公开(公告)号：US06555946B1

公开(公告)日：2003-04-29

申请号：US09624803

申请日：2000-07-24

申请人： Jeffrey M. Finder ,  Kurt Eisenbeiser ,  Jamal Ramdani ,  Ravindranath Droopad ,  William Jay Ooms

发明人： Jeffrey M. Finder ,  Kurt Eisenbeiser ,  Jamal Ramdani ,  Ravindranath Droopad ,  William Jay Ooms

IPC分类号： H01L4108

CPC分类号： H03H9/174 ,  H01L27/20 ,  H01L41/319 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/0542

摘要： High quality epitaxial layers of piezoelectric material materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

摘要翻译： 通过首先在硅晶片上生长一个容纳缓冲层，可以将高质量的压电材料外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

公开(公告)号：US06493497B1

公开(公告)日：2002-12-10

申请号：US09669602

申请日：2000-09-26

申请人： Jamal Ramdani ,  Lyndee Hilt ,  Ravindranath Droopad ,  William Jay Ooms

发明人： Jamal Ramdani ,  Lyndee Hilt ,  Ravindranath Droopad ,  William Jay Ooms

IPC分类号： G02B610

CPC分类号： G02B6/12004 ,  G02B6/131 ,  G02F1/0338 ,  G02F1/035

摘要： High quality epitaxial layers of oxide can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous intermediate layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous intermediate layer. Waveguides may be formed of high quality monocrystalline material atop the monocrystalline buffer layer. The waveguides can suitably be formed to modulate the wave. Monolithic integration of oxide based electro-optic devices with III-V based photonics and Si circuitry is fully realized.

摘要翻译： 通过首先在硅晶片上生长容纳缓冲层，可以生长覆盖大硅晶片的高质量的氧化物外延层。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 无定形中间层耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过无定形中间层处理容纳缓冲层和下面的硅衬底之间的任何晶格失配。 波导可以由单晶缓冲层顶部的高质量单晶材料形成。 可以适当地形成波导以调制波。 基于氧化物的电光器件与基于III-V的光子学和Si电路的单片集成完全实现。

公开(公告)号：US20050056210A1

公开(公告)日：2005-03-17

申请号：US10911624

申请日：2004-08-05

申请人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

发明人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

IPC分类号： H01L21/20 ,  H01L21/8258 ,  H01L27/06 ,  H01L29/88 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/02 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L29/882 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

摘要翻译： 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

公开(公告)号：US06590236B1

公开(公告)日：2003-07-08

申请号：US09624296

申请日：2000-07-24

申请人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

发明人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

IPC分类号： H01L310328

CPC分类号： H01L21/31691 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  Y10S438/90 ,  Y10S438/933

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles.

摘要翻译： 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 这些半导体材料具有涉及与高频信号通信的应用，包括诸如汽车雷达系统，智能巡航控制系统，防撞系统和汽车导航系统之类的智能交通系统; 以及使用微波或RF信号的电子支付系统，例如用于包括火车票价的各种交通系统的电子费用付费，以及用于汽车的收费公路，停车场和收费桥。

公开(公告)号：US07105866B2

公开(公告)日：2006-09-12

申请号：US10911624

申请日：2004-08-05

申请人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

发明人： Nada El-Zein ,  Jamal Ramdani ,  Kurt Eisenbeiser ,  Ravindranath Droopad

IPC分类号： H01L29/861

CPC分类号： H01L29/882 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605

摘要： High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

摘要翻译： 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。

公开(公告)号：US06709989B2

公开(公告)日：2004-03-23

申请号：US09885409

申请日：2001-06-21

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

IPC分类号： H01L2100

CPC分类号： H01L21/3141 ,  H01L21/02172 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/316 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31645 ,  H01L21/31691

摘要： A method of fabricating a semiconductor structure including the steps of: providing a silicon substrate having a surface; forming by atomic layer deposition a monocrystalline seed layer on the surface of the silicon substrate; and forming by atomic layer deposition one or more layers of a monocrystalline high dielectric constant oxide on the seed layer, where providing a substrate includes providing a substrate having formed thereon a silicon oxide, and wherein forming by atomic layer deposition a seed layer further includes depositing a layer of a metal oxide onto a surface of the silicon oxide, flushing the layer of metal oxide with an inert gas, and reacting the metal oxide and the silicon oxide to form a monocrystalline silicate.

摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面的硅衬底;通过原子层沉积在硅衬底的表面上形成单晶种子层; 并且通过原子层沉积形成在种子层上的单晶高介电常数氧化物的一层或多层，其中提供衬底包括提供其上形成有氧化硅的衬底，并且其中通过原子层沉积形成晶种层还包括沉积 在氧化硅表面上的金属氧化物层，用惰性气体冲洗金属氧化物层，并使金属氧化物和氧化硅反应形成单晶硅酸盐。

公开(公告)号：US06291319B1

公开(公告)日：2001-09-18

申请号：US09465622

申请日：1999-12-17

申请人： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

发明人： Zhiyi Yu ,  Jun Wang ,  Ravindranath Droopad ,  Jamal Ramdani

IPC分类号： H01L2120

CPC分类号： H01L21/318 ,  C30B23/02 ,  C30B29/16 ,  C30B29/32 ,  H01L21/3144 ,  H01L21/31691 ,  H01L28/56

摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, nitrogen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, nitrogen, and a metal in the form MSiN2, where M is a metal. In a second embodiment, the interface comprises an atomic layer of silicon, a metal, and a mixture of nitrogen and oxygen in the form MSi[N1−Ox]2, where M is a metal and X is 0≦X

摘要翻译： 一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氮和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。 该界面包括硅，氮和MSiN 2形式的金属的原子层，其中M是金属。 在第二个实施方案中，界面包括形式为MSi [N1-Ox] 2的硅，金属以及氮和氧的混合物的原子层，其中M是金属，X是0 <= X <1。

公开(公告)号：US06270568B1

公开(公告)日：2001-08-07

申请号：US09354173

申请日：1999-07-15

申请人： Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

发明人： Ravindranath Droopad ,  Zhiyi Yu ,  Jamal Ramdani

IPC分类号： C30B100

CPC分类号： H01L28/56 ,  H01L21/31662 ,  H01L21/31683 ,  H01L21/31691

摘要： A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming an interface including a seed layer (18) adjacent to the surface (12) of the silicon substrate (10), forming a buffer layer (20) utilizing molecular oxygen; and forming one or more layers of a high dielectric constant oxide (22) on the buffer layer (20) utilizing activated oxygen.

摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 形成包括与所述硅衬底（10）的所述表面（12）相邻的晶种层（18）的界面，使用分子氧形成缓冲层（20）; 以及使用活性氧在缓冲层（20）上形成一层或多层高介电常数氧化物（22）。

公开(公告)号：US06241821B1

公开(公告)日：2001-06-05

申请号：US09273929

申请日：1999-03-22

申请人： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

发明人： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

IPC分类号： C30B2514

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/30

摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.

公开(公告)号：US06319730B1

公开(公告)日：2001-11-20

申请号：US09354522

申请日：1999-07-15

申请人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

发明人： Jamal Ramdani ,  Ravindranath Droopad ,  Zhiyi Yu

IPC分类号： H01L2100

CPC分类号： H01L21/31691

摘要： A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the surface (12) of the silicon substrate (10); providing a metal oxide (18) on the amorphous silicon dioxide (14); heating the semiconductor structure to form an interface comprising a seed layer (20) adjacent the surface (12) of the silicon substrate (10); and forming one or more layers of a high dielectric constant oxide (22) on the seed layer (20).

摘要翻译： 一种制造半导体结构的方法，包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底（10）的表面（12）上形成无定形二氧化硅（14）; 在所述无定形二氧化硅（14）上提供金属氧化物（18）; 加热半导体结构以形成包括邻近硅衬底（10）的表面（12）的晶种层（20）的界面; 以及在种子层（20）上形成一层或多层高介电常数氧化物（22）。