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    Multi-step magnetron sputtering process
    1.
    发明授权
    Multi-step magnetron sputtering process 有权
    多级磁控溅射工艺

    公开(公告)号：US06991709B2

    公开(公告)日：2006-01-31

    申请号：US10934231

    申请日：2004-09-03

    申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

    发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Wei Wang ,  Ashok K. Sinha

    IPC分类号： C23C14/34

    CPC分类号： H01L21/76844 ,  C23C14/046 ,  C23C14/165 ,  C23C14/185 ,  C23C14/225 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： A multi-step sputtering process in plasma sputter reactor having target and magnetron operable in two modes, for example, in a substrate sputter etch and a substrate sputter deposition. The target has an annular vault facing the wafer to be sputter coated. Various types of magnetic means positioned around the vault create a magnetic field supporting a plasma extending over a large volume of the vault. An integrated copper via filling process with the inventive reactor or other reactor includes a first step of highly ionized sputter deposition of copper, which can optionally be used to remove the barrier layer at the bottom of the via, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and a third step of electroplating copper into the hole to complete the metallization. The first two steps can be also used with barrier metals.

    摘要翻译： 在等离子体溅射反应器中的多步骤溅射工艺，其具有可在两种模式中操作的靶和磁控管，例如在衬底溅射蚀刻和衬底溅射沉积中。 目标具有面向待溅射涂覆的晶片的环形保险库。 位于拱顶周围的各种类型的磁性装置产生一个支撑等离子体的磁场，该等离子体延伸在大容积的拱顶上。 与本发明的反应器或其它反应器的集成铜通孔填充方法包括铜的高度电离溅射沉积的第一步骤，其可任选地用于去除通孔底部的阻挡层，更中立的，更低的 铜的完全溅射沉积以完成种子层，以及将铜电镀到孔中以完成金属化的第三步骤。 前两个步骤也可以与阻隔金属一起使用。

    Titanium nitride barrier layers
    3.
    发明授权
    Titanium nitride barrier layers 失效
    氮化钛阻挡层

    公开(公告)号：US06238803B1

    公开(公告)日：2001-05-29

    申请号：US09501566

    申请日：2000-02-09

    申请人： Jianming Fu ,  Zheng Xu ,  Fusen Chen

    发明人： Jianming Fu ,  Zheng Xu ,  Fusen Chen

    IPC分类号： C23C1406

    CPC分类号： H01L21/76856 ,  C23C14/0641 ,  H01L21/2855 ,  H01L21/76843

    摘要： Improved titanium nitride barrier layers are formed by depositing a first titanium layer; treating this layer with an oxygen plasma to form an oxygen-containing titanium layer thereover; depositing a titanium nitride layer over the oxygen-containing titanium layer; and treating the titanium nitride layer with an oxygen-containing plasma. Robust titanium nitride barrier layers are formed that can prevent spiking by an overlying aluminum contact layer even after heat treatment up to 550° C.

    摘要翻译： 通过沉积第一钛层形成改进的氮化钛阻挡层; 用氧等离子体处理该层以在其上形成含氧钛层; 在含氧钛层上沉积氮化钛层; 并用含氧等离子体处理氮化钛层。 形成了坚固的氮化钛阻挡层，即使在高达550℃的热处理之后也可以防止由上覆的铝接触层引起的尖峰。

    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
    5.
    发明授权
    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement 有权
    金属化种子层的溅射沉积和蚀刻用于悬垂和侧壁改进

    公开(公告)号：US07294574B2

    公开(公告)日：2007-11-13

    申请号：US10915139

    申请日：2004-08-09

    申请人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

    发明人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael A. Miller ,  Jianming Fu ,  Jick M. Yu ,  Zheng Xu ,  Fusen Chen

    IPC分类号： H01L21/44

    CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

    摘要翻译： 一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。 在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。

    Integrated process for copper via filling using a magnetron and target producing highly energetic ions
    8.
    发明授权
    Integrated process for copper via filling using a magnetron and target producing highly energetic ions 失效
    通过使用磁控管进行填充的铜的集成工艺和产生高能离子的靶

    公开(公告)号：US06277249B1

    公开(公告)日：2001-08-21

    申请号：US09518180

    申请日：2000-03-02

    申请人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

    发明人： Praburam Gopalraja ,  Jianming Fu ,  Fusen Chen ,  Girish Dixit ,  Zheng Xu ,  Sankaram Athreya ,  Wei D. Wang ,  Ashok K. Sinha

    IPC分类号： C23C1435

    CPC分类号： H01L21/76844 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.

    摘要翻译： 用于等离子体溅射反应器的靶和磁控管。 目标具有面向待溅射涂覆的晶片的环形槽。 位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。 例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场， 密度等离子体从槽的顶部延伸到底部。 大的等离子体体积增加了溅射的金属原子将被电离的可能性。 磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。 顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。 槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。 集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement
    9.
    发明申请
    Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement 有权
    金属化种子层的溅射沉积和蚀刻用于悬垂和侧壁改进

    公开(公告)号：US20060030151A1

    公开(公告)日：2006-02-09

    申请号：US10915139

    申请日：2004-08-09

    申请人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael Miller ,  Jianming Fu ,  Jick Yu ,  Zheng Xu ,  Fusen Chen

    发明人： Peijun Ding ,  Fuhong Zhang ,  Hsien-Lung Yang ,  Michael Miller ,  Jianming Fu ,  Jick Yu ,  Zheng Xu ,  Fusen Chen

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/2855 ,  H01L21/76843 ,  H01L21/76865 ,  H01L21/76873 ,  H01L2221/1089

    摘要： An integrated sputtering method and reactor for copper or aluminum seed layers in which a plasma sputter reactor initially deposits a thin conformal layer onto a substrate including a high-aspect ratio hole subject to the formation of overhangs. After the seed deposition, the same sputter reactor is used to sputter etch the substrate with energetic light ions, especially helium, having an energy sufficiently low that it selectively etches the metallization to the heavier underlying barrier layer, for example, copper over tantalum or aluminum over titanium. An RF inductive coil generates the plasma during the sputtering etching while the target power is turned off. A final copper flash step deposits copper over the bare barrier field region before copper is electrochemically plated to fill the hole. The invention also includes a simultaneous sputter deposition and sputter etch, and an energetic ion processing of the copper seed sidewall.

    摘要翻译： 一种用于铜或铝种子层的集成溅射方法和反应器，其中等离子体溅射反应器最初将薄的共形层沉积到包括形成突出端的高纵横比孔的基板上。 在种子沉积之后，使用相同的溅射反应器以能量足够低的能量的能量轻离子（特别是氦）溅射蚀刻衬底，以使其能够将金属化选择性地蚀刻到较重的下层阻挡层，例如钽或铝上的铜 超过钛。 RF感应线圈在溅射蚀刻期间产生等离子体，同时关闭目标电源。 在铜电化学镀以填充孔之前，最终的铜闪光步骤将铜沉积在裸露的屏障场区域上。 本发明还包括同时溅射沉积和溅射蚀刻以及铜种子侧壁的能量离子处理。