Vehicle canister
    1.
    发明授权
    Vehicle canister 有权
    车罐

    公开(公告)号:US07488376B2

    公开(公告)日:2009-02-10

    申请号:US11589383

    申请日:2006-10-30

    IPC分类号: B01D53/02 F02M33/02

    摘要: The vehicle canister comprising: the first chamber filled with the active carbon and funneled with the tank port, where the evaporating gas is infused through and the second chamber filled with the active carbon and funneled with the atmosphere port and neighboring the first chamber via the isolation wall. Also, it involves the vehicle canister installed in the canister housing which has the absorption and desorption improver to improve the absorption and desorption efficiency with heat conduction with temperature change of the active carbon occurred during the absorption and desorption of evaporation gas infused into the canister housing. The absorption and desorption improver is composed with the first and the second absorption and desorption improver.

    摘要翻译: 所述车辆罐包括:所述第一室填充有活性炭并与所述罐口漏斗,其中所述蒸发气体通过所述蒸发气体填充,所述第二室填充有活性炭,并且与所述气氛端口漏斗并且经由所述隔离件邻近所述第一室 壁。 此外,它涉及安装在罐壳体中的车辆罐,其具有吸收和解吸改进剂,以在吸入和解吸输入到罐壳体中的蒸发气体中发生的活性炭的温度变化的热传导下提高吸收和解吸效率 。 吸收和解吸改进剂由第一和第二吸收和解吸改进剂组成。

    Liquid crystal display and tablet computer having a chassis fastening member that receives a printed circuit board
    3.
    发明授权
    Liquid crystal display and tablet computer having a chassis fastening member that receives a printed circuit board 有权
    液晶显示器和平板计算机具有接收印刷电路板的底座紧固构件

    公开(公告)号:US08031291B2

    公开(公告)日:2011-10-04

    申请号:US12070243

    申请日:2008-02-15

    IPC分类号: G02F1/1333 G02F1/1345

    摘要: The present invention relates to a liquid crystal display and a tablet computer having the same. According to the present invention, there is provided a liquid crystal display, comprising: a liquid crystal display panel for displaying an image; a driving circuit unit connected to the liquid crystal display panel and including a printed circuit board mounted with a circuit component; a top chassis disposed over the liquid crystal display panel; and a fastening member for fastening the printed circuit board of the driving circuit unit to the top chassis.

    摘要翻译: 本发明涉及一种液晶显示器及具有该液晶显示器的平板计算机。 根据本发明,提供了一种液晶显示器,包括:用于显示图像的液晶显示面板; 连接到液晶显示面板并包括安装有电路部件的印刷电路板的驱动电路单元; 设置在液晶显示面板上的顶部底盘; 以及用于将驱动电路单元的印刷电路板紧固到顶部底架的紧固构件。

    Transistor structure and method for fabricating the same
    6.
    发明授权
    Transistor structure and method for fabricating the same 失效
    晶体管结构及其制造方法

    公开(公告)号:US5904516A

    公开(公告)日:1999-05-18

    申请号:US838607

    申请日:1997-04-09

    申请人: Sang Hoon Park

    发明人: Sang Hoon Park

    摘要: A transistor including an insulating file, a gate, and a source/drain all formed on a semiconductor substrate, wherein the gate overlaps at an edge thereof with the source/drain disposed below the gate, whereby the transistor has a structure capable of avoiding a direct contact between the metal wiring and the source/drain. The gate is formed after a formation of the source/drain.

    摘要翻译: 一种晶体管,其包括全部形成在半导体衬底上的绝缘文件,栅极和源极/漏极,其中栅极在其边缘处重叠,源极/漏极设置在栅极下方,由此晶体管具有能够避免 金属布线与源极/漏极之间的直接接触。 在形成源极/漏极之后形成栅极。

    Method of forming an NPN device
    10.
    发明授权
    Method of forming an NPN device 失效
    形成NPN器件的方法

    公开(公告)号:US06492237B2

    公开(公告)日:2002-12-10

    申请号:US09782820

    申请日:2001-02-12

    IPC分类号: H01L21331

    CPC分类号: H01L29/66287

    摘要: A method of forming an NPN semiconductor device includes the steps of forming a collector region within a substrate, forming a base region over the collector region, and forming an oxide-nitride-oxide stack over the base region. Once these three structures are formed, an opening is created through the oxide-nitride-oxide stack to expose the top surface of the base region. Then, a doped polysilicon material is used to fill the opening and make electrical contact to the base region. The use of the oxide-nitride-oxide stack with appropriate etching of the opening eliminates the exposure of the base region to reactive ion etch environment typical of prior art methods for forming NPN semiconductor devices. As an option, after the opening of the oxide-nitride-oxide stack is formed, a local oxidation of silicon (LOCOS) and etched can be preformed to create oxide spacers to line the opening wall above the base region.

    摘要翻译: 形成NPN半导体器件的方法包括以下步骤:在衬底内形成集电极区域,在集电极区域上形成基极区域,并在基极区域上形成氧化物 - 氮化物 - 氧化物堆叠体。 一旦形成这三个结构,就通过氧化物 - 氧化物 - 氧化物堆叠形成一个开口,露出基极区域的顶面。 然后,使用掺杂多晶硅材料来填充开口并与基极区域电接触。 通过对开口的适当蚀刻来使用氧化物 - 氮化物 - 氧化物堆叠消除了基底区域对用于形成NPN半导体器件的现有技术方法的典型的反应离子蚀刻环境的曝光。 作为选择,在形成氧化物 - 氮化物 - 氧化物堆叠的打开之后,可以预先形成硅(LOCOS)的局部氧化并蚀刻以形成氧化物间隔物以使基部区域上方的开口壁成线。