利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.033 秒)

    Semiconductor device using composition for anisotropic conductive adhesive film or anisotropic conductive adhesive film
    1.
    发明授权
    Semiconductor device using composition for anisotropic conductive adhesive film or anisotropic conductive adhesive film 有权
    使用各向异性导电粘合膜或各向异性导电粘合膜的组合物的半导体器件

    公开(公告)号：US09534154B2

    公开(公告)日：2017-01-03

    申请号：US13724219

    申请日：2012-12-21

    申请人： Jin Young Seo ,  Hyun Wook Kim ,  Hyun Hee Namkung ,  Kyung Il Sul ,  Dong Seon Uh ,  Kwang Jin Jung ,  Jae Sun Han

    发明人： Jin Young Seo ,  Hyun Wook Kim ,  Hyun Hee Namkung ,  Kyung Il Sul ,  Dong Seon Uh ,  Kwang Jin Jung ,  Jae Sun Han

    IPC分类号： H01B1/20 ,  C09J9/00 ,  C09J9/02 ,  C09J123/08

    CPC分类号： C09J9/02 ,  C08L33/14 ,  C08L75/04 ,  C09J123/0853 ,  H01B1/20

    摘要： An electronic device includes an anisotropic conductive adhesive film as a connection material, wherein the anisotropic conductive adhesive film has a flowability of 50% or more after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and a connection resistance increment greater than 0% but not greater than 25%, as calculated by Expression 1: Connection resistance increment (%)=|(A−B)/A|×100  (Expression 1) where A is a connection resistance measured after preliminary pressing at 80° C. and 1 MPa for 1 second and final pressing at 180° C. and 3 MPa for 5 seconds, and B is a connection resistance measured after reliability evaluation at a temperature of 85° C. and a humidity of 85% for 250 hours following preliminary pressing and final pressing.

    摘要翻译： 电子装置包括作为连接材料的各向异性导电粘合膜，其中各向异性导电粘合膜在80℃和1MPa预压1秒后的流动性为50％以上，最终在180℃下压制。 和3MPa 5秒，连接电阻增量大于0％但不大于25％，如式1所示：连接电阻增量（％）=（AB）/ A×100（表达式1）其中A为 在80℃，1MPa，1秒预压，180℃，3MPa，5秒的最后压制后测定的连接电阻，B为在85℃的温度下进行可靠性评价后测定的连接电阻 在预压和最终压制后250小时的湿度为85％。

    Gas etchant composition and method for simultaneously etching silicon oxide and polysilicon, and method for manufacturing semiconductor device using the same
    8.
    发明授权
    Gas etchant composition and method for simultaneously etching silicon oxide and polysilicon, and method for manufacturing semiconductor device using the same 有权
    用于同时蚀刻氧化硅和多晶硅的气体蚀刻剂组成和方法，以及使用其制造半导体器件的方法

    公开(公告)号：US06325676B1

    公开(公告)日：2001-12-04

    申请号：US09534971

    申请日：2000-03-27

    申请人： Kwang Jin Jung ,  Il Jeong Park

    发明人： Kwang Jin Jung ,  Il Jeong Park

    IPC分类号： H01L2100

    CPC分类号： H01L28/91 ,  H01L21/31055 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32137 ,  H01L27/10814 ,  H01L28/84

    摘要： A gas etchant composition and a method for simultaneously etching-back silicon oxide and polysilicon at substantially similar etching rates are used for manufacturing semiconductor devices. The gas etchant composition to be utilized for dry-etching includes carbon tetrafluoride gas and nitrogen gas mixed at a ratio of 25-40:1, while its etching rate ratio of polysilicon to silicon oxide is 0.8-1.2:1. Since polysilicon and silicon oxide are simultaneously etched by a single etching equipment utilizing the gas etchant composition in a single process, a composite layer having both polysilicon and silicon oxide can be effectively removed to obtain a resulting surface having a good profile. As a result, the formation of a polysilicon bridge caused by detachments of polysilicon particles in subsequent manufacturing processes can be prevented.

    摘要翻译： 用于制造半导体器件的气体蚀刻剂组合物和用于以基本相似的蚀刻速率同时蚀刻硅氧化物和多晶硅的方法。 用于干蚀刻的气体蚀刻剂组合物包括以25-40:1的比例混合的四氟化碳气体和氮气，而多晶硅与氧化硅的蚀刻速率比为0.8-1.2:1。 由于通过在单一工艺中利用气体蚀刻剂组合物的单一蚀刻设备同时蚀刻多晶硅和氧化硅，所以可以有效地去除具有多晶硅和氧化硅的复合层，以获得具有良好外形的所得表面。 结果，可以防止在随后的制造工艺中由多晶硅颗粒分离引起的多晶硅桥的形成。