摘要:
The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.
摘要:
The specification discloses a structure and method for measuring the etching speed. A test layer is connected with several resistors. Etching the metal layer disconnects in order the resistors from the circuit. The equivalent resistance of the sensing resistor system is measured to obtain the etching speed. In consideration of the errors of the resistors, the invention also provides a structure that utilizes an IC layout technique to put an interdigitized dummy resistor beside the sensing resistors. By taking the ratio of the equivalent resistance of the sensing resistors and the dummy resistor, the invention can compute to obtain the etching speed.
摘要:
A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.
摘要:
A driving method for a panel structure including at least two liquid crystal layers is disclosed. The liquid crystal layers display different colors. When the panel structure includes a first liquid crystal layer and a second liquid crystal layer, the first and the second liquid crystal layers are initialized. A light source is utilized to emit the first and the second liquid crystal layers to write data to at least one of the first and the second liquid crystal layers. When the panel structure further includes a third liquid crystal layer, the first, the second and the third liquid crystal layers are first initialized. A light source is utilized to emit the first, the second and the third liquid crystal layers to write data to at least one of the first, the second and the third liquid crystal layers.
摘要:
A system for dynamic gamma correction of multi-scaled clocks and method therefor are provided, wherein multi-scaled clocks are applied to control the grayscale upon only one set of ramp voltage, so that the linearity of the gamma curve can be adjusted freely or to adjust the gamma correction strategy based on the image content or the user preference.
摘要:
Disclosed is a flexible radiation detector including a substrate, a switching device on the substrate, an energy conversion layer on the switching device, a top electrode layer on the energy conversion layer, a first phosphor layer on the top electrode layer, and a second phosphor layer under the substrate.
摘要:
A human-machine interface device suitable for being electrically connected to an electronic device. The human-machine interface device includes a flexible carrier having at least one flexible portion, a bending sensor, and a control module. The bending sensor is disposed on the flexible portion of the flexible carrier. The control module is disposed on the carrier, connected to the bending sensor, and electrically connected to the electronic device. A first operation signal from the bending sensor is transmitted to the electronic device through the control module so that the electronic device performs according to the first operation signal.
摘要:
An image display comprises at least one display device having a first pair of transparent conductive layers, a second pair of transparent conductive layers spaced apart from the first pair transparent conductive layers, a display layer disposed between the first pair of transparent conductive layers, the display layer configured to display an image in response to a first set of voltages applied to the first pair of transparent conductive layers, and a light control layer disposed between the second pair of transparent conductive layers, the light control layer configured to operate in one of a transmissive mode to allow an incident light to pass toward the display layer and a reflective mode to reflect an incident light away from the display layer in response to a second set of voltages applied to the second pair of transparent conductive layers.
摘要:
An image display comprises at least one display device having a first pair of transparent conductive layers, a second pair of transparent conductive layers spaced apart from the first pair transparent conductive layers, a display layer disposed between the first pair of transparent conductive layers, the display layer configured to display an image in response to a first set of voltages applied to the first pair of transparent conductive layers, and a light control layer disposed between the second pair of transparent conductive layers, the light control layer configured to operate in one of a transmissive mode to allow an incident light to pass toward the display layer and a reflective mode to reflect an incident light away from the display layer in response to a second set of voltages applied to the second pair of transparent conductive layers.
摘要:
A liquid-based gravity-driven etching-stop technique for controlling structure dimension is provided, where opposite etching trenches in cooperation with an etching-stop solution are used for controlling the dimension of a microstructure on the wafer level. In an embodiment, opposite trenches surrounding the microstructure are respectively etched on sides of the wafer, and the trench depth on the side of the wafer, on which the microstructure is, is equal to the design dimension of the microstructure. Contrarily, it is unnecessary to define the trench depth on the back-side of the chip. In the final step of the fabrication process, when the device is etched, such that the trenches on the sides communicate with each other to separate the microstructure from the whole wafer automatically and thereby shift from the etchant into the etching-stop solution to stop etching.