公开(公告)号：US20120315741A1

公开(公告)日：2012-12-13

申请号：US13485671

申请日：2012-05-31

申请人： Jie Su ,  Jiang Lu ,  Hua Chung ,  Wei-Yung Hsu ,  David Bour

发明人： Jie Su ,  Jiang Lu ,  Hua Chung ,  Wei-Yung Hsu ,  David Bour

IPC分类号： H01L21/20

CPC分类号： H01L21/02579 ,  H01L21/0237 ,  H01L21/0254 ,  H01L21/0262

摘要： Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group III-nitride film includes flowing a group III precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p-type doped group III-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300-760 Torr.

摘要翻译： 描述了通过高压或ALD型处理将镁掺入到氮化镓膜中。 在一个实例中，制造III族氮化物膜的方法包括使III族前体，氮前体和p型掺杂剂前体流入具有衬底的反应室中。 在反应室中形成p型掺杂III族氮化物层，同时反应室中的总压力大约在300-760乇的范围内。

公开(公告)号：US20120235115A1

公开(公告)日：2012-09-20

申请号：US13355255

申请日：2012-01-20

申请人： Sang Won Kang ,  Jie Su ,  Tuoh-Bin NG ,  David Bour ,  Wei-Yung Hsu

发明人： Sang Won Kang ,  Jie Su ,  Tuoh-Bin NG ,  David Bour ,  Wei-Yung Hsu

IPC分类号： H01L21/205 ,  C23C16/34 ,  C23C16/52 ,  H01L33/06

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/02 ,  H01L33/20

摘要： Methods, semiconductor material stacks and equipment for manufacture of light emitting diodes (LEDs) with improve crystal quality. A growth stopper is deposited between nuclei for a group III-V material, such as GaN, to form a nano mask. The group III-V material is laterally overgrown from a region of the nuclei not covered by the nano mask to form a continuous material layer with reduced dislocation density in preparation for subsequent growth of n-type and p-type layers of the LED. The lateral overgrowth from the nuclei may further recover the surface morphology of the buffer layer despite the presence of the nano mask. Presence of the growth stopper may further result in void formation on a substrate side of an LED stack to improve light extraction efficiency.

摘要翻译： 方法，用于制造具有改善晶体质量的发光二极管（LED）的半导体材料堆叠和设备。 在诸如GaN的III-V族材料的核之间沉积生长塞，以形成纳米掩模。 III-V族材料从未被纳米掩模覆盖的核的区域横向长满，以形成具有降低的位错密度的连续材料层，以准备LED的n型和p型层的随后生长。 即使存在纳米掩模，来自核的侧向过度生长也可进一步恢复缓冲层的表面形态。 生长停止剂的存在可能进一步导致在LED堆叠的衬底侧上的空隙形成以提高光提取效率。

公开(公告)号：US08910644B2

公开(公告)日：2014-12-16

申请号：US13041230

申请日：2011-03-04

申请人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J. K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

发明人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J. K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： B08B3/02 ,  B08B5/00 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/67

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/45506 ,  C23C16/45591 ,  H01L21/02041 ,  H01L21/67115 ,  Y10S438/905

摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

摘要翻译： 本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。 清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。 湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。 在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。 此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。 该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。 然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

公开(公告)号：USD664170S1

公开(公告)日：2012-07-24

申请号：US29386850

申请日：2011-03-04

申请人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J. K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

设计人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J. K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

公开(公告)号：US20120052216A1

公开(公告)日：2012-03-01

申请号：US13154060

申请日：2011-06-06

申请人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

发明人： Hiroji Hanawa ,  Kyawwin Jason Maung ,  Hua Chung ,  Jie Cui ,  David Bour ,  Wei-Yung Hsu ,  Liang-Yuh Chen

IPC分类号： C23C16/48

CPC分类号： C23C16/45565 ,  C23C16/45574 ,  C23C16/481 ,  C23C16/52

摘要： Embodiments of the present invention provide methods and apparatus for surface coatings applied to process chamber components utilized in chemical vapor deposition processes. In one embodiment, the apparatus provides a showerhead apparatus comprising a body, a plurality of conduits extending through the body, each of the plurality of conduits having an opening extending to a processing surface of the body, and a coating disposed on the processing surface, the coating being about 50 microns to about 200 microns thick and comprising a coefficient of emissivity of about 0.8, an average surface roughness of about 180 micro-inches to about 220 micro-inches, and a porosity of about 15% or less.

摘要翻译： 本发明的实施例提供了应用于化学气相沉积工艺中使用的处理腔室部件的表面涂层的方法和装置。 在一个实施例中，该装置提供一种喷头装置，其包括主体，延伸穿过主体的多个导管，多个导管中的每一个具有延伸到主体的处理表面的开口，以及设置在处理表面上的涂层， 该涂层为约50微米至约200微米厚，并且包括约0.8的发射率系数，约180微英寸至约220微英寸的平均表面粗糙度，以及约15％或更小的孔隙率。

公开(公告)号：US20110308551A1

公开(公告)日：2011-12-22

申请号：US13041230

申请日：2011-03-04

申请人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J.K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

发明人： Hua Chung ,  Xizi Dong ,  Kyawwin Jason Maung ,  Hiroji Hanawa ,  Sang Won Kang ,  David H. Quach ,  Donald J.K. Olgado ,  David Bour ,  Wei-Yung Hsu ,  Alexander Tam ,  Anzhong Chang ,  Sumedh Acharya

IPC分类号： B08B9/00 ,  B08B3/04

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/45506 ,  C23C16/45591 ,  H01L21/02041 ,  H01L21/67115 ,  Y10S438/905

摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.

摘要翻译： 本发明的实施例一般涉及使用清洁板清洁腔室部件的设备和方法。 清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。 湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。 在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。 此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。 该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。 然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

公开(公告)号：US20120015502A1

公开(公告)日：2012-01-19

申请号：US13174530

申请日：2011-06-30

申请人： Jie Cui ,  David Bour ,  Wei-Yung Hsu

发明人： Jie Cui ,  David Bour ,  Wei-Yung Hsu

IPC分类号： H01L21/20 ,  C23C16/00

CPC分类号： H01L21/0254 ,  C30B25/02 ,  C30B29/403 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02579 ,  H01L21/0262

摘要： Methods and systems for the fabrication of p-GaN, and related, films utilizing a dedicated chamber in a multi-chamber tool are described. Also described are methods of fabricating a magnesium doped group III-V material layer, such as a GaN layer, with a sharp magnesium decay profile.

摘要翻译： 描述了利用多室工具中的专用室制造p-GaN和相关薄膜的方法和系统。 还描述了制造具有尖锐的镁衰变曲线的掺杂镁的III-V族材料层（例如GaN层）的方法。

公开(公告)号：US20080296594A1

公开(公告)日：2008-12-04

申请号：US12173424

申请日：2008-07-15

申请人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

发明人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

IPC分类号： H01L33/00

CPC分类号： H01L33/007

摘要： Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.

摘要翻译： 公开了具有非对称双面结构的氮化物光电器件和制造这种结构的方法。 两个n型III-N层同时形成在具有基本相同组成的衬底的相对侧上。 此后，在n型III-N层之一上形成p型III-N有源层，而不是在另一层上形成p型III-N有源层。

公开(公告)号：US20080124463A1

公开(公告)日：2008-05-29

申请号：US11564198

申请日：2006-11-28

申请人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi O. Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

发明人： David Bour ,  Lori Washington ,  Sandeep Nijhawan ,  Ronald Stevens ,  Jacob Smith ,  Alexander Tam ,  Nyi O. Myo ,  Steve Park ,  Rosemary Twist ,  Garry Kwong ,  Jie Su

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/45514 ,  C23C16/45572 ,  C23C16/45574

摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.

摘要翻译： 使用喷头将气体混合物沉积到基底表面上。 喷头的第一增压室具有与处理室的内部流体耦合的多个通道。 第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。 管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。 管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

公开(公告)号：US20110204376A1

公开(公告)日：2011-08-25

申请号：US12871617

申请日：2010-08-30

申请人： Jie Su ,  David Bour

发明人： Jie Su ,  David Bour

IPC分类号： H01L33/30 ,  H01L21/20

CPC分类号： H01L25/0756 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L27/156 ,  H01L33/0016 ,  H01L33/007 ,  H01L33/08 ,  H01L2224/48137 ,  H01L2924/0002

摘要： Apparatus and method for growth of non-p-type GaN layers over p-type GaN layers. Embodiments include multi-junction LED film stacks, multi-junction LED devices paired into units and multi-junction LED arrays of the paired units. Epitaxial growths of p-type and non-p-type material layers are split between epitaxial chambers clustered onto a single platform to reduce p-type dopant cross-contamination. Arrayed multi-junction LED devices provide improved packing density and reduced blinking during AC operation.

摘要翻译： 在p型GaN层上生长非p型GaN层的装置和方法。 实施例包括配对单元的多结LED膜堆叠，多结LED器件和成对单元的多结LED阵列。 将p型和非p型材料层的外延生长分为在单个平台上聚集的外延室之间以减少p型掺杂剂交叉污染。 阵列多结LED器件在交流运行期间提供改进的封装密度和减少的闪烁。