US4811077A
公开(公告)日：1989-03-07
申请号：US64414
申请日：1987-06-18
IPC分类号： H01L21/20 , H01L21/28 , H01L21/314 , H01L21/331 , H01L21/338 , H01L29/06 , H01L29/26 , H01L29/267 , H01L29/43 , H01L29/47 , H01L29/73 , H01L29/737 , H01L29/78 , H01L29/786 , H01L29/80 , H01L29/812 , H01L29/872 , H01L33/00 , H01L29/34
CPC分类号： H01L21/314 , Y10T428/12528
摘要： A surface termination of a compound semiconductor is provided wherein conditions are provided for a pristine surface to be retained in an unpinned condition and a surface layer of a non-metallic material is provided. A GaAs substrate is heated in an oxygen-free atmosphere at high temperature with hydrogen sulfide, producing a pristine surface with a coating of gallium sulfide covered with a 1,000 nanometer covering of low temperature plasma enhanced chemical vapor deposited silicon dioxide.
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公开(公告)号：US4426237A
公开(公告)日：1984-01-17
申请号：US311091
申请日：1981-10-13
IPC分类号： B01J19/08 , C01G15/00 , C01G28/00 , C30B23/02 , C30B31/20 , H01L21/02 , H01L21/203 , H01L21/363
CPC分类号： C30B23/02 , C30B29/40 , Y10S118/90 , Y10S438/961
摘要： When growing GaAs by molecular beam epitaxy (MBE), a typical related reaction acts to affix Ga.sub.2 O.sub.3 to the growth surface and hence incorporates such oxide contaminants in the epitaxial layer as it is grown. Such contaminants may yield crystals of poor electrical and optical properties. When Al is added to the Ga source crucible, the Ga.sub.2 O flux is reduced substantially thereby suppressing the formation of such oxide contaminants and remove a serious constraint to MBE growth. When doping GaAs with Mg to form a p-type GaAs layer, unity Mg doping efficiency is achieved by including 0.1% Al in the Ga effusion cell. Such an inclusion of Al improves the Mg doping efficiency by suppressing the formation of MgO, and allows MBE growth at lower substrate temperatures and at higher growth rates.
摘要翻译： 当通过分子束外延（MBE）生长GaAs时，典型的相关反应用于将Ga 2 O 3固定到生长表面，并因此在生长时在外延层中掺入这种氧化物污染物。 这种污染物可能产生不良的电学和光学性质的晶体。 当将Al添加到Ga源坩埚中时，Ga 2 O通量显着降低，从而抑制这种氧化物污染物的形成，并消除对MBE生长的严重限制。 当用Mg掺杂形成p型GaAs层时，通过在Ga注入单元中包含0.1％的Al来实现单位Mg掺杂效率。 Al的这种包含通过抑制MgO的形成提高了Mg掺杂效率，并且允许在较低的衬底温度和较高生长速率下MBE生长。
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公开(公告)号：US4436768A
公开(公告)日：1984-03-13
申请号：US411218
申请日：1982-08-25
IPC分类号： C04B35/583 , C04B41/00 , C04B41/45 , C04B41/51 , C04B41/53 , C04B41/80 , C04B41/81 , C04B41/88 , C04B41/91 , C23C14/24 , B05D3/02 , B05D5/00
CPC分类号： C23C14/243 , C04B35/583 , C04B41/0036 , C04B41/4505 , C04B41/5133 , C04B41/53 , C04B41/80 , C04B41/81 , C04B41/88 , C04B41/91
摘要： A refractory compound structure comprising a substrate of a compound which is a combination of a refractory and/or metallic element and a nonmetallic element and an elemental layer of the refractory and/or metallic element on the substrate is formed by heating the refractory compound in a vacuum at a decomposition temperature for the refractory compound.
摘要翻译： 包含耐火材料和/或金属元素和非金属元素的组合的化合物的基材和基材上的耐火材料和/或金属元素的元素层的耐火复合结构体是通过将耐火材料在 在耐火化合物的分解温度下进行真空。
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公开(公告)号：US4366493A
公开(公告)日：1982-12-28
申请号：US161611
申请日：1980-06-20
IPC分类号： H01L29/80 , H01L21/28 , H01L21/331 , H01L29/06 , H01L29/201 , H01L29/43 , H01L29/45 , H01L29/73 , H01L29/772 , H01L29/86 , H01L27/12
CPC分类号： H01L29/86 , H01L29/201 , H01L29/452 , H01L29/772
摘要： A semiconductor device of the ballistic type, wherein the carrier transport in the body of the device from one electrode to the other takes place essentially free of collisions, is fabricated with a semiconductor body having a long mean-free path, a body width between ohmic electrodes that is less than or equal to the product of the velocity of a carrier and the time to a collision, but more than the distance that will permit quantum mechanical tunnelling, an impressed voltage less than required for an intervalley carrier transition and having the ohmic external contact on each surface of the body free of any barrier to carrier flow. A ballistic type triode device is provided with a current modulating electrode included within the body of the device. The triode device body is of n type conductivity gallium arsenide containing a zinc doped p type conductivity gallium arsenide current modulating inclusion in the body and having, as at least one ohmic external contact, a graded bandgap indium gallium arsenide region.
摘要翻译： 一种防弹型半导体器件，其中将器件本体中的载体从一个电极输送至另一个电极的载体基本上没有碰撞发生，其半导体本体具有长的无平均通路，欧姆体之间的体宽 电极小于或等于载体速度与碰撞时间的乘积，但大于允许量子力学隧道的距离，外加电压小于间隔载波转换所需的电压，并具有欧姆 身体每个表面上的外部接触没有载体流动的任何障碍。 弹道式三极管装置设置有包括在装置主体内的电流调制电极。 三极管器件本体是n型导电性砷化镓，其含有锌掺杂的p型导电砷化镓电流，其调节包含在体内并具有作为至少一个欧姆外部接触的梯度带隙铟镓砷区域。
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公开(公告)号：US4638342A
公开(公告)日：1987-01-20
申请号：US419381
申请日：1982-09-17
IPC分类号： H01L29/80 , H01L21/338 , H01L29/772 , H01L29/812 , H01L29/56
CPC分类号： H01L29/8122 , H01L29/7722
摘要： An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.
摘要翻译： 一种在半导体结构中采用二维空间电荷调制的电子装置。 该器件在半导体本体上的德拜长度和远程定位的触点之间具有大致德拜长度的宽触点和整流触点彼此相邻定位。 整流触点的偏压将影响其他触点之间的导通。
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8.发明授权
公开(公告)号：US4597825A
公开(公告)日：1986-07-01
申请号：US718987
申请日：1985-04-02
IPC分类号： H01L21/314 , H01L23/29 , H01L23/31 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L23/3171 , H01L21/314 , H01L23/291 , H01L23/298 , H01L2924/0002
摘要： Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm.sup.2 while the GaAs immersed in a 1:1 HCl:H.sub.2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.
摘要翻译： 结晶化合物半导体被其最易挥发的元素层钝化以防止会妨碍进一步加工的氧化物的形成。 GaAs晶体设置有砷的表面层。 通过暴露于具有大于1.8eV的光子能量的光而形成砷层，功率密度为0.01至0.5瓦特/ cm2，而GaAs浸入1:1的HCl:H 2 O溶液中10-30分钟 。 中间处理钝化GaAs晶体可以在空气中储存和处理，并且通过低温烘烤除去As层。
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公开(公告)号：US4518846A
公开(公告)日：1985-05-21
申请号：US619106
申请日：1984-06-11
申请人： John L. Freeouf , Thomas N. Jackson
发明人： John L. Freeouf , Thomas N. Jackson
IPC分类号： C30B23/08 , C23C14/24 , C23C14/26 , C23C14/56 , C30B23/06 , C30B25/08 , H01L21/203 , C23C13/12
CPC分类号： C30B23/066 , C23C14/243 , C23C14/56
摘要： In a molecular beam epitaxy furnace, a heater is described for heating the interior of an effusion cell. The heater includes an outer cylindrical sleeve having one end connected to receive a vacuum, and an opposite end extending into the furnace. An inner sleeve is provided coaxial with the outer cylindrical sleeve, one end of the inner sleeve being sealed with the opposite end of the cylindrical sleeve. The inner sleeve extends along a portion of the outer cylindrical sleeve providing an interior vacuum chamber. A heating element is disposed between the cylindrical sleeve and inner sleeve which heats the interior crucible receiving chamber and a crucible therein bearing semiconductor constituent material such that the semiconductor constituent material effuses without contamination from the heating element.
摘要翻译： 在分子束外延炉中，描述了用于加热渗出室内部的加热器。 加热器包括外圆柱形套筒，其一端连接以接收真空，另一端延伸到炉中。 内套筒与外圆柱套筒同轴设置，内套筒的一端用圆柱套筒的相对端密封。 内套筒沿着外圆柱形套筒的一部分延伸，提供内部真空室。 加热元件设置在圆筒套筒和内套筒之间，该内套筒将内坩埚接收室和其中的坩埚加热在轴承半导体构成材料中，使得半导体构成材料在不受加热元件污染的情况下流出。
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