公开(公告)号：US09224582B2

公开(公告)日：2015-12-29

申请号：US11947459

申请日：2007-11-29

申请人： John Forster ,  Anantha Subramani ,  Wei D. Wang

发明人： John Forster ,  Anantha Subramani ,  Wei D. Wang

IPC分类号： C23C14/34 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01J37/32477 ,  C23C14/34 ,  H01J37/32495 ,  H01L21/02043 ,  H01L21/67005

摘要： A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

摘要翻译： 描述了一种用于减少等离子体处理室中的颗粒污染的方法和装置。 在一个实施例中，提供了一种粘贴盘，其包括高电阻率材料的盘形基底，其具有施加到基部的顶表面的导电粘贴材料层，使得粘贴材料层部分地覆盖基底的顶表面 基础。 溅射蚀刻粘贴盘以在等离子体处理室的内表面上的广泛区域上沉积导电粘贴材料，同时最小化用于在衬底处理期间优化溅射蚀刻工艺的介电部件上的沉积。

公开(公告)号：US20090142512A1

公开(公告)日：2009-06-04

申请号：US11947459

申请日：2007-11-29

申请人： John FORSTER ,  Anantha Subramani ,  Wei D. Wang

发明人： John FORSTER ,  Anantha Subramani ,  Wei D. Wang

IPC分类号： H05H1/24 ,  B05B5/00

CPC分类号： H01J37/32477 ,  C23C14/34 ,  H01J37/32495 ,  H01L21/02043 ,  H01L21/67005

摘要： A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.

摘要翻译： 描述了一种用于减少等离子体处理室中的颗粒污染的方法和装置。 在一个实施例中，提供了一种粘贴盘，其包括高电阻率材料的盘形基底，其具有施加到基部的顶表面的导电粘贴材料层，使得粘贴材料层部分地覆盖基底的顶表面 基础。 溅射蚀刻粘贴盘以在等离子体处理室的内表面上的广泛区域上沉积导电粘贴材料，同时最小化用于在衬底处理期间优化溅射蚀刻工艺的介电部件上的沉积。

公开(公告)号：US20080190760A1

公开(公告)日：2008-08-14

申请号：US11838796

申请日：2007-08-14

申请人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

发明人： XIANMIN TANG ,  Arvind Sundarrajan ,  Daniel Lubben ,  Qian Luo ,  Tza-Jing Gung ,  Anantha Subramani ,  Hua Chung ,  Xinyu Fu ,  Rongjun Wang ,  Yong Cao ,  Jick Yu ,  John Forster ,  Praburam Gopalraja

IPC分类号： C23C14/32

CPC分类号： C23C14/165 ,  C23C14/046 ,  C23C14/358 ,  C23C14/5826 ,  C23C14/584 ,  H01J37/3408 ,  H01J37/3455 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76877

摘要： An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.

摘要翻译： 一种集成的铜沉积工艺，特别适用于在铜的电化学电镀之前在窄通孔中形成铜籽晶层，包括至少一个铜的溅射沉积循环，然后溅射蚀刻沉积的铜，优选在相同的溅射 房间。 沉积在促进高铜离子化分数和强晶片偏置的条件下进行以将铜离子吸入通孔。 蚀刻可以用氩离子进行，优选地通过围绕室的RF线圈进行感应激励，或者通过可以用高目标功率和强磁控管形成的铜离子或通过使用RF线圈进行。 可以执行两个或更多个沉积/蚀刻循环。 最终的闪蒸沉积可以用高铜离子化和低晶片偏压进行。

公开(公告)号：US20160035937A1

公开(公告)日：2016-02-04

申请号：US14884251

申请日：2015-10-15

申请人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01L31/18

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。

公开(公告)号：US20150162171A9

公开(公告)日：2015-06-11

申请号：US13524859

申请日：2012-06-15

申请人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

发明人： Martin Lee Riker ,  Keith A. Miller ,  Anantha Subramani

IPC分类号： H01J37/32 ,  C23C14/34

CPC分类号： C23C14/564 ,  H01J37/32651 ,  H01J37/3405 ,  H01J37/3441

摘要： Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

公开(公告)号：US20140264363A1

公开(公告)日：2014-09-18

申请号：US13947857

申请日：2013-07-22

申请人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/00 ,  H01L31/18 ,  H01J37/34 ,  H01L29/20

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。

公开(公告)号：US20070051622A1

公开(公告)日：2007-03-08

申请号：US11218403

申请日：2005-09-02

申请人： Xianmin Tang ,  Anantha Subramani ,  Praburam Gopalraja ,  Jianming Fu ,  Jick Yu

发明人： Xianmin Tang ,  Anantha Subramani ,  Praburam Gopalraja ,  Jianming Fu ,  Jick Yu

IPC分类号： C23C14/00

CPC分类号： C23C14/35 ,  C23C14/3442 ,  C23C14/345 ,  H01J37/3056 ,  H01J37/3408

摘要： A magnetron sputter reactor including an ion beam source producing a linear beam that strikes the wafer center at an angle of less than 35°. The linear beam extends across the wafer perpendicular to the beam but has a much short dimension along the beam propagation axis while the wafer is being rotated. The ion source may be an anode layer source having a plasma loop between an inner magnetic pole and a surrounding outer magnetic pole with anode overlying the loop with a closed-loop aperture. The beams from the opposed sides of the loop are steered together by making the outer pole stronger than the inner pole. The aperture width may be varied to control the emission intensity.

摘要翻译： 包括离子束源的磁控溅射反应器，产生以小于35°的角度撞击晶片中心的线性光束。 线性光束垂直于光束延伸穿过晶片，但是当晶片正在旋转时沿着光束传播轴线具有很短的尺寸。 离子源可以是在内部磁极和周围的外部磁极之间具有等离子体环的阳极层源，阳极覆盖具有闭环孔径的环路。 通过使外极比内极更强，从环的相对侧的梁被转向一起。 可以改变孔径宽度以控制发射强度。

公开(公告)号：US20050211548A1

公开(公告)日：2005-09-29

申请号：US10949735

申请日：2004-09-23

申请人： Tza-Jing Gung ,  Hong Yang ,  Anantha Subramani ,  Maurice Ewert ,  Keith Miller ,  Vincent Burkhart

发明人： Tza-Jing Gung ,  Hong Yang ,  Anantha Subramani ,  Maurice Ewert ,  Keith Miller ,  Vincent Burkhart

IPC分类号： C23C14/35 ,  H01J37/34

CPC分类号： H01J37/3455 ,  C23C14/35 ,  H01J37/3408

摘要： A dual-position magnetron that is rotated about a central axis in back of a sputtering target, particularly for sputtering an edge of a target of a barrier material onto a wafer and cleaning material redeposited at a center of the target. During target cleaning, wafer bias is reduced. In one embodiment, an arc-shaped magnetron is supported on a pivot arm pivoting on the end of a bracket fixed to the rotary shaft. A spring biases the pivot arm such that the magnetron is urged towards and overlies the target center. Centrifugal force at increased rotation rate overcomes the spring bias and shift the magnetron to an outer position with the long magnetron dimension aligned with the target edge. Mechanical stops prevent excessive movement in either direction. Other mechanisms include linear slides and actuators.

摘要翻译： 一种双位磁控管，其围绕溅射靶的背面的中心轴旋转，特别是用于将阻挡材料的靶的边缘溅射到晶片上，并且清理物质再沉积在靶的中心。 在目标清洁期间，晶片偏置减小。 在一个实施例中，弧形磁控管被支撑在枢转臂上，枢转臂在固定到旋转轴的支架的端部上枢转。 弹簧偏压枢转臂，使得磁控管被推向目标中心并覆盖在目标中心上方。 提高旋转速度的离心力克服了弹簧偏压，并将磁控管移动到外部位置，长磁导管尺寸与目标边缘对齐。 机械停止可防止任何方向上的过度运动。 其他机构包括线性滑块和致动器。

公开(公告)号：US06723214B2

公开(公告)日：2004-04-20

申请号：US10039907

申请日：2002-01-02

申请人： Bradley O. Stimson ,  Mitsuhiro Kaburaki ,  John C. Forster ,  Eric Delaurentis ,  Praburam Gopalraja ,  Patricia Rodriguez ,  Anantha Subramani

发明人： Bradley O. Stimson ,  Mitsuhiro Kaburaki ,  John C. Forster ,  Eric Delaurentis ,  Praburam Gopalraja ,  Patricia Rodriguez ,  Anantha Subramani

IPC分类号： C23C1400

CPC分类号： H01J37/32431

摘要： Apparatus for supporting a substrate such as a semiconductor wafer in a process chamber to improve power coupling through the substrate. The apparatus contains a pedestal assembly and a pedestal cover positioned over the top surface of and circumscribing the pedestal assembly for electrically isolating the pedestal assembly. The pedestal cover reduces conductive film growth in the wafer process region. As such, RF wafer biasing power from the pedestal assembly remains coupled through the substrate during processing.

摘要翻译： 用于在处理室中支撑诸如半导体晶片的衬底的装置，以改善通过衬底的功率耦合。 该装置包括一个基座组件和一个位于盖子顶部表面上并围绕基座组件的基座盖，用于电绝缘基座组件。 基座盖减少晶片工艺区域中的导电膜生长。 因此，来自基座组件的RF晶片偏置功率在处理期间保持通过衬底耦合。

公开(公告)号：US09396933B2

公开(公告)日：2016-07-19

申请号：US13868385

申请日：2013-04-23

申请人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

发明人： Mingwei Zhu ,  Rongjun Wang ,  Nag B. Patibandia ,  Xianmin Tang ,  Vivek Agrawal ,  Cheng-Hsiung Tsai ,  Muhammad Rasheed ,  Dinesh Saigal ,  Praburam Gopal Raja ,  Omkaram Nalamasu ,  Anantha Subramani

IPC分类号： H01L21/02 ,  H01L29/205 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L33/12

CPC分类号： H01L33/12 ,  C30B23/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/205 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32

摘要： Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma.

摘要翻译： 描述了具有物理气相沉积（PVD）形成的氮化铝缓冲层的氮化镓基光器件的制造。 还描述了PVD AlN缓冲层的工艺条件。 还描述了PVD氮化铝缓冲层的基板预处理。 在一个实例中，在衬底上制造缓冲层的方法包括预处理衬底的表面。 该方法还涉及从容纳在具有氮基气体或等离子体的物理气相沉积（PVD）室中的含铝靶反应溅射基板表面上的氮化铝（AlN）层。