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公开(公告)号：US11251330B2
公开(公告)日：2022-02-15
申请号：US15449044
申请日：2017-03-03
IPC分类号： H01L33/00 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/46 , H01L33/60
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
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2.发明申请公开(公告)号：US20160225949A1
公开(公告)日：2016-08-04
申请号：US15046515
申请日：2016-02-18
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
摘要翻译： 在各种实施例中，发光器件包括平滑的接触层和偏振掺杂（即，基本上不含掺杂剂杂质的下层）并且表现出高的光子提取效率。
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3.发明授权公开(公告)号：US09299880B2
公开(公告)日：2016-03-29
申请号：US14208379
申请日：2014-03-13
IPC分类号： H01L33/42 , H01L33/32 , H01L33/40 , H01L33/46 , H01L33/06 , H01L33/04 , H01L33/00 , H01L33/38
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
摘要翻译： 在各种实施例中，发光器件包括平滑的接触层和偏振掺杂（即，基本上不含掺杂剂杂质的下层）并且表现出高的光子提取效率。
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公开(公告)号：US09620676B2
公开(公告)日：2017-04-11
申请号：US15046515
申请日：2016-02-18
IPC分类号： H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/40 , H01L33/46 , H01L33/14 , H01L33/22 , H01L33/04 , H01L33/38 , H01L33/42
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
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5.发明申请METHODS OF FORMING PLANAR CONTACTS TO PSEUDOMORPHIC ELECTRONIC AND OPTOELECTRONIC DEVICES 审中-公开形成与电子电子和光电器件平面接触的方法公开(公告)号：US20150280057A1
公开(公告)日：2015-10-01
申请号：US14208089
申请日：2014-03-13
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, smooth contact layers are formed on polarization-doped light-emitting devices to enable high photon extraction efficiencies.
摘要翻译： 在各种实施例中，在偏振掺杂的发光器件上形成平滑的接触层以实现高的光子提取效率。
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公开(公告)号：US20170179336A1
公开(公告)日：2017-06-22
申请号：US15449044
申请日：2017-03-03
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
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7.发明申请公开(公告)号：US20140264263A1
公开(公告)日：2014-09-18
申请号：US14208379
申请日：2014-03-13
CPC分类号： H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/325 , H01L33/387 , H01L33/40 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/60 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.
摘要翻译： 在各种实施例中，发光器件包括平滑的接触层和偏振掺杂（即，基本上不含掺杂剂杂质的下层）并且表现出高的光子提取效率。
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公开(公告)号：US09680057B2
公开(公告)日：2017-06-13
申请号：US15267458
申请日：2016-09-16
申请人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
发明人： Craig Moe , James R. Grandusky , Shawn R. Gibb , Leo J. Schowalter , Kosuke Sato , Tomohiro Morishita
IPC分类号： H01L33/14 , H01L33/06 , H01L33/32 , H01L33/46 , H01L33/44 , H01L33/00 , H01L33/02 , H01L33/36
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/025 , H01L33/145 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/46
摘要： In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.
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公开(公告)号：US08080833B2
公开(公告)日：2011-12-20
申请号：US12764584
申请日：2010-04-21
IPC分类号： H01L33/00
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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公开(公告)号：US20120104355A1
公开(公告)日：2012-05-03
申请号：US13298570
申请日：2011-11-17
IPC分类号： H01L33/06
CPC分类号： H01L21/0254 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/0262 , H01L33/025 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32
摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
摘要翻译： 在各种实施例中，半导体器件包括氮化铝单晶衬底，设置在其上的假晶应变层，其包括AlN，GaN，InN或其合金中的至少一种，并且在应变层上设置半导体层 这与衬底晶格失配并基本上松弛。
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