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公开(公告)号：US09236363B2
公开(公告)日：2016-01-12
申请号：US14204340
申请日：2014-03-11
CPC分类号： H01L24/48 , H01L21/822 , H01L22/14 , H01L23/642 , H01L23/647 , H01L24/43 , H01L24/45 , H01L27/0676 , H01L27/0794 , H01L28/20 , H01L2224/05578 , H01L2224/05599 , H01L2224/13028 , H01L2224/1613 , H01L2224/438 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4801 , H01L2224/48011 , H01L2224/4813 , H01L2224/4847 , H01L2224/85399 , H01L2224/85423 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/1203 , H01L2924/1205 , H01L2924/1207 , H01L2924/20658 , H01L2924/30107 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756
摘要： A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.
摘要翻译： 半导体器件包括衬底，由衬底支撑并且通过间隙彼此间隔开的第一和第二接合焊盘结构，以及跨越间隙延伸并结合到第一和第二接合焊盘结构的引线接合脚跨接件。
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公开(公告)号：US20150262961A1
公开(公告)日：2015-09-17
申请号：US14204340
申请日：2014-03-11
IPC分类号： H01L23/00 , H01L29/861 , H01L23/64 , H01L27/07 , H01L21/822 , H01L49/02 , H01L27/06
CPC分类号： H01L24/48 , H01L21/822 , H01L22/14 , H01L23/642 , H01L23/647 , H01L24/43 , H01L24/45 , H01L27/0676 , H01L27/0794 , H01L28/20 , H01L2224/05578 , H01L2224/05599 , H01L2224/13028 , H01L2224/1613 , H01L2224/438 , H01L2224/45014 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4801 , H01L2224/48011 , H01L2224/4813 , H01L2224/4847 , H01L2224/85399 , H01L2224/85423 , H01L2224/85444 , H01L2224/85447 , H01L2924/00014 , H01L2924/1203 , H01L2924/1205 , H01L2924/1207 , H01L2924/20658 , H01L2924/30107 , H01L2924/20754 , H01L2924/20755 , H01L2924/20756
摘要： A semiconductor device includes a substrate, first and second bond pad structures supported by the substrate and spaced from one another by a gap, and a wire bond foot jumper extending across the gap and bonded to the first and second bond pad structures.
摘要翻译： 半导体器件包括衬底，由衬底支撑并且通过间隙彼此间隔开的第一和第二接合焊盘结构，以及跨越间隙延伸并结合到第一和第二接合焊盘结构的引线接合脚跨接件。
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公开(公告)号：US08890339B1
公开(公告)日：2014-11-18
申请号：US13873752
申请日：2013-04-30
IPC分类号： H01L21/44 , H01L21/768 , H01L23/49
CPC分类号： H01L24/05 , H01L23/5223 , H01L23/642 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05556 , H01L2224/45015 , H01L2224/451 , H01L2224/48458 , H01L2224/4847 , H01L2224/49175 , H01L2224/85423 , H01L2224/85447 , H01L2224/85484 , H01L2924/00014 , H01L2924/13091 , H01L2924/00 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2224/45099
摘要： A bond pad region is provided that reduces parasitic capacitance generated between bond pad metallization and underlying silicon by reducing the effective area of the bond pad, while maintaining flexibility of wire bond sites and ensuring mechanical integrity of the wire bonds. Embodiments provide, in a region that would be populated by a traditional bus bar bond pad, a small bus bar bond pad that is less than half the area of the region and populating at least a portion of the remaining area with metal tiles that are not electrically connected to the small bus bar bond pad or to each other. The metal tiles provide an attachment area for at least a portion of one or more wire bonds. Only those tiles involved in connection to a wire bond contribute to parasitic capacitance, along with the small bus bar pad.
摘要翻译： 提供接合焊盘区域，其通过减小接合焊盘的有效面积来减少接合焊盘金属化和下层硅之间产生的寄生电容，同时保持引线键合位置的灵活性并确保引线键合的机械完整性。 实施例在将由传统母线接合焊盘填充的区域中提供小于该区域的一半面积的小母线接合焊盘，并且使用不是的金属瓦片填充剩余区域的至少一部分 电连接到小母线接合焊盘或彼此。 金属砖为一个或多个引线接合的至少一部分提供附接区域。 只有连接到引线键的那些瓷砖与小母线垫一起有助于寄生电容。
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公开(公告)号：US20140319703A1
公开(公告)日：2014-10-30
申请号：US13873752
申请日：2013-04-30
IPC分类号： H01L23/49 , H01L21/768
CPC分类号： H01L24/05 , H01L23/5223 , H01L23/642 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/04042 , H01L2224/05556 , H01L2224/45015 , H01L2224/451 , H01L2224/48458 , H01L2224/4847 , H01L2224/49175 , H01L2224/85423 , H01L2224/85447 , H01L2224/85484 , H01L2924/00014 , H01L2924/13091 , H01L2924/00 , H01L2924/20755 , H01L2924/20756 , H01L2924/20757 , H01L2924/20758 , H01L2924/20759 , H01L2924/2076 , H01L2224/45099
摘要： A bond pad region is provided that reduces parasitic capacitance generated between bond pad metallization and underlying silicon by reducing the effective area of the bond pad, while maintaining flexibility of wire bond sites and ensuring mechanical integrity of the wire bonds. Embodiments provide, in a region that would be populated by a traditional bus bar bond pad, a small bus bar bond pad that is less than half the area of the region and populating at least a portion of the remaining area with metal tiles that are not electrically connected to the small bus bar bond pad or to each other. The metal tiles provide an attachment area for at least a portion of one or more wire bonds. Only those tiles involved in connection to a wire bond contribute to parasitic capacitance, along with the small bus bar pad.
摘要翻译： 提供接合焊盘区域，其通过减小接合焊盘的有效面积来减少接合焊盘金属化和下层硅之间产生的寄生电容，同时保持引线键合位置的灵活性并确保引线键合的机械完整性。 实施例在将由传统母线接合焊盘填充的区域中提供小于该区域的一半面积的小母线接合焊盘，并且使用不是的金属瓦片填充剩余区域的至少一部分 电连接到小母线接合焊盘或彼此。 金属砖为一个或多个引线接合的至少一部分提供附接区域。 只有连接到引线键的那些瓷砖与小母线垫一起有助于寄生电容。
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