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    Methods of forming stacked semiconductor devices with single-crystal semiconductor regions
    1.
    发明授权
    Methods of forming stacked semiconductor devices with single-crystal semiconductor regions 有权
    用单晶半导体区形成叠层半导体器件的方法

    公开(公告)号：US07932163B2

    公开(公告)日：2011-04-26

    申请号：US12029572

    申请日：2008-02-12

    申请人： Jong-Heun Lim ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Dae-Lok Bae ,  Seong-Kyu Yun ,  Suk-Hun Choi

    发明人： Jong-Heun Lim ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Dae-Lok Bae ,  Seong-Kyu Yun ,  Suk-Hun Choi

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： H01L27/0688 ,  H01L21/2007 ,  H01L21/8221

    摘要： Spaced apart bonding surfaces are formed on a first substrate. A second substrate is bonded to the bonding surfaces of the first substrate and cleaved to leave respective semiconductor regions from the second substrate on respective ones of the spaced apart bonding surfaces of the first substrate. The bonding surfaces may include surfaces of at least one insulating region on the first substrate, and at least one active device may be formed in and/or on at least one of the semiconductor regions. A device isolation region may be formed adjacent the at least one of the semiconductor regions.

    摘要翻译： 间隔开的接合表面形成在第一基底上。 第二衬底被结合到第一衬底的接合表面并且被切割以在第一衬底的相应的间隔的结合表面上的第二衬底上留下相应的半导体区域。 接合表面可以包括第一衬底上的至少一个绝缘区域的表面，并且至少一个有源器件可以形成在半导体区域中的至少一个中和/或至少一个半导体区域中。 器件隔离区域可以形成为与半导体区域中的至少一个相邻。

    Methods of Forming Stacked Semiconductor Devices with Single-Crystal Semiconductor Regions
    2.
    发明申请
    Methods of Forming Stacked Semiconductor Devices with Single-Crystal Semiconductor Regions 有权
    用单晶半导体区形成叠层半导体器件的方法

    公开(公告)号：US20080200009A1

    公开(公告)日：2008-08-21

    申请号：US12029572

    申请日：2008-02-12

    申请人： Jong-Heun Lim ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Dae-Lok Bae ,  Seong-Kyu Yun ,  Suk-Hun Choi

    发明人： Jong-Heun Lim ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Dae-Lok Bae ,  Seong-Kyu Yun ,  Suk-Hun Choi

    IPC分类号： H01L21/46

    CPC分类号： H01L27/0688 ,  H01L21/2007 ,  H01L21/8221

    摘要： Spaced apart bonding surfaces are formed on a first substrate. A second substrate is bonded to the bonding surfaces of the first substrate and cleaved to leave respective semiconductor regions from the second substrate on respective ones of the spaced apart bonding surfaces of the first substrate. The bonding surfaces may include surfaces of at least one insulating region on the first substrate, and at least one active device may be formed in and/or on at least one of the semiconductor regions. A device isolation region may be formed adjacent the at least one of the semiconductor regions.

    摘要翻译： 间隔开的接合表面形成在第一基底上。 第二衬底被结合到第一衬底的接合表面并且被切割以在第一衬底的相应的间隔的结合表面上的第二衬底上留下相应的半导体区域。 接合表面可以包括第一衬底上的至少一个绝缘区域的表面，并且至少一个有源器件可以形成在半导体区域中的至少一个中和/或至少一个半导体区域中。 器件隔离区域可以形成为与半导体区域中的至少一个相邻。

    METHODS OF RECYCLING A SUBSTRATE INCLUDING USING A CHEMICAL MECHANICAL POLISHING PROCESS
    3.
    发明申请
    METHODS OF RECYCLING A SUBSTRATE INCLUDING USING A CHEMICAL MECHANICAL POLISHING PROCESS 审中-公开
    回收包括使用化学机械抛光工艺的基板的方法

    公开(公告)号：US20080124930A1

    公开(公告)日：2008-05-29

    申请号：US11945359

    申请日：2007-11-27

    申请人： Jong Heun Lim ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Dae-Lok Bae ,  Seong-Kyu Yun ,  Suk-Hun Choi

    发明人： Jong Heun Lim ,  Chang-Ki Hong ,  Bo-Un Yoon ,  Dae-Lok Bae ,  Seong-Kyu Yun ,  Suk-Hun Choi

    IPC分类号： H01L21/302

    CPC分类号： H01L21/02032 ,  C09G1/02 ,  H01L21/02024 ,  H01L21/02079

    摘要： In a method of recycling a substrate having an edge portion on which a stepped portion is formed, the substrate is chemically mechanically polished using a first slurry composition including fumed silica to remove the stepped portion. The substrate is then chemically mechanically polished using a second slurry composition including colloidal silica to improve the surface roughness of the substrate. The substrate having the edge region on which the stepped portion is formed may include a donor substrate used for manufacturing a silicon-on-insulator (SOI) substrate.

    摘要翻译： 在使具有形成阶梯部分的边缘部分的基板再循环的方法中，使用包括热解法二氧化硅的第一浆料组合物对基板进行化学机械抛光以去除台阶部分。 然后使用包含胶体二氧化硅的第二浆料组合物对衬底进行化学机械抛光，以改善衬底的表面粗糙度。 具有形成台阶部分的边缘区域的基板可以包括用于制造绝缘体上硅（SOI）衬底的施主衬底。

    Methods of fabricating semiconductor devices having isolation regions formed from annealed oxygen ion implanted regions
    6.
    发明授权
    Methods of fabricating semiconductor devices having isolation regions formed from annealed oxygen ion implanted regions 失效
    制造具有由退火的氧离子注入区形成的隔离区的半导体器件的方法

    公开(公告)号：US07781302B2

    公开(公告)日：2010-08-24

    申请号：US11703316

    申请日：2007-02-07

    申请人： Yong-Won Cha ,  Dae-Lok Bae

    发明人： Yong-Won Cha ,  Dae-Lok Bae

    IPC分类号： H01L21/76

    CPC分类号： H01L21/76243

    摘要： Methods of fabricating a semiconductor device include forming a mask pattern on a semiconductor substrate and which exposes defined regions of the semiconductor substrate. Oxygen ions are implanted into the defined regions of the semiconductor substrate using the mask pattern as an ion implantation mask. The oxygen ion implanted regions of the semiconductor substrate are annealed at one or more temperatures in a range that is sufficiently high to form silicon oxide substantially throughout the oxygen ion implanted regions by reacting the implanted oxygen ions with silicon in the oxygen ion implanted regions, and that is sufficiently low to substantially prevent oxidation of the semiconductor substrate adjacent to the oxygen ion implanted regions.

    摘要翻译： 制造半导体器件的方法包括在半导体衬底上形成掩模图案，并露出半导体衬底的限定区域。 使用掩模图案将氧离子注入到半导体衬底的限定区域中作为离子注入掩模。 半导体衬底的氧离子注入区域在足够高的范围内的一个或多个温度下退火，通过使注入的氧离子与氧离子注入区域中的硅反应，基本上遍及整个氧离子注入区域形成氧化硅，以及 其足够低以基本上防止邻近氧离子注入区域的半导体衬底的氧化。

    Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process
    9.
    发明授权
    Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process 有权
    使用选择性外延生长工艺选择性地形成绝缘体上硅结构的方法

    公开(公告)号：US08735265B2

    公开(公告)日：2014-05-27

    申请号：US13082861

    申请日：2011-04-08

    申请人： Pil-Kyu Kang ,  Dae-Lok Bae ,  Gil-Heyun Choi ,  Jong-Myeong Lee

    发明人： Pil-Kyu Kang ,  Dae-Lok Bae ,  Gil-Heyun Choi ,  Jong-Myeong Lee

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02381 ,  G02B6/13 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02675

    摘要： A method of forming a silicon based optical waveguide can include forming a silicon-on-insulator structure including a non-crystalline silicon portion and a single crystalline silicon portion of an active silicon layer in the structure. The non-crystalline silicon portion can be replaced with an amorphous silicon portion and maintaining the single crystalline silicon portion and the amorphous portion can be crystallized using the single crystalline silicon portion as a seed to form a laterally grown single crystalline silicon portion including the amorphous and single crystalline silicon portions.

    摘要翻译： 形成硅基光波导的方法可以包括在该结构中形成包括非晶硅部分和活性硅层的单晶硅部分的绝缘体上硅结构。 可以用非晶硅部分替代非晶硅部分，并且使用单晶硅部分作为种子来保持单晶硅部分和非晶部分可以结晶，以形成横向生长的单晶硅部分，其包括非晶态和 单晶硅部分。