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    Method to Pattern Metallized Substrates Using a High Intensity Light Source
    4.
    发明申请
    Method to Pattern Metallized Substrates Using a High Intensity Light Source 失效
    使用高强度光源对金属化基板进行图案化的方法

    公开(公告)号：US20090159565A1

    公开(公告)日：2009-06-25

    申请号：US11962164

    申请日：2007-12-21

    申请人： John B. Szczech ,  Daniel R. Gamota ,  Tomasz L. Klosowiak ,  Jerzy Wielgus

    发明人： John B. Szczech ,  Daniel R. Gamota ,  Tomasz L. Klosowiak ,  Jerzy Wielgus

    IPC分类号： B44C1/22

    CPC分类号： H05K3/027 ,  H05K1/0393 ,  H05K3/16 ,  H05K2201/0116 ,  H05K2201/0317 ,  H05K2201/10113 ,  H05K2203/0557 ,  H05K2203/056

    摘要： A method for delineating a metallization pattern in a layer of sputtered aluminum or sputtered copper using a broad spectrum high intensity light source. The metal is deposited on a polymeric substrate by sputtering, so that it has a porous nanostructure. An opaque mask that is a positive representation of the desired metallization pattern is then situated over the metallization layer, exposing those portions of the metallization layer intended to be removed. The masked metallization layer is then exposed to a rapid burst of high intensity visible light from an arc source sufficient to cause complete removal of the exposed portions of the metallization layer, exposing the underlying substrate and creating the delineated pattern.

    摘要翻译： 使用广谱高强度光源描绘溅射铝或溅射铜层中的金属化图案的方法。 通过溅射将金属沉积在聚合物基底上，使其具有多孔纳米结构。 然后将作为所需金属化图案的正表示的不透明掩模放置在金属化层上方，暴露预期要去除的金属化层的那些部分。 掩蔽的金属化层然后暴露于来自电弧源的高强度可见光的快速爆发，足以引起金属化层的暴露部分的完全去除，暴露下面的衬底并产生描绘图案。

    Inverter circuit having a feedback switch and methods corresponding thereto
    5.
    发明授权
    Inverter circuit having a feedback switch and methods corresponding thereto 失效
    具有反馈开关的逆变器电路及其对应的方法

    公开(公告)号：US07550998B2

    公开(公告)日：2009-06-23

    申请号：US11259480

    申请日：2005-10-26

    申请人： Paul W. Brazis ,  Daniel R. Gamota ,  Kin P. Tsui ,  John B. Szczech ,  Jie Zhang

    发明人： Paul W. Brazis ,  Daniel R. Gamota ,  Kin P. Tsui ,  John B. Szczech ,  Jie Zhang

    IPC分类号： H03K19/094 ,  H03K19/0175 ,  H03K19/20

    CPC分类号： H03K19/01721 ,  H03K19/09441

    摘要： An inverter circuit (500) having a drive transistor (102) that operably couples to a voltage bias input (101) (and where that drive transistor controls the inverter circuit output by opening and closing a connection between the output (105) and ground (104)) is further operably coupled to a feedback switch (401). In a preferred approach the feedback switch is itself also operably coupled to the voltage bias input and the output and preferably serves, when the drive transistor is switched “off,” to responsively couple the voltage bias input to the drive transistor in such a way as to cause a gate terminal of the drive transistor to have its polarity relative to a source terminal of the drive transistor reversed and hence permit the inverter circuit to operate across a substantially full potential operating range of the drive transistor.

    摘要翻译： 一种具有可操作地耦合到电压偏置输入（101）的驱动晶体管（102）的逆变器电路（500），并且其中该驱动晶体管通过打开和关闭输出（105）和地（ 104））进一步可操作地耦合到反馈开关（401）。 在优选的方法中，反馈开关本身也可操作地耦合到电压偏置输入端和输出端，并且优选地在驱动晶体管被切断时关断，以将电压偏置输入以驱动晶体管的方式耦合到驱动晶体管， 以使驱动晶体管的栅极端子相对于驱动晶体管的源极端子的极性相反，从而允许逆变器电路在驱动晶体管的基本上全部的电位工作范围内工作。

    Path determination facilitation method
    6.
    发明授权
    Path determination facilitation method 失效
    路径确定便利化方法

    公开(公告)号：US07461035B2

    公开(公告)日：2008-12-02

    申请号：US11259482

    申请日：2005-10-26

    申请人： Julius S. Gyorfi ,  Daniel R. Gamota ,  Swee M. Mok ,  John B. Szczech ,  Mansour Toloo ,  Jie Zhang

    发明人： Julius S. Gyorfi ,  Daniel R. Gamota ,  Swee M. Mok ,  John B. Szczech ,  Mansour Toloo ,  Jie Zhang

    IPC分类号： G06F15/18

    CPC分类号： G06N3/126

    摘要： One facilitates determination of a path that comprises a plurality of specific locations (201). In an optional though preferred embodiment these specific locations comprise locations where a given functional ink will preferably be printed using a continuous printing spray. Also in an optional though preferred embodiment this path will also avoid at least one predetermined area (701) where such a functional ink should not be printed. In a preferred approach this process (100) generally provides for identifying (101) these specific locations and further identifying (102), when applicable, the one or more predetermined areas to be avoided. This process then preferably uses a processor to effect at least one (and preferably both) of using (103) a genetic algorithm to identify a preferred path that includes the plurality of specific locations and using (104) an A* algorithm to process a candidate path to provide a selected path that includes the plurality of specific locations while also avoiding the at least one predetermined area.

    摘要翻译： 有利于确定包括多个特定位置（201）的路径。 在可选的但优选实施例中，这些特定位置包括优选使用连续印刷喷涂来印刷给定功能油墨的位置。 此外，在可选的但优选实施例中，该路径还将避免至少一个预定区域（701），其中不应打印这种功能性油墨。 在优选方法中，该过程（100）通常提供识别（101）这些特定位置，并且在适用时进一步识别（102）要避免的一个或多个预定区域。 该过程然后优选地使用处理器来实现至少一个（并且优选地两个）使用（103）遗传算法来识别包括多个特定位置的优选路径，并且使用（104）A *算法来处理候选 路径以提供包括多个特定位置的选定路径，同时还避免至少一个预定区域。

    Method to pattern metallized substrates using a high intensity light source
    7.
    发明授权
    Method to pattern metallized substrates using a high intensity light source 失效
    使用高强度光源对金属化基板进行图案化的方法

    公开(公告)号：US08318032B2

    公开(公告)日：2012-11-27

    申请号：US11962164

    申请日：2007-12-21

    申请人： John B. Szczech ,  Daniel R. Gamota ,  Tomasz L. Klosowiak ,  Jerzy Wielgus

    发明人： John B. Szczech ,  Daniel R. Gamota ,  Tomasz L. Klosowiak ,  Jerzy Wielgus

    IPC分类号： B44C1/22

    CPC分类号： H05K3/027 ,  H05K1/0393 ,  H05K3/16 ,  H05K2201/0116 ,  H05K2201/0317 ,  H05K2201/10113 ,  H05K2203/0557 ,  H05K2203/056

    摘要： A method for delineating a metallization pattern in a layer of sputtered aluminum or sputtered copper using a broad spectrum high intensity light source. The metal is deposited on a polymeric substrate by sputtering, so that it has a porous nanostructure. An opaque mask that is a positive representation of the desired metallization pattern is then situated over the metallization layer, exposing those portions of the metallization layer intended to be removed. The masked metallization layer is then exposed to a rapid burst of high intensity visible light from an arc source sufficient to cause complete removal of the exposed portions of the metallization layer, exposing the underlying substrate and creating the delineated pattern.

    摘要翻译： 使用广谱高强度光源描绘溅射铝或溅射铜层中的金属化图案的方法。 通过溅射将金属沉积在聚合物基底上，使其具有多孔纳米结构。 然后将作为所需金属化图案的正表示的不透明掩模放置在金属化层上方，暴露预期要去除的金属化层的那些部分。 掩蔽的金属化层然后暴露于来自电弧源的高强度可见光的快速爆发，足以引起金属化层的暴露部分的完全去除，暴露下面的衬底并产生描绘图案。

    Method and Apparatus for a Temperature Sensor for Measuring Peak Temperatures
    8.
    发明申请
    Method and Apparatus for a Temperature Sensor for Measuring Peak Temperatures 失效
    用于测量峰值温度的温度传感器的方法和装置

    公开(公告)号：US20090161727A1

    公开(公告)日：2009-06-25

    申请号：US11959774

    申请日：2007-12-19

    申请人： Jerzy Wielgus ,  Daniel R. Gamota ,  John B. Szczech ,  Kin P. Tsui ,  Jie Zhang

    发明人： Jerzy Wielgus ,  Daniel R. Gamota ,  John B. Szczech ,  Kin P. Tsui ,  Jie Zhang

    IPC分类号： G01K7/00 ,  H01C7/02

    CPC分类号： G01K3/04 ,  G01K7/16 ,  G01K2211/00 ,  H01C7/04 ,  H01C17/065 ,  Y10T29/49085

    摘要： A method and apparatus for an irreversible temperature sensor for measuring a peak exposure temperature. The apparatus is fabricated by printing an admixture of conductive nanoparticles on a dielectric substrate to form a film. The film has an electrical resistance that is inversely proportional to the exposure temperature. The electrical resistance also irreversibly decreases as the exposure temperature of the film increases. A portion of the film is exposed to a pulse of electromagnetic energy sufficient to render it substantially more electrically conductive than the portion that was not exposed. In use, the peak exposure temperature is determined by measuring the electrical resistance of the non-altered portion of the film and the electrical resistance of the portion that was exposed to the pulse of electromagnetic energy, and subtracting the electrical resistance of the altered portion from the electrical resistance of the portion that was not altered, to provide a difference value. The peak exposure temperature is then be calculated as a function of the difference value.

    摘要翻译： 用于测量峰值暴露温度的不可逆温度传感器的方法和装置。 该装置通过在介电基片上印刷导电纳米颗粒的混合物来形成膜。 该膜具有与曝光温度成反比的电阻。 随着膜的暴露温度升高，电阻也不可逆地减小。 膜的一部分暴露于足以使其基本上比未暴露的部分更具导电性的电磁能的脉冲。 在使用中，峰值曝光温度通过测量膜的未改变部分的电阻和暴露于电磁能脉冲的部分的电阻，以及减去改变部分的电阻来确定 未改变的部分的电阻，以提供差值。 然后根据差值计算峰值暴露温度。

    Method and Apparatus for Providing Electrically Isolated Closely Spaced Features on a Printed Circuit Board
    9.
    发明申请
    Method and Apparatus for Providing Electrically Isolated Closely Spaced Features on a Printed Circuit Board 失效
    在印刷电路板上提供电隔离密封特征的方法和装置

    公开(公告)号：US20090034215A1

    公开(公告)日：2009-02-05

    申请号：US11830348

    申请日：2007-07-30

    申请人： Jerzy Wieglus ,  Daniel R. Gamota ,  Tomasz L. Klosowiak ,  John B. Szczech ,  Kin P. Tsui

    发明人： Jerzy Wieglus ,  Daniel R. Gamota ,  Tomasz L. Klosowiak ,  John B. Szczech ,  Kin P. Tsui

    IPC分类号： H05K7/00 ,  H01R43/00

    CPC分类号： H05K3/04 ,  H01L21/4846 ,  H01L23/145 ,  H01L23/49838 ,  H01L23/49866 ,  H01L29/78603 ,  H01L2924/0002 ,  H05K1/0293 ,  H05K3/22 ,  H05K2201/068 ,  H05K2201/09727 ,  H05K2203/1105 ,  H05K2203/1476 ,  H05K2203/175 ,  Y10T29/49117 ,  H01L2924/00

    摘要： A method and apparatus for forming controlled stress fractures in metal produces electrically isolated, closely spaced circuit sub-entities for use on a metallized printed wiring board. A polymeric substrate has a layer of metal adhered to the surface, and the metal layer is formed into entities. Each entity has a fracture initiating feature formed into it, which serves to initiate and/or direct a stress crack that is induced in the metal. The entities are fractured in a controlled manner by subjecting the substrate and the entities to mechanical stress by a rapid thermal excursion, creating a stress fracture in the entity extending from the fracture initiating feature. The stress fracture divides each entity into two or more sub-entities that are electrically isolated from each other by the stress fracture. The resulting structure can be used to form circuitry requiring very fine spaces for high density printed circuit boards. The rapid thermal stress may be induced by a high intensity, strobed xenon arc lamp.

    摘要翻译： 用于在金属中形成受控应力断裂的方法和装置产生用于金属化印刷线路板的电隔离，紧密间隔的电路子实体。 聚合物基材具有粘附到表面的金属层，并且金属层形成为实体。 每个实体具有形成在其中的断裂起始特征，其用于引发和/或引导在金属中诱发的应力裂纹。 通过快速热偏移对衬底和实体进行机械应力，以受控的方式将实体断裂，在从断裂起始特征延伸的实体中产生应力断裂。 应力断裂将每个实体分为两个或多个通过应力断裂彼此电隔离的子实体。 所得到的结构可用于形成对于高密度印刷电路板需要非常精细空间的电路。 快速热应力可能由高强度，选通的氙弧灯引起。

    Method and apparatus for a temperature sensor for measuring peak temperatures
    10.
    发明授权
    Method and apparatus for a temperature sensor for measuring peak temperatures 失效
    用于测量峰值温度的温度传感器的方法和装置

    公开(公告)号：US07780345B2

    公开(公告)日：2010-08-24

    申请号：US11959774

    申请日：2007-12-19

    申请人： Jerzy Wielgus ,  Daniel R. Gamota ,  John B. Szczech ,  Kin P. Tsui ,  Jie Zhang

    发明人： Jerzy Wielgus ,  Daniel R. Gamota ,  John B. Szczech ,  Kin P. Tsui ,  Jie Zhang

    IPC分类号： G01K3/00 ,  G01K7/00 ,  H01C7/04 ,  H01C7/10 ,  H01C3/04

    CPC分类号： G01K3/04 ,  G01K7/16 ,  G01K2211/00 ,  H01C7/04 ,  H01C17/065 ,  Y10T29/49085

    摘要： A method and apparatus for an irreversible temperature sensor for measuring a peak exposure temperature. The apparatus is fabricated by printing an admixture of conductive nanoparticles on a dielectric substrate to form a film. The film has an electrical resistance that is inversely proportional to the exposure temperature. The electrical resistance also irreversibly decreases as the exposure temperature of the film increases. A portion of the film is exposed to a pulse of electromagnetic energy sufficient to render it substantially more electrically conductive than the portion that was not exposed. In use, the peak exposure temperature is determined by measuring the electrical resistance of the non-altered portion of the film and the electrical resistance of the portion that was exposed to the pulse of electromagnetic energy, and subtracting the electrical resistance of the altered portion from the electrical resistance of the portion that was not altered, to provide a difference value. The peak exposure temperature is then be calculated as a function of the difference value.

    摘要翻译： 用于测量峰值暴露温度的不可逆温度传感器的方法和装置。 该装置通过在介电基片上印刷导电纳米颗粒的混合物来形成膜。 该膜具有与曝光温度成反比的电阻。 随着膜的暴露温度升高，电阻也不可逆地减小。 膜的一部分暴露于足以使其基本上比未暴露的部分更具导电性的电磁能的脉冲。 在使用中，峰值曝光温度通过测量膜的未改变部分的电阻和暴露于电磁能脉冲的部分的电阻，以及减去改变部分的电阻来确定 未改变的部分的电阻，以提供差值。 然后根据差值计算峰值暴露温度。