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    Mechanical enhancer additives for low dielectric films
    1.
    发明授权
    Mechanical enhancer additives for low dielectric films 有权
    用于低介电膜的机械增强剂添加剂

    公开(公告)号：US08137764B2

    公开(公告)日：2012-03-20

    申请号：US10842503

    申请日：2004-05-11

    申请人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    发明人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Raymond Nicholas Vrtis ,  Aaron Scott Lukas ,  Brian Keith Peterson ,  Mark Daniel Bitner

    IPC分类号： C23C10/06 ,  C23C16/24

    CPC分类号： C03C11/00 ,  C03C3/045 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/31695 ,  Y10T428/31663

    摘要： A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

    摘要翻译： 本文公开了一种通过调节混合物内的有机基团如甲基的量来制备具有增强的机械性能的低介电常数有机硅酸盐（OSG）的化学气相沉积方法。 在本发明的一个实施方案中，OSG膜由包含第一含硅前体的混合物沉积，该第一含硅前体包含每Si原子3至4个Si-O键，0至1个选自Si -H，Si-Br和Si-Cl键，并且不具有Si-C键，并且每个Si原子包含至少一个Si-C键的第二含硅前体。 在本发明的另一个实施方案中，OSG膜由包含不对称含硅前体的混合物沉积。 在任一实施方案中，混合物还可含有孔原体前体以提供多孔OSG膜。

    Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
    10.
    发明授权
    Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权
    孔原子，孔隙前体和使用它们的方法提供具有低介电常数的多孔有机硅玻璃膜

    公开(公告)号：US08293001B2

    公开(公告)日：2012-10-23

    申请号：US13031387

    申请日：2011-02-21

    申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

    发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

    IPC分类号： C09D7/12

    CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274

    摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens) wherein the precursor is a compound of the formula R1n(OR2)p(O(O)CR4)3−n−pSi—R7—SiR3m(O(O)CR5)q(OR6)3−m−q where R1 and R3 are independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2, R8 and R7 are independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, R4 and Rs are independently H, C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, n is 0 to 3, m is 0 to 3, q is 0 to 3 and p is 0 to 3, provided that n+m>1, n+p 3, and m+q 3, wherein the porogen is selected from the group consisting of norbornadiene, alpha-terpinene, limonene, cyclooctane, and cymene. The porogens are subsequently removed to provide the porous film.

    摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜由化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其中前体是式R1n（OR2）p（O（O） ）CR 4）3-n-pSi-R 7 -SiR 3 m（O（O）CR 5）q（OR 6）3-m-q其中R 1和R 3独立地为H或C 1至C 4直链或支链，饱和，单或多不饱和， 环状，部分或完全氟化的烃; R2，R8和R7独立为C1至C6直链或支链，饱和，单或多不饱和，环状，芳族，部分或全部是氟化的烃，R4和R5独立地为H，C1至C6直链或支链，饱和，单或多 不饱和的，环状的，芳族的，部分或完全氟化的烃，n为0至3，m为0至3，q为0至3，p为0至3，条件是n + m> 1，n + p 3和 m + q 3，其中致孔剂选自降冰片二烯，α-萜品烯，柠檬烯，环辛烷和伞花烃。 随后除去致孔剂以提供多孔膜。