公开(公告)号：US20080156789A1

公开(公告)日：2008-07-03

申请号：US12029777

申请日：2008-02-12

Applicant: Andrew Devey ,  James D. Parsons

Inventor： Andrew Devey ,  James D. Parsons

IPC: H05B3/06 ,  H05B3/68

CPC classification number: B23K1/018 ,  B23K2101/40 ,  H01L24/75 ,  H01L2924/14 ,  H01L2924/00

Abstract: The present platen enables a component such as a surface-mount device to be held in close proximity to a contact heating source via vacuum suction. The platen comprises top and bottom thermally conductive surfaces with the top surface held in close proximity to the contact heating source, a through-hole which extends between the surfaces, and at least one groove recessed into the top surface which runs from a portion of the top surface that extends beyond the contact heating source to the through-hole, such that an applied vacuum is conveyed to the bottom surface via the grooves and through-hole. The bottom surface may include a rim around its perimeter; vacuum suction conveyed via the grooves and through-hole can hold a component to be heated against the rim, or within the recessed portion. The platen can be tailored for use with various component types, including PBGA and QFP SMDs.

Abstract translation: 本压板使得诸如表面安装装置的部件能够通过真空吸附保持紧靠接触加热源。 压板包括顶部和底部导热表面，顶表面保持紧邻接触加热源，在表面之间延伸的通孔和凹入到顶表面中的至少一个凹槽，该凹槽从一部分 顶表面延伸超过接触加热源到通孔，使得施加的真空经由凹槽和通孔传送到底表面。 底表面可以包括围绕其周边的边缘; 通过凹槽和通孔输送的真空吸力可以将待加热的部件保持在边缘上，或者在凹部内。 压板可以定制用于各种组件类型，包括PBGA和QFP SMD。

公开(公告)号：US07021136B2

公开(公告)日：2006-04-04

申请号：US10975644

申请日：2004-10-27

Applicant: Craig A. Vincze ,  James Gibson ,  James D. Parsons ,  Thomas E. Fehlman

Inventor： Craig A. Vincze ,  James Gibson ,  James D. Parsons ,  Thomas E. Fehlman

IPC: G01F1/68

CPC classification number: G01F1/692 ,  G01F1/6845 ,  G01F1/6847 ,  G01F5/00

Abstract: A mass flow meter employs discrete chip-type temperature sensors to sense a fluid flow rate. The sensor can be a semiconductor chip such as SiC or silicon, or thin film tungsten on an AlN substrate. The sensors can be distributed symmetrically with respect to the conduit through which the fluid flows, and can be connected in a four-sensor bridge circuit for accurate flow rate monitoring. An output from the mass flow meter can be used to control the fluid flow.

Abstract translation: 质量流量计采用分立的片式温度传感器来感测流体流速。 该传感器可以是诸如SiC或硅的半导体芯片，或AlN衬底上的薄膜钨。 传感器可以相对于流体流过的管道对称地分布，并且可以连接在四传感器桥接电路中以进行精确的流量监测。 可以使用质量流量计的输出来控制流体流量。

公开(公告)号：US06649994B2

公开(公告)日：2003-11-18

申请号：US10175940

申请日：2002-06-20

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: H01L31058

CPC classification number: G01K7/16 ,  H01C7/022 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.

Abstract translation: 高温混合电路结构包括温度敏感器件，其包括通过电极连接到物理地结合到AlN管芯的导电安装层的SiC，AlN和/或Al x Ga 1-x N（x> 0.69）。 模具，温度敏感装置和安装层（可以是W，WC或W2C）的温度系数彼此在1.06以内。 安装层可以完全由W，WC或W2C粘合剂层组成，或具有覆盖金属化层的粘合剂层，其热膨胀系数不大于粘合层的约3.5倍。 该装置可以用反应的硼硅酸盐混合物包封，具有或不具有上模具，其有助于保持引线并增加结构完整性。 应用包括温度传感器，压力传感器，化学传感器，以及高温和高功率电子电路。

公开(公告)号：US6150246A

公开(公告)日：2000-11-21

申请号：US251897

申请日：1999-02-19

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: H01L29/73 ,  H01L21/04 ,  H01L21/28 ,  H01L21/331 ,  H01L21/338 ,  H01L21/822 ,  H01L23/49 ,  H01L27/04 ,  H01L29/45 ,  H01L29/47 ,  H01L29/74 ,  H01L29/749 ,  H01L29/78 ,  H01L29/812 ,  H01L29/861 ,  H01L29/872 ,  H01L21/44

CPC classification number: H01L24/01 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/66068 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01043 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/01059 ,  H01L2924/0107 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/3025

Abstract: Metallic osmium on SiC (either .beta. or .alpha.) forms a contact that remains firmly attached to the SiC surface and forms an effective barrier against diffusion from the conductive metal. On n-type SiC, Os forms an abrupt Schottky rectifying junction having essentially unchanged operating characteristics to at least 1050.degree. C. and Schottky diodes that remain operable to 1175.degree. C. and a barrier height over 1.5 ev. On p-type SiC, Os forms an ohmic contact with specific contact resistance of

Abstract translation: SiC（β或α）上的金属锇形成一个保持牢固地附着在SiC表面上的接触，并形成有效的屏障，防止导电金属的扩散。 在n型SiC上，Os形成突变的肖特基整流结，具有基本上不变的操作特性至少为1050℃，肖特基二极管保持可操作至1175℃，势垒高度超过1.5ev。 在p型SiC上，Os形成具有<10-4 ohm-cm2的特定接触电阻的欧姆接触。 通过在TiC层上沉积WC层，随后是金属W层，形成与SiC衬底上的TiC层的欧姆和整流接触。 这样的触点在至少1150℃是稳定的。电极直接或通过诸如Pt或PtAu合金之类的保护结合层连接到触点。

公开(公告)号：US4215788A

公开(公告)日：1980-08-05

申请号：US932818

申请日：1978-08-10

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: B60P3/24 ,  B65D88/62 ,  B65D25/06

CPC classification number: B65D90/004 ,  B60P3/246 ,  B65D88/62 ,  B65D90/046

Abstract: A flexible diaphragm can be moved to line opposite surfaces of a vehicle so that incompatible fluids alternately can be transported in the vehicle without the need for cleaning it. The edge of the diaphragm may be held against the inside surface of the vehicle container by a series of aligned clamps that are independently movable. The terminal edge of the diaphragm is enclosed in a transient pressure absorbing chamber defined in part by the under surface of the clamps which enables the clamps to exert increased sealing pressure on the diaphragm during the transient pressure surges caused by movement of the liquid when the vehicle changes speed or direction suddenly.

Abstract translation: 柔性隔膜可以移动到车辆的相对表面，使得不相容的流体交替地可以在车辆中运输而不需要清洁它。 隔膜的边缘可以通过可独立移动的一系列对准的夹具来抵靠车辆容器的内表面。 隔膜的末端边缘封闭在暂时的压力吸收室中，部分由夹具的下表面限定，这使得夹具能够在车辆运动时引起的瞬态压力波动期间对隔膜施加增加的密封压力 突然改变速度或方向。

公开(公告)号：US07176461B2

公开(公告)日：2007-02-13

申请号：US10655904

申请日：2003-09-05

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: G01J5/20

CPC classification number: H01L31/0256 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/09

Abstract: SiC at least about 400 micrometers thick, and preferably within the range of about 400-2,000 micrometers thick, is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. The SiC body preferably has a non-dopant impurity level low enough that it does not interfere with a single crystal structure for the SiC, and an approximately uniform thickness with an approximately flat radiation receiving surface.

Abstract translation: 采用至少约400微米厚，优选在约400-2,000微米厚范围内的SiC通过声吸收机制检测波长小于约10微米的电磁辐射。 SiC体优选具有足够低的非掺杂剂杂质水平，使得其不干扰用于SiC的单晶结构，并且具有近似均匀的具有近似平坦的辐射接收表面的厚度。

公开(公告)号：US06713762B2

公开(公告)日：2004-03-30

申请号：US09906441

申请日：2001-07-16

Applicant: James D. Parsons

Inventor： James D. Parsons

IPC: G01J500

CPC classification number: H01L31/0256 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/09

Abstract: Single crystal SiC at least 200 micrometers thick is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. Applications include IR radiation sensing, contactless temperature sensing and an IR controlled varistor.

Abstract translation: 使用至少200微米厚的单晶SiC通过声吸收机制检测波长小于约10微米的电磁辐射。 应用包括红外辐射感测，非接触式温度感测和红外控制压敏电阻。

公开(公告)号：US5200805A

公开(公告)日：1993-04-06

申请号：US138411

申请日：1987-12-28

Applicant: James D. Parsons ,  Oscar Stafsudd

Inventor： James D. Parsons ,  Oscar Stafsudd

IPC: C30B29/36 ,  H01L21/20 ,  H01L21/36 ,  H01L29/24 ,  H01L31/02 ,  H01L31/0312 ,  H01L31/032 ,  H01L33/26 ,  H01L33/34 ,  H01S3/14

CPC classification number: H01L33/34 ,  H01L21/0237 ,  H01L21/02521 ,  H01L21/02529 ,  H01L29/1608 ,  H01L31/0312 ,  H01L31/032 ,  H01L33/26

Abstract: A new type of semiconductor material is disclosed which consists of a .beta.-SiC:metal carbide alloy having the general formula Si.sub.w (metal 1).sub.x (metal 2).sub.y (metal 3).sub.z C, where w+x+y+z=1 and 1>w>0. The metals are selected from the group consisting of Ti, Hf, Zr, V, Ta, Mo, W and Nb, with Ti, Hf, and Zr preferred. By selecting appropriate proportions of metal carbide and SiC, the alloy's bandgap may be tailored to any desired level between the bandgaps of the metal carbide and SiC. Semiconductor devices are preferably formed by epitaxially growing a layer of the new alloy upon a substrate having a .beta.-SiC or TiC type crystal structure. In addition to retaining the benefits of single-bandgap .beta.-SiC with certain advantages, the new alloys make it possible to implement various electrical devices that cannot be achieved with .beta.-SiC, and also have a potential for bandfolded superlattices for infrared detectors and lasers.

Abstract translation: 公开了一种新型的半导体材料，其由具有通式Siw（金属1）x（金属2）y（金属3）z C的β-SiC：金属碳化物合金组成，其中w + x + y + z = 1和1> w> 0。 金属选自Ti，Hf，Zr，V，Ta，Mo，W和Nb，优选Ti，Hf和Zr。 通过选择适当比例的金属碳化物和SiC，合金的带隙可以适应金属碳化物和SiC的带隙之间的任何期望水平。 半导体器件优选通过在具有β-Si或TiC型晶体结构的衬底上外延生长新合金层而形成。 除了保留具有某些优点的单带隙β-SiC的优点之外，新的合金使得可以实现用β-SiC不能实现的各种电气设备，并且还具有用于红外探测器和激光器的带折叠超晶格的潜力 。

公开(公告)号：US4923716A

公开(公告)日：1990-05-08

申请号：US248651

申请日：1988-09-26

Applicant: Duncan W. Brown ,  James D. Parsons

Inventor： Duncan W. Brown ,  James D. Parsons

IPC: C23C16/32

CPC classification number: C23C16/325

Abstract: Silicon carbide is deposted by chemical vapor deposition from a vapor source having a single molecular species that provides both the silicon and the carbon. The molecular species has the composition C.sub.n Si.sub.n H.sub.m, where m ranges from 2n+1 to 4n+1 inclusive and n ranges from 2 to 6 inclusive, and exhibits a primary pyrolysis mechanism producing reactive fragments containing both silicon and carbon atoms. Unbalanced decomposition paths are avoided. The silicon and carbon atoms are necessarily codeposited in equal numbers and at equal rates onto the substrate, producing stoichiometric deposited silicon carbide. Preferred molecular sources include H.sub.3 SiCH.sub.2 CH.sub.2 SiH.sub.3, a silacycloalkane of the form (--SiH.sub.2 CH.sub.2 --).sub.p, where p is 2, 3, 4, or 5, and a cyclic structure of the form (--SiH(CH.sub.3)--).sub.q, where q is 4 or 5.

Abstract translation: 碳化硅通过化学气相沉积从具有提供硅和碳的单一分子种类的蒸气源中沉淀出来。 分子种类具有CnSinHm的组成，其中m范围为2n + 1至4n + 1，n为2至6，包括端值在内，并且表现出产生含有硅和碳原子的反应性片段的初级热解机理。 避免了不平衡的分解路径。 硅和碳原子必须以相等的数量和相等的速率共沉积到衬底上，产生化学计量沉积的碳化硅。 优选的分子源包括H3SiCH2CH2SiH3，（-SiH2CH2-）p形式的硅环烷烃，其中p为2,3,4或5，以及形式（-SiH（CH3） - ）q的环状结构，其中q为 4或5。

公开(公告)号：US4205756A

公开(公告)日：1980-06-03

申请号：US932819

申请日：1978-08-10

Applicant: James D. Parsons ,  Richard D. Mehring

Inventor： James D. Parsons ,  Richard D. Mehring

IPC: B65D88/62 ,  B65D87/16 ,  B65D25/06

CPC classification number: B65D88/62

Abstract: A flexible diaphragm can be moved to line opposite surfaces of a vehicle container so that incompatible fluids alternately can be transported in the vehicle without the need for cleaning it. The edge of the diaphragm may be held against the inside surface of the vehicle container by a clamp. The terminal edge of the diaphragm contacts an abutment around its entire periphery. The clamp extends over the diaphragm terminal edge and the abutment.

Abstract translation: 柔性隔膜可以移动到车辆容器的相对表面线上，使得不相容的流体交替地可以在车辆中运输而不需要清洁它。 隔膜的边缘可以通过夹具固定在车辆容器的内表面上。 隔膜的末端边缘围绕其整个周边接触支座。 夹具延伸在隔膜端子边缘和基台上。