公开(公告)号：US09972716B2

公开(公告)日：2018-05-15

申请号：US14826439

申请日：2015-08-14

申请人： Jin-Bum Kim ,  Seok-Hoon Kim ,  Chul Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Su-Jin Jung ,  Bon-Young Koo

发明人： Jin-Bum Kim ,  Seok-Hoon Kim ,  Chul Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Su-Jin Jung ,  Bon-Young Koo

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/32 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/3221 ,  H01L29/165 ,  H01L29/32 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/785

摘要： Provided are semiconductor devices that include an active pattern on a substrate, first and second gate electrodes on the active pattern and arranged in a first direction relative to one another and a first source/drain region in a first trench that extends into the active pattern between the first and second gate electrodes. The first source/drain region includes a first epitaxial layer that is configured to fill the first trench and that includes at least one plane defect that originates at a top portion of the first epitaxial layer and extends towards a bottom portion of the first epitaxial layer.

公开(公告)号：US09368495B2

公开(公告)日：2016-06-14

申请号：US14576368

申请日：2014-12-19

申请人： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

发明人： Seok-Hoon Kim ,  Jin-Bum Kim ,  Kwan-Heum Lee ,  Byeong-Chan Lee ,  Cho-Eun Lee ,  Jin-Hee Han ,  Bon-Young Koo

IPC分类号： H01L21/00 ,  H01L27/088 ,  H01L27/02 ,  H01L29/78

CPC分类号： H01L27/0886 ,  H01L21/823431 ,  H01L21/823475 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1104 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/78 ,  H01L29/7842 ,  H01L29/7849 ,  H01L29/785

摘要： A semiconductor device includes a substrate, a first active fin and a second active fin on the substrate, respectively, a plurality of first epitaxial layers on the first active fin and on the second active fin, respectively, a plurality of second epitaxial layers on the plurality of first epitaxial layers, a bridge layer connecting the plurality of second epitaxial layers to each other, and a third epitaxial layer on the bridge layer.

摘要翻译： 半导体器件分别在衬底上包括衬底，第一有源鳍片和第二有源鳍片，分别在第一有源鳍片和第二有源鳍片上的多个第一外延层，多个第二外延层， 多个第一外延层，将多个第二外延层彼此连接的桥接层以及桥接层上的第三外延层。

公开(公告)号：US09595611B2

公开(公告)日：2017-03-14

申请号：US14262712

申请日：2014-04-26

申请人： Seok-Hoon Kim ,  Bon-Young Koo ,  Nam-Kyu Kim ,  Woo-Bin Song ,  Byeong-Chan Lee ,  Su-Jin Jung

发明人： Seok-Hoon Kim ,  Bon-Young Koo ,  Nam-Kyu Kim ,  Woo-Bin Song ,  Byeong-Chan Lee ,  Su-Jin Jung

IPC分类号： H01L29/78 ,  H01L21/8234 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/785 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/6681

摘要： A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

摘要翻译： 半导体器件可以包括在衬底上并排形成的第一和第二鳍片，形成在第一鳍片上并具有杂质的第一掺杂浓度的第一升高掺杂区域，形成在第二鳍片上的第二高掺杂区域， 将第一升高掺杂区域和第二升高掺杂区域彼此连接的桥。 还公开了制造这种半导体器件的方法。

公开(公告)号：US09793356B2

公开(公告)日：2017-10-17

申请号：US14824057

申请日：2015-08-11

申请人： Jeong-Ho Yoo ,  Byeong-Chan Lee ,  Hyun-Ho Noh ,  Yong-Kook Park ,  Bon-Young Koo ,  Jin-Yeong Joe

发明人： Jeong-Ho Yoo ,  Byeong-Chan Lee ,  Hyun-Ho Noh ,  Yong-Kook Park ,  Bon-Young Koo ,  Jin-Yeong Joe

IPC分类号： H01L29/16 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/66 ,  H01L27/092 ,  H01L27/12

CPC分类号： H01L29/1608 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： A semiconductor device may have a structure that prevents or reduces an etching amount of certain portions, such as a part of a source/drain region. Adjacent active fins may be merged with a blocking layer extending between adjacent the source/drain region. The blocking layer may be of a material that is relatively high-resistant to the etchant.

公开(公告)号：US20110045647A1

公开(公告)日：2011-02-24

申请号：US12916718

申请日：2010-11-01

申请人： Jin-Hwa Heo ,  Chul-Sung Kim ,  Bon-Young Koo ,  Ki-Hyun Hwang ,  Chang-Hyun Lee

发明人： Jin-Hwa Heo ,  Chul-Sung Kim ,  Bon-Young Koo ,  Ki-Hyun Hwang ,  Chang-Hyun Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/792 ,  H01L21/28202 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/518

摘要： A non-volatile memory device includes a dielectric layer between a charge storage layer and a substrate. Free bonds of the dielectric layer can be reduced to reduce/prevent charges from leaking through the free bonds and/or from being trapped by the free bonds. As a result, data retention properties and/or durability of a non-volatile memory device may be enhanced.

摘要翻译： 非易失性存储器件包括电荷存储层和衬底之间的电介质层。 可以减少电介质层的自由键，以减少/防止电荷通过游离键泄漏和/或被游离键捕获。 结果，可以增强非挥发性存储器件的数据保持性能和/或耐久性。

公开(公告)号：US20070228911A1

公开(公告)日：2007-10-04

申请号：US11730538

申请日：2007-04-02

申请人： Jong-Gon Kim ,  Oh-Chul Kwon ,  Yoo-Min Park ,  Young-Hoon Gwak ,  Hyeon-Po Cho ,  Bon-Young Koo ,  Myung-Soo Kim ,  Suk-Hyoun Cho

发明人： Jong-Gon Kim ,  Oh-Chul Kwon ,  Yoo-Min Park ,  Young-Hoon Gwak ,  Hyeon-Po Cho ,  Bon-Young Koo ,  Myung-Soo Kim ,  Suk-Hyoun Cho

IPC分类号： A47B96/04

CPC分类号： F25D23/067 ,  F25D23/064

摘要： A refrigerator comprises: an inner case that forms a storage space; a plurality of fixing members coupled to the inner case so as to be protruding to the storage space, for preventing a foaming agent applied to a rear surface of the inner case from leaking to the storage space; and a guide rail fixedly-coupled to the fixing members, and to which a storage means is slidably coupled. Since components for slidably coupling a storage means to the inner case are simplified and an assembly process is facilitated, a production cost is reduced and a productivity is enhanced. Furthermore, the components for slidably coupling the storage means to the inner case are firmly coupled to the inner case, and a foaming agent is prevented from leaking to inside of the inner case, thereby enhancing the reliability of the product.

摘要翻译： 冰箱包括：形成存储空间的内壳; 多个固定构件，其联接到所述内壳体以便突出到所述存储空间，用于防止施加到所述内壳体的后表面的发泡剂泄漏到所述存储空间; 以及固定地连接到固定构件的导轨，并且存储装置可滑动地连接在该导轨上。 由于用于将存储装置可滑动地联接到内壳的部件被简化并且容易组装过程，因此降低了生产成本并提高了生产率。 此外，用于将存储装置可滑动地联接到内壳的部件牢固地联接到内壳，并且防止发泡剂泄漏到内壳的内部，从而增强了产品的可靠性。

公开(公告)号：US20070167030A1

公开(公告)日：2007-07-19

申请号：US11639164

申请日：2006-12-15

申请人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

发明人： Jung-Geun Jee ,  Young-Jin Noh ,  Bon-Young Koo ,  Chul-Sung Kim ,  Hun-Hyeoung Leam ,  Woong Lee

IPC分类号： H01L21/31

CPC分类号： H01L21/3144 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662 ,  H01L27/115 ,  H01L27/11521

摘要： In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation structure may have a thickness substantially the same as that of a central portion of the insulation structure so that the insulation structure may have a uniform thickness and improved insulation characteristics. When the insulation structure is employed as a tunnel insulation layer of a semiconductor device, the semiconductor device may have enhanced endurance and improved electrical characteristics because a threshold voltage distribution of cells in the semiconductor device may become uniform.

摘要翻译： 在形成绝缘结构的方法中，通过至少一个氧化工艺在物体上形成至少一个氧化物层，然后通过至少一个硝化工艺从氧化物层形成至少一个氮化物层。 绝缘结构的边缘部分可以具有与绝缘结构的中心部分的厚度基本相同的厚度，使得绝缘结构可以具有均匀的厚度和改善的绝缘特性。 当采用绝缘结构作为半导体器件的隧道绝缘层时，由于半导体器件中的单元的阈值电压分布可能变得均匀，所以半导体器件可以具有增强的耐久性和改善的电特性。

公开(公告)号：US07218942B2

公开(公告)日：2007-05-15

申请号：US10641152

申请日：2003-08-15

申请人： Bon-Young Koo ,  Young-Shim Kim

发明人： Bon-Young Koo ,  Young-Shim Kim

IPC分类号： H04Q7/20

CPC分类号： H04W48/16 ,  H04W76/10 ,  H04W88/06 ,  H04W88/10

摘要： A method for transmitting a call signal through a digital channel while in an analog area is provided which allows for enhanced speech and transmission quality while in the analog area. When a call is originated in an analog area, a mobile communication terminal scans a most recently used (MRU) table to locate a digital channel which matches a digital channel available in the analog area. If there is a match, the call is placed through the available digital channel. If none of the digital channels in the MRU table matches the available digital channel, then the call is placed through an analog channel.

摘要翻译： 提供一种用于在模拟区域中通过数字通道发送呼叫信号的方法，其允许在模拟区域中增强语音和传输质量。 当呼叫发生在模拟区域时，移动通信终端扫描最近使用的（MRU）表以定位与模拟区域中可用的数字信道相匹配的数字信道。 如果有匹配，则通过可用的数字频道进行呼叫。 如果MRU表中的数字通道都不匹配可用的数字通道，则通过模拟通道进行通话。

公开(公告)号：US20050285162A1

公开(公告)日：2005-12-29

申请号：US11159596

申请日：2005-06-23

申请人： Chul-Sung Kim ,  Jin-Hwa Heo ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Dong-Chan Kim ,  Jeong-Do Ryu

发明人： Chul-Sung Kim ,  Jin-Hwa Heo ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Dong-Chan Kim ,  Jeong-Do Ryu

IPC分类号： H01L21/8244 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/78

CPC分类号： H01L27/0688 ,  H01L21/8221

摘要： Methods of forming a semiconductor device having stacked structures include forming a first semiconductor structure on a substrate and forming a first interlayer insulating layer on the substrate. The first interlayer insulating layer has a substantially level upper face. A semiconductor layer is formed on the first interlayer insulating layer and a first gate insulation layer is formed on the semiconductor layer at a processing temperature selected to control damage to the first semiconductor structure. A second semiconductor structure is formed on the first gate insulation layer.

摘要翻译： 形成具有堆叠结构的半导体器件的方法包括在衬底上形成第一半导体结构并在衬底上形成第一层间绝缘层。 第一层间绝缘层具有基本上平坦的上表面。 在第一层间绝缘层上形成半导体层，在半导体层上形成第一栅极绝缘层，该处理温度被选择为控制第一半导体结构的损坏。 在第一栅绝缘层上形成第二半导体结构。

公开(公告)号：US06930062B2

公开(公告)日：2005-08-16

申请号：US10850690

申请日：2004-05-21

申请人： Sang-Jin Hyun ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Sug-Hun Hong ,  Taek-Soo Jeon ,  Jeong-do Ryu

发明人： Sang-Jin Hyun ,  Yu-Gyun Shin ,  Bon-Young Koo ,  Sug-Hun Hong ,  Taek-Soo Jeon ,  Jeong-do Ryu

IPC分类号： H01L21/336 ,  H01L21/316 ,  H01L21/762 ,  H01L21/26

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/02337 ,  H01L21/31662 ,  H01L21/76235

摘要： A method of forming an oxide layer on a semiconductor substrate includes thermally oxidizing a surface of the substrate to form an oxide layer on the substrate, and then exposing the oxide layer to an ambient including predominantly oxygen radicals to thereby thicken the oxide layer. Related methods of fabricating a recessed gate transistor are also discussed.

摘要翻译： 在半导体衬底上形成氧化物层的方法包括热氧化衬底的表面以在衬底上形成氧化物层，然后将氧化物层暴露于主要包含氧自由基的环境，从而使氧化物层变厚。 还讨论了制造凹陷栅极晶体管的相关方法。