利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

33 条记录 (耗时 0.027 秒)

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160268287A1

    公开(公告)日：2016-09-15

    申请号：US15047882

    申请日：2016-02-19

    申请人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Dae-Seok BYEON

    发明人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Dae-Seok BYEON

    IPC分类号： H01L27/115 ,  H01L29/792

    CPC分类号： H01L27/11575 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582

    摘要： A semiconductor device includes a substrate including cell and dummy regions, first channel structures on the cell region and extending in a first direction vertical with respect to the substrate, gate lines surrounding outer sidewalls of the first channel structures and extending in a second direction parallel to the substrate, the gate lines being spaced apart from each other along the first direction, cutting lines between the gate lines on the cell region and extending in the second direction, dummy patterns spaced apart from each other along the first direction on the dummy region, the dummy patterns having a stepped shape along a third direction parallel to the top surface of the substrate and perpendicular to the second direction, at least a portion of the dummy patterns including a same conductive material as that in the gate lines, and dummy lines through the dummy patterns.

    摘要翻译： 一种半导体器件包括：包括单元和虚设区域的基板，单元区域上的第一通道结构，并且相对于基板垂直于第一方向延伸;栅极线，其围绕第一通道结构的外侧壁延伸，并且沿第二方向平行延伸 所述基板，所述栅极线沿着所述第一方向彼此间隔开，在所述单元区域上的所述栅极线之间切割并沿所述第二方向延伸，在所述虚拟区域上沿着所述第一方向彼此间隔开的虚拟图案， 所述虚拟图案沿着与所述基板的顶面平行且垂直于所述第二方向的第三方向具有台阶状，所述虚设图案的至少一部分包括与所述栅极线相同的导电性材料， 虚拟模式。

    WIRING STRUCTURES
    2.
    发明申请
    WIRING STRUCTURES 审中-公开
    接线结构

    公开(公告)号：US20120318567A1

    公开(公告)日：2012-12-20

    申请号：US13495216

    申请日：2012-06-13

    申请人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Joon-Hee LEE ,  Jai-Hyuk SONG ,  Sang-Youn JO

    发明人： Jong-Hyun PARK ,  Jee-Yong KIM ,  Joon-Hee LEE ,  Jai-Hyuk SONG ,  Sang-Youn JO

    IPC分类号： H05K1/11 ,  H05K1/02 ,  H05K1/09

    CPC分类号： H01L23/522 ,  H01L21/76834 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A wiring structure includes a first plug extending through a first insulating interlayer on a substrate, a first wiring extending through a second insulating interlayer on the first insulating interlayer and the first wiring is electrically connected to the first plug, a diffusion barrier layer pattern on the first wiring and on the second insulating interlayer, a portion of the second insulating interlayer being free of being covered by the diffusion barrier layer pattern, a second plug extending through the diffusion barrier layer pattern, the second plug is in contact with the first wiring, and a second wiring electrically connected to the second plug.

    摘要翻译： 布线结构包括延伸穿过基板上的第一绝缘夹层的第一插塞，延伸穿过第一绝缘夹层上的第二绝缘夹层的第一布线和第一布线电连接到第一插头，扩散阻挡层图案 第一布线并且在第二绝缘中间层上，第二绝缘中间层的一部分不被扩散阻挡层图案覆盖，延伸穿过扩散阻挡层图案的第二插塞，第二插塞与第一布线接触， 以及电连接到第二插头的第二布线。

    THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20110084276A1

    公开(公告)日：2011-04-14

    申请号：US12753732

    申请日：2010-04-02

    申请人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    发明人： Jin-Hee KANG ,  Chun-Gi YOU ,  Sun PARK ,  Jong-Hyun PARK ,  Yul-Kyu LEE

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/78609 ,  H01L29/78618

    摘要： A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.

    摘要翻译： 公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层 超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。 阻挡层介于半导体层和欧姆接触层之间。 因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。

    TERMINAL AND METHOD FOR PROVIDING TERMINAL POSITION
    6.
    发明申请
    TERMINAL AND METHOD FOR PROVIDING TERMINAL POSITION 审中-公开
    终端和终端提供方法

    公开(公告)号：US20100137001A1

    公开(公告)日：2010-06-03

    申请号：US12582570

    申请日：2009-10-20

    申请人： Youngsu CHO ,  Byung Doo KIM ,  Seong Yun CHO ,  Sung Jo YUN ,  Sun-Joong KIM ,  Wan Sik CHOI ,  Jong-Hyun PARK

    发明人： Youngsu CHO ,  Byung Doo KIM ,  Seong Yun CHO ,  Sung Jo YUN ,  Sun-Joong KIM ,  Wan Sik CHOI ,  Jong-Hyun PARK

    IPC分类号： H04W24/00 ,  H04B1/38

    CPC分类号： H04W48/20 ,  H04W64/00 ,  H04W88/06 ,  Y02D70/122 ,  Y02D70/14

    摘要： The present invention relates to a terminal and a terminal location providing method. The terminal for selectively accessing a plurality of base stations supporting different communication systems includes a first network interface card that is turned on when the terminal is turned on, a second network interface card that is turned on or activated when receiving the terminal's location information request, a power controller for controlling power of the first and second network interface cards, and a processor for receiving the terminal's location information request and controlling the power of the first and second network interface cards through the power controller.

    摘要翻译： 本发明涉及终端和终端位置提供方法。 用于选择性地访问支持不同通信系统的多个基站的终端包括当终端被接通时被接通的第一网络接口卡，当接收终端的位置信息请求时被接通或激活的第二网络接口卡， 用于控制第一和第二网络接口卡的电力的功率控制器，以及用于接收终端的位置信息请求并通过功率控制器控制第一和第二网络接口卡的电力的处理器。

    METHOD FOR PROVIDING RADIO FREQUENCY IDENTIFICATION APPLICATION INTERFACE AND SYSTEM THEREOF
    7.
    发明申请
    METHOD FOR PROVIDING RADIO FREQUENCY IDENTIFICATION APPLICATION INTERFACE AND SYSTEM THEREOF 审中-公开
    提供无线电频率识别应用接口及其系统的方法

    公开(公告)号：US20090140843A1

    公开(公告)日：2009-06-04

    申请号：US12256147

    申请日：2008-10-22

    申请人： Hyo Chan BANG ,  Jee Sook EUN ,  Se Won OH ,  Jae Heum LEE ,  Jong-Hyun PARK ,  Hyung-Jin AHN ,  Kwang-Hoon KIM

    发明人： Hyo Chan BANG ,  Jee Sook EUN ,  Se Won OH ,  Jae Heum LEE ,  Jong-Hyun PARK ,  Hyung-Jin AHN ,  Kwang-Hoon KIM

    IPC分类号： H04Q5/22

    CPC分类号： G06F9/545 ,  G06F9/541

    摘要： The present invention relates to an RFID application interface method and a system thereof. In the present invention, an RFID middleware system changes a control request input from a user or an RFID application system according to a communication protocol of an RFID device to be controlled, and sends it to the RFID device. Also, when the user or the RFID application system inputs a data process policy that is common to various RFID devices of a logical RFID device group, the RFID middleware system generates data process rules that are suitable for communication capability and data processing capability of each RFID device based on the data process policy and provides an interface that allows processing of data by a corresponding RFID device. In addition, the RFID middle system defines a procedural flow of at least one of services and at least one of tasks that constitute an RFID business process and provides an interface to support interconnection and cooperation of services that are included in the RFID business process.

    摘要翻译： 本发明涉及一种RFID应用接口方法及其系统。 在本发明中，RFID中间件系统根据要控制的RFID装置的通信协议改变来自用户或RFID应用系统的控制请求，并将其发送给RFID装置。 此外，当用户或RFID应用系统输入逻辑RFID设备组的各种RFID设备共有的数据处理策略时，RFID中间件系统生成适合于每个RFID的通信能力和数据处理能力的数据处理规则 基于数据处理策略的设备，并提供允许由相应RFID设备处理数据的接口。 另外，RFID中间系统定义了至少一个服务的程序流程，以及构成RFID业务流程的任务中的至少一个，并且提供了支持RFID业务流程中包括的服务的互连和协作的接口。

    THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVNG THE SAME
    10.
    发明申请
    THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVNG THE SAME 有权
    薄膜晶体管和显示器件

    公开(公告)号：US20130270538A1

    公开(公告)日：2013-10-17

    申请号：US13898186

    申请日：2013-05-20

    申请人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

    发明人： Jong-Hyun PARK ,  Chun-Gi YOU ,  Sun PARK ,  Jin-Hee KANG ,  Yul-Kyu LEE

    IPC分类号： H01L51/52 ,  H01L29/786

    CPC分类号： H01L51/5281 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/3262 ,  H01L27/3272 ,  H01L29/66765 ,  H01L29/78678

    摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.

    摘要翻译： 薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定 在其表面的最低峰和最高峰之间的距离小于约15nm。