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公开(公告)号：US07279718B2
公开(公告)日：2007-10-09
申请号：US10059588
申请日：2002-01-28
IPC分类号： H01L33/00 , H01L33/001 , H01L33/054 , H01L33/077
CPC分类号： H01L33/20 , H01L33/08 , H01L2224/48091 , H01L2933/0083 , Y10S438/943 , H01L2924/00014
摘要： A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.
摘要翻译： 提供了一种光子晶体发光二极管（“PXLED”）。 PXLED包括在LED的半导体层中形成的诸如孔格的周期性结构。 周期性结构的参数使得由PXLED发射的光子的能量靠近周期性结构的带结构的带边。 金属电极层对PXLED的效率有很大的影响。 此外，由GaN形成的PXLED具有低表面复合速度，因此具有高效率。 PXLED由新颖的制造技术形成，例如在图案化掩模层上的外延横向过度生长技术，产生具有低缺陷密度的半导体层。 将PXLED反转以露出掩模层的图案或使用Talbot效应创建对准的第二图案化掩模层允许形成具有低缺陷密度的PXLED。
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公开(公告)号：US07642108B2
公开(公告)日：2010-01-05
申请号：US11868854
申请日：2007-10-08
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/08 , H01L2224/48091 , H01L2933/0083 , Y10S438/943 , H01L2924/00014
摘要： A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.
摘要翻译： 提供了一种光子晶体发光二极管（“PXLED”）。 PXLED包括在LED的半导体层中形成的诸如孔格的周期性结构。 周期性结构的参数使得由PXLED发射的光子的能量靠近周期性结构的带结构的带边。 金属电极层对PXLED的效率有很大的影响。 此外，由GaN形成的PXLED具有低表面复合速度，因此具有高效率。 PXLED由新颖的制造技术形成，例如在图案化掩模层上的外延横向过度生长技术，产生具有低缺陷密度的半导体层。 将PXLED反转以露出掩模层的图案或使用Talbot效应创建对准的第二图案化掩模层允许形成具有低缺陷密度的PXLED。
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公开(公告)号：US07294862B2
公开(公告)日：2007-11-13
申请号：US11373639
申请日：2006-03-09
IPC分类号： H01L29/22
CPC分类号： H01L33/20 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L2933/0083
摘要： A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
摘要翻译： 在III族氮化物发光器件的n型层中形成光子晶体结构。 在一些实施例中，在隧道结上形成光子晶体n型层。 该器件包括第一导电类型的第一层，第二导电类型的第一层和将第一导电类型的第一层与第一导电类型的第一层分开的有源区。 隧道结包括第一导电类型的第二层和第二导电类型的第二层，并且将第一导电类型的第一层与第一导电类型的第三层分离。 在第一导电类型的第三层中形成光子晶体结构。
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4.发明授权Light emitting device including arrayed emitters defined by a photonic crystal 有权发光器件包括由光子晶体限定的阵列发光体公开(公告)号：US07697584B2
公开(公告)日：2010-04-13
申请号：US11537940
申请日：2006-10-02
IPC分类号： H01S5/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/145 , H01L33/405 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A light emitting device includes a structure with a light emitting region disposed between an n-type region and a p-type region. A plurality of holes in the structure, which form a photonic crystal, are formed in a first region of the structure corresponding to a first portion of the light emitting region. A second region of the structure corresponding to a second portion of the light emitting region is free of holes. The device is configured such that when forward biased, current is injected in the second region and the first region is substantially free of current.
摘要翻译： 发光器件包括具有设置在n型区域和p型区域之间的发光区域的结构。 形成光子晶体的结构中的多个孔形成在与发光区域的第一部分对应的结构的第一区域中。 与发光区域的第二部分对应的结构的第二区域没有孔。 该器件被配置为使得当正向偏置时，电流注入第二区域，而第一区域基本上没有电流。
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公开(公告)号：US07442964B2
公开(公告)日：2008-10-28
申请号：US10911468
申请日：2004-08-04
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , B82Y20/00 , G02B6/1225 , H01L2933/0083
摘要： A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first region of the semiconductor layers and a second lattice formed on a second region of the semiconductor layers. The parameters of the first lattice may be selected to maximize the total radiated power from the device. The parameters of the second lattice may be selected to maximize the light extraction into a 30° cone on a surface of the stack.
摘要翻译： 半导体发光器件包括作为半导体层中的空穴的格子的光子晶体结构。 光子晶体结构包括多个晶格。 在一些实施例中，器件包括形成在半导体层的第一区域上的第一晶格和形成在半导体层的第二区域上的第二晶格。 可以选择第一晶格的参数以最大化来自装置的总辐射功率。 可以选择第二晶格的参数以最大化在层叠表面上的30°锥的光提取。
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公开(公告)号：US07442965B2
公开(公告)日：2008-10-28
申请号：US11373636
申请日：2006-03-09
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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公开(公告)号：US07804100B2
公开(公告)日：2010-09-28
申请号：US11080022
申请日：2005-03-14
IPC分类号： H01L27/15
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译： 器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。 键合界面设置在两个表面之间，其中一个表面是器件结构的表面。 结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。
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公开(公告)号：US07675084B2
公开(公告)日：2010-03-09
申请号：US12259120
申请日：2008-10-27
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an n-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的n型区域中形成光子晶体，并且有助于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。
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9.发明授权Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 有权通过生长衬底去除制造的谐振腔III族氮化物发光器件公开(公告)号：US06956246B1
公开(公告)日：2005-10-18
申请号：US10861745
申请日：2004-06-03
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.
摘要翻译： 半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。 空腔的顶表面和底表面都可以具有粗糙的表面。 例如，表面可以具有由多个谷分隔的多个峰。 在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。
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10.发明授权III-Nitride Light-emitting device with increased light generating capability 有权III型氮化物具有增加的发光能力的发光装置公开(公告)号：US06521914B2
公开(公告)日：2003-02-18
申请号：US10112175
申请日：2002-03-29
申请人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
发明人： Michael R Krames , Daniel A. Steigerwald , Fred A. Kish, Jr. , Pradeep Rajkomar , Jonathan J. Wierer, Jr. , Tun S Tan
IPC分类号： H01L29267
CPC分类号： H01L33/62 , G09G2360/148 , H01L25/167 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/641 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05572 , H01L2224/14 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.
摘要翻译： 本发明是具有增强的总发光能力的反向III族氮化物发光器件（LED）。 大面积器件具有插入p电极金属化以提供低串联电阻的n电极。 p电极金属化是不透明的，高反射性的，并且提供优异的电流扩散。 LED有源区的峰值发射波长处的p电极每次吸收小于入射光的25％。 可以使用底座来提供LED管芯和封装之间的电连接和热连接。 底座材料可以是Si以提供诸如电压一致性限制操作的电子功能。 整个设备，包括LED-submount接口，设计用于低热阻，以实现高电流密度操作。 最后，器件可以包括高折射率（n> 1.8）的覆盖层。
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