公开(公告)号：US5612255A

公开(公告)日：1997-03-18

申请号：US466315

申请日：1995-06-06

申请人： Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

发明人： Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

IPC分类号： H01L21/335 ,  H01L29/12 ,  H01L29/423 ,  H01L31/0352 ,  H01L31/11 ,  H01L21/265 ,  H01L21/44 ,  H01L21/48

CPC分类号： H01L31/1105 ,  B82Y10/00 ,  H01L29/66439 ,  H01L31/0352 ,  H01L29/0665 ,  H01L29/66795 ,  H01L29/785 ,  Y10S438/962

摘要： A silicon quantum wire transistor. A silicon substrate is sub-etched leaving a thin ridge (.ltoreq.500 .ANG. tall by .ltoreq.500 .ANG. wide) of silicon a quantum wire, on the substrate surface. An FET may be formed from the quantum wire by depositing or growing gate oxide and depositing gate poly. After defining a gate, the source and drain are defined. Alternatively, an optically activated transistor is formed by defining an emitter and collector and providing a path for illumination to the wire.

摘要翻译： 硅量子线晶体管。 在衬底表面上，对硅衬底进行次蚀刻，留下一个硅量子线的薄脊（

公开(公告)号：US5293050A

公开(公告)日：1994-03-08

申请号：US37154

申请日：1993-03-25

申请人： Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

发明人： Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

IPC分类号： H01L21/20 ,  G02B6/42 ,  H01L29/06 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/12 ,  H01L33/06 ,  H01L33/34

CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/42 ,  H01L31/0352 ,  H01L31/105 ,  H01L33/34 ,  Y10S148/099 ,  Y10S438/962

摘要： A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.

摘要翻译： 半导体发光/​​检测装置具有第一掺杂硅层，形成在第一掺杂硅层上的本征硅外延层，嵌入本征硅外延层内的至少一个量子点，以及形成在第二掺杂硅层上的第二掺杂硅层 本征硅外延层。

公开(公告)号：US5354707A

公开(公告)日：1994-10-11

申请号：US149394

申请日：1993-11-09

申请人： Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

发明人： Jonathan D. Chapple-Sokol ,  Seshadri Subbanna ,  Manu J. Tejwani

IPC分类号： H01L21/20 ,  G02B6/42 ,  H01L29/06 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/12 ,  H01L33/06 ,  H01L33/34 ,  H01L21/203 ,  H01L31/18

CPC分类号： H01L33/06 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/42 ,  H01L31/0352 ,  H01L31/105 ,  H01L33/34 ,  Y10S148/099 ,  Y10S438/962

摘要： A semiconductor light emitting/detecting device has a first doped silicon layer, an intrinsic silicon epitaxial layer formed on the first doped silicon layer, at least one quantum dot embedded within the intrinsic silicon epitaxial layer, and a second doped silicon layer formed on the second intrinsic silicon epitaxial layer.

摘要翻译： 半导体发光/​​检测装置具有第一掺杂硅层，形成在第一掺杂硅层上的本征硅外延层，嵌入本征硅外延层内的至少一个量子点，以及形成在第二掺杂硅层上的第二掺杂硅层 本征硅外延层。

公开(公告)号：US07572650B2

公开(公告)日：2009-08-11

申请号：US11550853

申请日：2006-10-19

申请人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

发明人： Jonathan D. Chapple-Sokol ,  Terence B. Hook ,  Baozhen Li ,  Thomas L. McDevitt ,  Christopher A. Ponsolle ,  Bette B. Reuter ,  Timothy D. Sullivan ,  Jeffrey S. Zimmerman

IPC分类号： H01L21/00

CPC分类号： H01L21/7684 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for suppressing localized metal precipitate formation (LMPF) in semiconductor processing. For each metal wire that is exposed to the manufacturing environment and is electrically coupled to an N region, at least one P+ region is formed electrically coupled to the same metal wire. As a result, few excess electrons are available to combine with metal ions to form localized metal precipitate at the metal wire. A monitoring ramp terminal can be formed around and electrically disconnected from the metal wire. By applying a voltage difference to the metal wire and the monitoring ramp terminal and measuring the resulting current flowing through the metal wire and the monitoring ramp terminal, it can be determined whether localized metal precipitate is formed at the metal wire.

摘要翻译： 用于抑制半导体加工中的局部金属沉淀形成（LMPF）的方法和结构。 对于暴露于制造环境并且电耦合到N区域的每个金属线，至少一个P +区形成为电耦合到相同的金属线。 结果，几乎没有多余的电子可用于与金属离子结合以在金属线上形成局部金属沉淀。 可以在金属线周围形成监测斜坡端子并与金属线电断开。 通过向金属线和监视斜坡端子施加电压差并测量流过金属线和监视斜坡端子的所得电流，可以确定在金属线处是否形成了局部金属沉淀物。

公开(公告)号：US07235487B2

公开(公告)日：2007-06-26

申请号：US10709562

申请日：2004-05-13

申请人： Steven P Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

发明人： Steven P Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873

摘要： A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

摘要翻译： 一种用于在半导体结构的制造过程中减少铜籽晶层的腐蚀的方法和结构。 在结构（或包含结构的晶片）离开溅射工具的真空环境之前，将结构加热到高于溅射工具外部环境的水冷凝温度的温度。 结果，当结构离开溅射工具时，水蒸气不会在结构上冷凝，因此防止了水蒸气对种子层的腐蚀。 或者，在结构离开溅射工具环境之前，可以在籽晶层的顶部形成耐水蒸汽的保护层。 在另一替代实施例中，种子层可以包括铜合金（例如用铝），其在暴露于水蒸汽时生长出耐水蒸气的保护层。

公开(公告)号：US5492718A

公开(公告)日：1996-02-20

申请号：US349230

申请日：1994-12-05

申请人： James A. O'Neill ,  Michael L. Passow ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jyothi Singh

发明人： James A. O'Neill ,  Michael L. Passow ,  Tina J. Cotler ,  Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  Jyothi Singh

IPC分类号： G01N21/33 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  C23F4/00 ,  G01N21/35 ,  H01L21/205 ,  H01L21/302 ,  H01L21/31 ,  H01L31/00 ,  B05D3/06 ,  C23C8/00

CPC分类号： G01N21/3504 ,  C23C16/52

摘要： An apparatus for processing a layer on a workpiece includes a source of reactant fluid, a reaction chamber having a support for the workpiece and a fluid delivery apparatus for feeding an input fluid into the reaction chamber with the input fluid being utilized to process the material. An infrared sensor is adapted to cooperate with the fluid delivery apparatus for sensing the concentration of a component of the input fluid. The infrared sensor includes an infrared light source positioned to direct a beam of infrared light at an infrared light detector through the input fluid. The infrared light detector produces an electrical output signal indicative of the amount of light received by the detector and therefore not absorbed by the input fluid.

摘要翻译： 用于处理工件上的层的设备包括反应物流体源，具有用于工件的支撑的反应室和用于将输入流体输送到反应室中的流体输送装置，其中输入流体用于处理材料。 红外传感器适于与流体输送装置配合，用于感测输入流体的组分的浓度。 红外传感器包括红外光源，其被定位成通过输入流体引导红外光检测器处的​​红外光束。 红外光检测器产生指示由检测器接收的光量的电输出信号，因此不被输入流体吸收。

公开(公告)号：US20090230555A1

公开(公告)日：2009-09-17

申请号：US12049698

申请日：2008-03-17

申请人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

发明人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L23/53223 ,  H01L23/5329 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： An underlying interconnect level containing underlying W vias embedded in a dielectric material layer are formed on a semiconductor substrate. A metallic layer stack comprising, from bottom to top, a low-oxygen-reactivity metal layer, a bottom transition metal layer, a bottom transition metal nitride layer, an aluminum-copper layer, an optional top transition metal layer, and a top transition metal nitride layer. The metallic layer stack is lithographically patterned to form at least one aluminum-based metal line, which constitutes a metal interconnect structure. The low-oxygen-reactivity metal layer enhances electromigration resistance of the at least one aluminum-based metal line since formation of compound between the bottom transition metal layer and the dielectric material layer is prevented by the low-oxygen-reactivity metal layer, which does not interact with the dielectric material layer.

摘要翻译： 在半导体衬底上形成包含埋在电介质材料层中的底层W通孔的底层互连层。 一种金属层堆叠，包括从底部到顶部的低氧反应性金属层，底部过渡金属层，底部过渡金属氮化物层，铝 - 铜层，任选的顶部过渡金属层和顶部过渡层 金属氮化物层。 金属层堆叠被光刻图案化以形成至少一个构成金属互连结构的铝基金属线。 低氧反应性金属层由于通过低氧反应性金属层防止了底部过渡金属层和电介质材料层之间的化合物的形成，因此提高了至少一种铝基金属线的电迁移率 不与介电材料层相互作用。

公开(公告)号：US5431734A

公开(公告)日：1995-07-11

申请号：US234900

申请日：1994-04-28

申请人： Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong

发明人： Jonathan D. Chapple-Sokol ,  Richard A. Conti ,  James A. O'Neill ,  Narayana V. Sarma ,  Donald L. Wilson ,  Justin W.-C. Wong

IPC分类号： H01L21/205 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  B05C11/00

CPC分类号： C23C16/52 ,  C23C16/403 ,  C23C16/4402 ,  C23C16/4485 ,  Y10S438/935

摘要： A method and apparatus for monitoring and controlling reactant vapors prior to chemical vapor deposition (CVD). The reactant vapors are monitored at full concentration without sampling as they are transported to a CVD reactor. Contaminants detected cause a process controller to switch the transport path to direct reactant vapors to a system pump.

摘要翻译： 一种用于在化学气相沉积（CVD）之前监测和控制反应物蒸气的方法和装置。 当反应物蒸气被输送到CVD反应器时，反应物蒸气以全浓度监测，不进行取样。 检测到的污染物导致过程控制器将输送路径切换为直接反应物蒸汽到系统泵。

公开(公告)号：US08003536B2

公开(公告)日：2011-08-23

申请号：US12552641

申请日：2009-09-02

申请人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

发明人： Jonathan D. Chapple-Sokol ,  Daniel A. Delibac ,  Zhong-Xiang He ,  Tom C. Lee ,  William J. Murphy ,  Timothy D. Sullivan ,  David C. Thomas ,  Daniel S. Vanslette

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76834 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/7685 ,  H01L21/76858 ,  H01L2221/1078

摘要： A vertical metallic stack, from bottom to top, of an elemental metal liner, a metal nitride liner, a Ti liner, an aluminum portion, and a metal nitride cap, is formed on an underlying metal interconnect structure. The vertical metallic stack is annealed at an elevated temperature to induce formation of a TiAl3 liner by reaction of the Ti liner with the material of the aluminum portion. The material of the TiAl3 liner is resistant to electromigration, thereby providing enhanced electromigration resistance to the vertical metallic stack comprising the elemental metal liner, the metal nitride liner, the TiAl3 liner, the aluminum portion, and the metal nitride cap. The effect of enhanced electromigration resistance may be more prominent in areas in which the metal nitride cap suffers from erosion during processing.

公开(公告)号：US07879716B2

公开(公告)日：2011-02-01

申请号：US11687017

申请日：2007-03-16

申请人： Steven P. Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

发明人： Steven P. Barkyoumb ,  Jonathan D. Chapple-Sokol ,  Edward C. Cooney, III ,  Keith E. Downes ,  Thomas L. McDevitt ,  William J. Murphy

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76871 ,  H01L21/76873

摘要： A method and structure for reducing the corrosion of the copper seed layer during the fabrication process of a semiconductor structure. Before the structure (or the wafer containing the structure) exits the vacuum environment of the sputter tool, the structure is warmed up to a temperature above the water condensation temperature of the environment outside the sputter tool. As a result, water vapor would not condense on the structure when the structure exits the sputter tool, and therefore, corrosion of the seed layer by the water vapor is prevented. Alternatively, a protective layer resistant to water vapor can be formed on top of the seed layer before the structure exits the sputter tool environment. In yet another alternative embodiment, the seed layer can comprises a copper alloy (such as with aluminum) which grows a protective layer resistant to water vapor upon exposure to water vapor.

摘要翻译： 一种用于在半导体结构的制造过程中减少铜籽晶层的腐蚀的方法和结构。 在结构（或包含结构的晶片）离开溅射工具的真空环境之前，将结构加热到高于溅射工具外部环境的水冷凝温度的温度。 结果，当结构离开溅射工具时，水蒸气不会在结构上冷凝，因此防止了水蒸气对种子层的腐蚀。 或者，在结构离开溅射工具环境之前，可以在籽晶层的顶部形成耐水蒸汽的保护层。 在另一替代实施例中，种子层可以包括铜合金（例如用铝），其在暴露于水蒸汽时生长出耐水蒸气的保护层。