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    ELECTRO DEVICE EMBEDDED PRINTED CIRCUIT BOARD AND MANUFACTURNG METHOD THEREOF
    1.
    发明申请
    ELECTRO DEVICE EMBEDDED PRINTED CIRCUIT BOARD AND MANUFACTURNG METHOD THEREOF 审中-公开
    电子设备嵌入式印刷电路板及其制造方法

    公开(公告)号：US20110214913A1

    公开(公告)日：2011-09-08

    申请号：US12849624

    申请日：2010-08-03

    申请人： Jin-Won Lee ,  Yul-Kyo Chung ,  Dae-Jung Byun ,  Seung-Hyun Sohn

    发明人： Jin-Won Lee ,  Yul-Kyo Chung ,  Dae-Jung Byun ,  Seung-Hyun Sohn

    IPC分类号： H05K1/16 ,  H05K3/30

    CPC分类号： H05K1/16 ,  H01L24/19 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2924/14 ,  H01L2924/351 ,  H05K3/30 ,  Y10T29/4913 ,  H01L2924/00

    摘要： An electro device embedded printed circuit board and a manufacturing method thereof are disclosed. In accordance with an embodiment of the present invention, an electro device embedded printed circuit board is manufactured by: adhering an electro device on an upper surface of a supporting body; stacking a pure resin layer and an insulating reinforcing layer on an upper side of the supporting body, wherein the electro device is embedded in the pure resin layer; removing the supporting body; stacking an insulation layer on a lower side of the electro device, a reinforcing material having been impregnated in the insulation layer; and patterning a circuit on each of the reinforcing layer and the insulation layer.

    摘要翻译： 公开了电子装置嵌入式印刷电路板及其制造方法。 根据本发明的实施例，电子装置嵌入式印刷电路板通过以下方式制造：将电子装置粘附在支撑体的上表面上; 在支撑体的上侧堆叠纯树脂层和绝缘增强层，其中电子器件嵌入纯树脂层中; 去除支撑体; 在电气设备的下侧堆叠绝缘层，浸渍在绝缘层中的增强材料; 并且在每个加强层和绝缘层上构图电路。

    Thin film transistor array substrate and method of fabricating the same
    2.
    发明授权
    Thin film transistor array substrate and method of fabricating the same 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号：US08994023B2

    公开(公告)日：2015-03-31

    申请号：US13115088

    申请日：2011-05-24

    申请人： Hye-Young Ryu ,  Woo-Geun Lee ,  Young-Joo Choi ,  Kyoung-Jae Chung ,  Jin-Won Lee ,  Seung-Ha Choi ,  Hee-Jun Byeon ,  Pil-Sang Yun

    发明人： Hye-Young Ryu ,  Woo-Geun Lee ,  Young-Joo Choi ,  Kyoung-Jae Chung ,  Jin-Won Lee ,  Seung-Ha Choi ,  Hee-Jun Byeon ,  Pil-Sang Yun

    IPC分类号： H01L47/00 ,  H01L29/10 ,  H01L29/04 ,  H01L29/15 ,  H01L27/12

    CPC分类号： H01L27/1214 ,  H01L27/1225 ,  H01L27/1255

    摘要： A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.

    摘要翻译： 提供了能够降低由于氧化物半导体图案的劣化引起的器件劣化的薄膜晶体管阵列基板及其制造方法。 薄膜晶体管阵列基板可以包括其上形成有栅极的绝缘基板，形成在绝缘基板上的栅极绝缘膜，设置在栅极绝缘膜上的氧化物半导体图案，形成在氧化物半导体上的抗蚀刻图案 图案，以及形成在防蚀刻图案上的源电极和漏电极。 氧化物半导体图案可以包括位于源电极和漏电极之间的边缘部分，并且边缘部分可以包括至少一个导电区域和至少一个非导电区域。

    Dust remover for charge-coupled device
    3.
    发明授权
    Dust remover for charge-coupled device 有权
    电荷耦合器件除尘器

    公开(公告)号：US08950036B2

    公开(公告)日：2015-02-10

    申请号：US12965239

    申请日：2010-12-10

    申请人： Wataru Kaihotsu ,  Jeong-Hyun Shim ,  Jin-Won Lee

    发明人： Wataru Kaihotsu ,  Jeong-Hyun Shim ,  Jin-Won Lee

    IPC分类号： H04N5/225

    CPC分类号： H04N5/2254

    摘要： A dust remover according to the present disclosure forms an air flow in a space formed between a charge-coupled device and a shutter unit, and removes dust on a surface of the charge-coupled device, the dust remover comprising an air injector having a plurality of air injecting holes; an air discharger which is installed on a surface facing the air injector, and has at least one air discharging hole which is smaller than the air injecting hole; and an exhausting dust collecting filter which is installed in the air discharger, and collects dust in the air being discharged.

    摘要翻译： 根据本公开的除尘器在形成在电荷耦合器件和快门单元之间的空间中形成空气流，并去除电荷耦合器件表面上的灰尘，除尘器包括具有多个 空气注入孔; 安装在面向空气喷射器的表面上的排气器，并且具有比空气喷射孔小的至少一个排气孔; 以及安装在排气器中的排出的集尘过滤器，并且收集被排出的空气中的灰尘。

    Pseudomonas aeruginosa strain developed for improving fatty acid content, and method of manufacturing the same
    4.
    发明授权
    Pseudomonas aeruginosa strain developed for improving fatty acid content, and method of manufacturing the same 有权
    开发用于改善脂肪酸含量的绿脓假单胞菌菌株及其制造方法

    公开(公告)号：US08735110B2

    公开(公告)日：2014-05-27

    申请号：US13642127

    申请日：2011-03-07

    申请人： Jin-Won Lee ,  Sun-Hee Lee ,  Eun-Young Jeon

    发明人： Jin-Won Lee ,  Sun-Hee Lee ,  Eun-Young Jeon

    IPC分类号： C12P7/64 ,  C12N1/12

    CPC分类号： C12N15/52 ,  C12N9/1029 ,  C12N9/16 ,  C12N9/93 ,  C12P7/6409 ,  C12P7/6463 ,  C12Y203/01039 ,  C12Y301/02014 ,  C12Y604/01002

    摘要： Disclosed are novel Pseudomonas aeruginosa strains capable of producing in high yield and preparation methods thereof. The strains anchor an expression vector carrying either or both of a nucleotide sequence coding for acetyl-CoA carboxylase carboxytransferase subunit alpha of Pseudomonas aeruginosa and a nucleotide sequence coding for malonyl-CoA-[acyl-carrier-protein] transacylase of Pseudomonas aeruginosa, and/or a nucleotide sequence coding for acyl-acyl carrier protein thioesterase of Streptococcus pyogenes. The recombinant Pseudomonas aeruginosa strains are genetically stable and have high lipid or fatty acid contents, thus being applicable to the mass production of fatty acids.

    摘要翻译： 公开了能够高产量生产的新型铜绿假单胞菌菌株及其制备方法。 菌株锚定携带编码铜绿假单胞菌的乙酰辅酶A羧化酶羧基转移酶亚基α的核苷酸序列的一个或两个的表达载体和编码铜绿假单胞菌的丙二酰-CoA- [酰基 - 载体 - 蛋白]转酰酶的核苷酸序列和/ 或编码化脓性链球菌的酰基酰基载体蛋白硫酯酶的核苷酸序列。 重组铜绿假单胞菌在遗传上具有稳定性，脂质含量高，脂肪酸含量高，适用于大量生产脂肪酸。

    Focal plane shutter and camera having the same
    6.
    发明授权
    Focal plane shutter and camera having the same 有权
    焦平面快门和相机具有相同的功能

    公开(公告)号：US08287196B2

    公开(公告)日：2012-10-16

    申请号：US12969227

    申请日：2010-12-15

    申请人： Hae-In Chung ,  Jin-Won Lee

    发明人： Hae-In Chung ,  Jin-Won Lee

    IPC分类号： G03B9/08

    CPC分类号： G03B9/32

    摘要： A focal plane shutter having a front film and a back film which expose a charge-coupled device to light as they move back and forth between a cover plate and a base plate, between a charging position and a discharging position at a certain time interval. The focal plane shutter includes at least one lever member which is connected to the front film and/or back film, and which amplifies an impact force generated during a charging and a discharging movement of the front film and/or back film using a lever action. An elevating member slides in a direction parallel with the movement of the front film and/or back film by the impact force amplified in the lever member. An impact absorbing unit regulates the sliding movement of the elevating member to absorb impact energy generated by the movement and stop of the front film and/or back film.

    摘要翻译： 具有前膜和背膜的焦平面快门，当电荷耦合器件在盖板和基板之间来回移动时，以一定的时间间隔在充电位置和放电位置之间曝光。 焦平面快门包括至少一个杠杆构件，其连接到前膜和/或后膜，并且利用杠杆动作放大在前膜和/或后膜的充电和排出运动期间产生的冲击力 。 升降构件通过在杆构件中放大的冲击力沿与前膜和/或后膜的移动平行的方向滑动。 冲击吸收单元调节升降构件的滑动运动，以吸收由前膜和/或后膜的运动和停止产生的冲击能。

    THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管，具有该薄膜晶体管的阵列基板及其制造方法

    公开(公告)号：US20110284852A1

    公开(公告)日：2011-11-24

    申请号：US13049783

    申请日：2011-03-16

    申请人： Ki-Won KIM ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

    发明人： Ki-Won KIM ,  Kap-Soo Yoon ,  Woo-Geun Lee ,  Yeong-Keun Kwon ,  Hye-Young Ryu ,  Jin-Won Lee ,  Hyun-Jung Lee

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/78645 ,  H01L29/78648

    摘要： A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

    摘要翻译： 薄膜晶体管包括半导体图案，第一栅电极，源电极，漏电极和第二栅电极。 半导体图案形成在基板上。 第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。 第二导电层具有图案，其包括电连接到半导体图案的源电极，与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。 第二栅电极与半导体图案，源电极和漏电极电绝缘。

    FOCAL PLANE SHUTTER AND CAMERA HAVING THE SAME
    9.
    发明申请
    FOCAL PLANE SHUTTER AND CAMERA HAVING THE SAME 有权
    具有相同功能的FOCAL PLANE SHUTTER和CAMERA

    公开(公告)号：US20110150457A1

    公开(公告)日：2011-06-23

    申请号：US12969227

    申请日：2010-12-15

    申请人： Hae-In CHUNG ,  Jin-Won Lee

    发明人： Hae-In CHUNG ,  Jin-Won Lee

    IPC分类号： G03B9/32

    CPC分类号： G03B9/32

    摘要： A focal plane shutter having a front film and a back film which expose a charge-coupled device to light as they move back and forth between a cover plate and a base plate, between a charging position and a discharging position at a certain time interval. The focal plane shutter includes at least one lever member which is connected to the front film and/or back film, and which amplifies an impact force generated during a charging and a discharging movement of the front film and/or back film using a lever action. An elevating member slides in a direction parallel with the movement of the front film and/or back film by the impact force amplified in the lever member. An impact absorbing unit regulates the sliding movement of the elevating member to absorb impact energy generated by the movement and stop of the front film and/or back film.

    摘要翻译： 具有前膜和背膜的焦平面快门，当电荷耦合器件在盖板和基板之间来回移动时，以一定的时间间隔在充电位置和放电位置之间曝光。 焦平面快门包括至少一个杠杆构件，其连接到前膜和/或后膜，并且利用杠杆动作放大在前膜和/或后膜的充电和排出运动期间产生的冲击力 。 升降构件通过在杆构件中放大的冲击力沿与前膜和/或后膜的移动平行的方向滑动。 冲击吸收单元调节升降构件的滑动运动，以吸收由前膜和/或后膜的运动和停止产生的冲击能。