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31 条记录 (耗时 0.022 秒)

    Method for treating a semiconductor surface to form a metal-containing layer
    1.
    发明授权
    Method for treating a semiconductor surface to form a metal-containing layer 有权
    用于处理半导体表面以形成含金属层的方法

    公开(公告)号：US07132360B2

    公开(公告)日：2006-11-07

    申请号：US10865268

    申请日：2004-06-10

    申请人： James K. Schaeffer ,  Darrell Roan ,  Dina H. Triyoso ,  Olubunmi O. Adetutu

    发明人： James K. Schaeffer ,  Darrell Roan ,  Dina H. Triyoso ,  Olubunmi O. Adetutu

    IPC分类号： H01L21/4763 ,  H01L21/8344 ,  H01L21/8242 ,  H01L21/336

    CPC分类号： H01L21/02181 ,  C23C16/0272 ,  H01L21/3141 ,  H01L21/31645

    摘要： A method for treating a semiconductor surface to form a metal-containing layer includes providing a semiconductor substrate having an exposed surface. The exposed surface of the semiconductor substrate is treated by forming one or more metals overlying the semiconductor substrate but not completely covering the exposed surface of the semiconductor substrate. The one or more metals enhance nucleation for subsequent material growth. A metal-containing layer is formed on the exposed surface of the semiconductor substrate that has been treated. The treatment of the exposed surface of the semiconductor substrate assists the metal-containing layer to coalesce. In one embodiment, treatment of the exposed surface to enhance nucleation may be performed by spin-coating, atomic layer deposition (ALD), physical layer deposition (PVD), electroplating, or electroless plating. The one or more metals used to treat the exposed surface may include any rare earth or transition metal, such as, for example, hafnium, lanthanum, etc.

    摘要翻译： 一种用于处理半导体表面以形成含金属层的方法包括提供具有暴露表面的半导体衬底。 半导体衬底的暴露表面通过形成覆盖半导体衬底但不完全覆盖半导体衬底的暴露表面的一种或多种金属来处理。 一种或多种金属增强成核以用于随后的材料生长。 在已经处理的半导体衬底的暴露表面上形成含金属层。 半导体衬底的暴露表面的处理有助于含金属层的聚结。 在一个实施方案中，可以通过旋涂，原子层沉积（ALD），物理层沉积（PVD），电镀或无电镀来进行暴露表面的处理以增强成核。 用于处理暴露表面的一种或多种金属可以包括任何稀土或过渡金属，例如铪，镧等。

    Method for forming a layer using a purging gas in a semiconductor process
    2.
    发明授权
    Method for forming a layer using a purging gas in a semiconductor process 失效
    在半导体工艺中使用吹扫气体形成层的方法

    公开(公告)号：US07015153B1

    公开(公告)日：2006-03-21

    申请号：US10969634

    申请日：2004-10-20

    申请人： Dina H. Triyoso ,  Olubunmi O. Adetutu ,  David C. Gilmer ,  Darrell Roan ,  James K. Schaeffer ,  Philip J. Tobin ,  Hsing H. Tseng

    发明人： Dina H. Triyoso ,  Olubunmi O. Adetutu ,  David C. Gilmer ,  Darrell Roan ,  James K. Schaeffer ,  Philip J. Tobin ,  Hsing H. Tseng

    IPC分类号： H01L21/31

    CPC分类号： C23C14/0057 ,  C23C16/30 ,  C23C16/45527 ,  H01L21/28229 ,  H01L21/3141 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    摘要： A method for forming at least a portion of a semiconductor device includes providing a semiconductor substrate, flowing a first precursor gas over the substrate to form a first metal-containing layer overlying the semiconductor substrate, and after completing said step of flowing the first precursor gas, flowing a first deuterium-containing purging gas over the first metal-containing layer to incorporate deuterium into the first metal-containing layer and to also purge the first precursor gas. The method may further include flowing a second precursor gas over the first metal-containing layer to react with the first metal-containing layer to form a metal compound-containing layer, and flowing a second deuterium-containing purging gas over the metal compound-containing layer to incorporate deuterium into the metal compound-containing layer and to also purge the second precursor gas.

    摘要翻译： 一种用于形成半导体器件的至少一部分的方法包括提供半导体衬底，使第一前体气体流过衬底以形成覆盖半导体衬底的第一含金属层，并且在完成所述第一前体气体流动步骤 使第一含氘吹扫气体流过第一含金属层，将氘掺入第一含金属层并且还吹扫第一前体气体。 该方法还可以包括使第二前体气体流过第一含金属层以与第一含金属层反应以形成含金属化合物的层，并将第二含氘的净化气体流过含金属化合物的层 层将氘并入含金属化合物的层中并且还吹扫第二前体气体。

    ALD gate electrode
    3.
    发明授权
    ALD gate electrode 有权
    ALD栅电极

    公开(公告)号：US07303983B2

    公开(公告)日：2007-12-04

    申请号：US11331763

    申请日：2006-01-13

    申请人： Dina H. Triyoso ,  Olubunmi O. Adetutu ,  James K. Schaeffer

    发明人： Dina H. Triyoso ,  Olubunmi O. Adetutu ,  James K. Schaeffer

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

    摘要： A semiconductor process and apparatus fabricate a metal gate electrode by forming a first conductive layer (22) over a gate dielectric layer (11), forming a transition layer (32) over the first conductive layer using an atomic layer deposition process in which an amorphizing material is increasingly added as the transition layer is formed, forming a capping conductive layer (44) over the transition layer, and then selectively etching the capping conductive layer, transition layer, and first conductive layer, resulting in the formation of an etched gate stack (52). By forming the transition layer (32) with an atomic layer deposition process in which the amorphizing material (such as silicon, carbon, or nitrogen) is increasingly added, the transition layer (32) is constructed having a lower region (e.g., 31, 33) with a polycrystalline structure and an upper region (e.g., 37, 39) with an amorphous structure that blocks silicon diffusion.

    摘要翻译： 一种半导体工艺和装置，通过在栅介质层（11）上形成第一导电层（22）制造金属栅电极，在第一导电层上形成过渡层（32），使用原子层沉积工艺，其中非晶化 随着形成过渡层，材料越来越多地加入，在过渡层上形成覆盖导电层（44），然后选择性地蚀刻覆盖导电层，过渡层和第一导电层，从而形成蚀刻栅叠层 （52）。 通过用原子层沉积工艺形成过渡层（32），其中非晶化材料（例如硅，碳或氮）越来越多地被加入，过渡层（32）被构造成具有较低的区域（例如，31， 33）和具有阻挡硅扩散的非晶结构的上部区域（例如，37,39）。

    Method to reduce impurity elements during semiconductor film deposition
    4.
    发明授权
    Method to reduce impurity elements during semiconductor film deposition 有权
    在半导体膜沉积期间减少杂质元素的方法

    公开(公告)号：US06987063B2

    公开(公告)日：2006-01-17

    申请号：US10865452

    申请日：2004-06-10

    申请人： Olubunmi O. Adetutu ,  James K. Schaeffer ,  Dina H. Triyoso

    发明人： Olubunmi O. Adetutu ,  James K. Schaeffer ,  Dina H. Triyoso

    IPC分类号： H01L21/44

    CPC分类号： C23C14/0005 ,  C23C16/4401 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31645

    摘要： A metal-containing semiconductor layer having a high dielectric constant is formed with a method that avoids inclusion of contaminant elements that reduce dielectric constant of metals. The metal-containing semiconductor layer is formed overlying a substrate in a chamber. A precursor is introduced to deposit at least a portion of the metal-containing semiconductor layer. The precursor contains one or more elements that, if allowed to deposit in the metal-containing layer, would become impurity elements. A reactant gas is used to purify the metal-containing layer by removing impurity elements from the metal-containing layer which were introduced into the chamber by the precursor.

    摘要翻译： 通过避免包含降低金属介电常数的污染元素的方法，形成具有高介电常数的含金属的半导体层。 含金属的半导体层形成在室内的基板上。 引入前体以沉积至少一部分含金属的半导体层。 前体含有一种或多种元素，如果允许沉积在含金属的层中，则会成为杂质元素。 反应气体用于通过从由前体引入室中的含金属层去除杂质元素来净化含金属层。

    SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTIVE ELEMENT AND METHOD OF MAKING
    6.
    发明申请
    SEMICONDUCTOR DEVICE WITH INTEGRATED RESISTIVE ELEMENT AND METHOD OF MAKING 失效
    具有集成电阻元件的半导体器件及其制造方法

    公开(公告)号：US20080206939A1

    公开(公告)日：2008-08-28

    申请号：US11680199

    申请日：2007-02-28

    申请人： Byoung W. Min ,  James K. Schaeffer ,  David C. Sing

    发明人： Byoung W. Min ,  James K. Schaeffer ,  David C. Sing

    IPC分类号： H01L21/8234

    CPC分类号： H01L27/0629 ,  H01L28/20

    摘要： A resistive device (44) and a transistor (42) are formed. Each uses a portion of a metal layer (18) that is formed at the same time and thus additional process steps are avoided to remove the metal from the resistive device. The metal used in the resistive device is selectively treated to increase the resistance in the resistive device. A polycrystalline semiconductor material layer (34) overlies the metal layer in the resistive device. The combination of these layers provides the resistive device. In one form the metal is treated after formation of the polycrystalline semiconductor material layer. In one form the metal treatment involves an implant of a species, such as oxygen, to increase the resistivity of the metal. Various transistor structures are formed using the untreated portion of the metal layer as a control electrode.

    摘要翻译： 形成电阻器件（44）和晶体管（42）。 每个都使用同时形成的金属层（18）的一部分，因此避免了额外的工艺步骤以从电阻器件去除金属。 选择性地处理在电阻器件中使用的金属以增加电阻器件中的电阻。 多晶半导体材料层（34）覆盖电阻器件中的金属层。 这些层的组合提供了电阻装置。 在一种形式中，在形成多晶半导体材料层之后处理金属。 在一种形式中，金属处理包括物质（例如氧）的植入物以增加金属的电阻率。 使用金属层的未处理部分作为控制电极形成各种晶体管结构。